Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N06S2L05AKSA1

Name: IPP80N06S2L05AKSA1
Brand: Infineon Technologies
SKU: IPP80N06S2L05AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPP80N06S2L05AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N06S2L05AKSA1.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,154

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPP80N06S2L05AKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications, featuring 55 V V_DS, 4.5 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, 100% avalanche tested, and AEC-Q101 qualified for under-hood use in DC-DC converters and motor control stages.

For engineers reviewing the IPP80N06S2L05AKSA1 datasheet, IPP80N06S2L05AKSA1 pinout, IPP80N06S2L05AKSA1 application, or IPP80N06S2L05AKSA1 equivalent, key selection criteria include its 0.5 K/W junction-to-case thermal resistance, 300 W power dissipation at T_C = 25 °C, low gate charge (Q_g = 170–230 nC), and integrated body diode with t_rr = 65–80 ns for synchronous rectification and freewheeling.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting circuitry.

The MOSFET supports high-current pulsed operation (I_D,pulse = 320 A) and operates reliably up to 175 °C junction temperature. Its 100% unclamped inductive switching (UIS) testing ensures robustness in inductive load circuits such as solenoid drivers and H-bridge motor controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems with transient margin.
R_DS(on) max	4.5 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1.5 W conduction loss at full load in high-efficiency power stages.
I_D continuous	80 A @ T_C = 25 °C - Sustained current capability matched to TO-220 package thermal limits.
E_AS	800 mJ - Energy-handling capacity during single-pulse avalanche events, critical for inductive load protection.
Q_g	170–230 nC - Total gate charge defining drive strength requirement and switching loss trade-off.
t_rr	65–80 ns - Reverse recovery time of integrated body diode, enabling efficient synchronous rectification.
R_thJC	0.5 K/W - Junction-to-case thermal resistance enabling high-power density PCB layouts with minimal heatsink mass.

Pinout & Package

IPP80N06S2L05AKSA1 is housed in PG-TO220-3-1 package (standard through-hole TO-220AB), with drain connected to the metal tab for direct heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts logic-level input (1.2–2.0 V threshold); requires ≤230 nC charge for full turn-on.
Pin 2 (Drain)	High-side power path	Internally bonded to metal tab; electrically and thermally coupled to heatsink for low R_thJC.
Pin 3 (Source)	Reference node	Common return for gate drive and load current; defines local ground reference for driver IC placement.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock.
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with 3.3 V/5 V MCU GPIO without external level shifters.
100% UIS tested	Guarantees survivability under unclamped inductive switching stress up to 800 mJ per pulse.
Green package	Lead-free, RoHS-compliant construction with MSL1 rating for lead-free reflow up to 260 °C peak.
Optimized body diode	Low V_SD (0.9–1.3 V) and fast t_rr support bidirectional current handling in half-bridge configurations.

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: High-side load switching for headlight, fan, and pump control in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Power switch controlling current flow to resistive/inductive loads with PWM dimming and soft-start capability.

Use Value: Low R_DS(on) minimizes heat generation in confined BCM enclosures; AEC-Q101 compliance ensures 15+ year field reliability.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 90 ns) and low Q_gd to reduce shoot-through risk.

Use Value: Integrated body diode with 65–80 ns t_rr enables efficient freewheeling without external Schottky diodes.

Server PSU OR-ing Circuit

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Hot-swap and redundancy management in 48 V intermediate bus architectures using ideal diode configuration.

IC Role / Device Role / Timing Role: Forward-conducting MOSFET replacing Schottky diode to reduce forward voltage drop and conduction loss.

Use Value: R_DS(on) = 4.5 mΩ yields <0.4 V drop at 80 A, cutting conduction loss by >70% vs. 0.5 V Schottky.

Use Scenario: Switching element in boost-type power factor correction stage operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching transistor handling 80 A peak current with low Q_g/Q_gd ratio for reduced gate drive loss.

Use Value: C_iss = 5700 pF and C_rss = 360 pF enable stable operation with standard gate drivers and minimal EMI filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L05AKSA2	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging (KSA2 vs KSA1).	No functional difference; KSA2 intended for automated SMT assembly, KSA1 for manual or semi-automated insertion.	Select KSA1 for prototyping, low-volume production, or through-hole rework scenarios.
IPB80N06S2L05AKSA1	Identical electrical specs but in PG-TO263-3-2 (D²PAK) surface-mount package; R_thJC = 0.5 K/W same, but R_thJA lower on PCB with 6 cm² copper.	Better suited for high-density, automated PCB assembly where thermal via layout and board-level heatsinking are optimized.	Choose IPB80N06S2L05AKSA1 when footprint size, automated placement, or board-level thermal management is prioritized over through-hole serviceability.

Compared with IPP80N06S2L05AKSA1, the KSA2 variant offers identical performance in tape-and-reel format for pick-and-place lines, while the IPB80N06S2L05AKSA1 D²PAK version delivers equivalent electrical behavior with superior board-level thermal resistance-making it preferable for space-constrained, high-volume automotive modules.

Availability

IPP80N06S2L05AKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, and server power supply OR-ing circuits requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.

Supply support for IPP80N06S2L05AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-current, low-voltage switching in automotive and industrial power conversion systems demanding high efficiency and ruggedness.

FAQ

What is the maximum junction temperature rating for IPP80N06S2L05AKSA1?

The device is rated for continuous operation up to 175 °C junction temperature, validated across its full specification range. This rating enables deployment in under-hood automotive environments and sealed industrial enclosures without derating below 150 °C ambient, provided thermal design maintains R_thJC ≤ 0.5 K/W to heatsink.

Does IPP80N06S2L05AKSA1 require a gate resistor for safe switching?

Yes-a gate resistor (typically 10–47 Ω) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The 230 nC total gate charge and 90 ns fall time indicate moderate drive strength needs; undersized gate resistance risks shoot-through in bridge configurations and excessive EMI due to rapid edge rates.

Can IPP80N06S2L05AKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) enables inherent current sharing when paralleled. Successful implementation requires matched layout symmetry, identical gate drive paths, and shared source inductance minimization; typical designs use 2–4 devices with individual 10 Ω gate resistors and Kelvin source connections.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the body diode is characterized with t_rr = 65–80 ns and Q_rr = 125–160 nC at T_j = 25 °C, making it viable for freewheeling in 65–100 kHz hard-switched converters. However, for >200 kHz operation or zero-voltage switching (ZVS), a dedicated SiC Schottky diode is recommended to minimize recovery loss and EMI.

IPP80N06S2L05AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N06S2L05AKSA1 FAQ

1.How can I place an order for IPP80N06S2L05AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S2L05AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2L05AKSA1 reliable?

The price and inventory of IPP80N06S2L05AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2L05AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP80N06S2L05AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S2L05AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N06S2L05AKSA1?

IPP80N06S2L05AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S2L05AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S2L05AKSA1?

For technical support, including IPP80N06S2L05AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2L05AKSA1 requirements.

6.How does Aetrix verify that IPP80N06S2L05AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2L05AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2L05AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2L05AKSA1?

All IPP80N06S2L05AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2L05AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2L05AKSA1 part is unused and in its original packaging.

Return procedure for IPP80N06S2L05AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.