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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N06S2L11AKSA2

Name: IPP80N06S2L11AKSA2
Brand: Infineon Technologies
SKU: IPP80N06S2L11AKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N06S2L11AKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N06S2L11AKSA2.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

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Product details

Overview

IPP80N06S2L11AKSA2 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low R_DS(on) of 8.7 mΩ (typ.) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPP80N06S2L11AKSA2 datasheet, IPP80N06S2L11AKSA2 pinout, IPP80N06S2L11AKSA2 application, or IPP80N06S2L11AKSA2 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, thermal resistance R_thJC = 0.95 K/W, avalanche energy E_AS = 280 mJ, diode forward voltage V_SD ≤ 1.3 V, and gate charge Q_g = 62–80 nC.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while its 100% unclamped inductive switching (UIS) rating ensures robustness under transient overloads.

The MOSFET integrates a fast-recovery body diode with t_rr = 54–67 ns and Q_rr = 61–76 nC, minimizing commutation loss in synchronous rectification and half-bridge topologies. Thermal design is supported by a low junction-to-case resistance (0.95 K/W) and MSL1 reflow compatibility up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 12 V/24 V battery rail applications with margin against load dump transients
R_DS(on) max @ V_GS = 10 V	11.0 mΩ - ensures ≤ 70 W conduction loss at 80 A, critical for thermally constrained engine bay modules
R_DS(on) max @ V_GS = 4.5 V	14.7 mΩ - guarantees turn-on capability with standard 3.3 V/5 V MCU GPIOs in space-constrained control units
E_AS	280 mJ - validated single-pulse avalanche energy enabling reliable operation during short-circuit events in motor drives
Q_g	62–80 nC - determines gate driver power requirement and switching speed trade-off in 20–100 kHz PWM stages
t_r/t_f	32 ns / 13 ns - supports fast switching with reduced overlap loss, essential for high-efficiency buck converters
V_SD @ I_F = 80 A	1.0–1.3 V - low body diode forward drop improves efficiency in freewheeling and bidirectional power flow
R_thJC	0.95 K/W - enables direct heatsink mounting with predictable thermal path for 158 W P_tot dissipation at T_C = 25 °C

Pinout & Package

IPP80N06S2L11AKSA2 is housed in a PG-TO220-3-1 package with isolated tab (drain-connected), featuring through-hole mounting and vertical heat dissipation. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Common return path for load current; connects to ground plane or low-side shunt resistor
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and layout-induced ringing
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless system ground referenced

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JESD22 standards
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs - eliminates need for gate driver ICs in cost-sensitive ECUs
Ultra-low R_DS(on)	8.7 mΩ typ. @ 10 V reduces I²R loss by >30% vs. legacy 12 V MOSFETs, extending battery runtime in start-stop systems
100% UIS tested	Each unit passes single-pulse avalanche stress test at 80 A - guarantees ruggedness in motor stall and inductive load switching
Green package	Lead-free, RoHS-compliant PG-TO220-3-1 housing with MSL1 rating supports lead-free reflow assembly without delamination risk

Applications

Automotive DC-DC Converter

Engine Control Unit (ECU) Power Stage

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for MCU and sensor rails in modern gasoline/diesel powertrains.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200–500 kHz PWM frequency with tight duty-cycle control.

Use Value: Low R_DS(on) and fast t_f reduce conduction and switching losses, achieving >95% efficiency at 30 A output.

Use Scenario: Driving solenoid valves, fuel injectors, and ignition coils via half-bridge or high-side configurations.

IC Role / Device Role / Timing Role: Robust high-current switch with integrated avalanche capability to absorb inductive kickback without external snubbers.

Use Value: 280 mJ E_AS and 175 °C T_j rating ensure reliability during repeated coil de-energization in harsh under-hood environments.

Electric Power Steering (EPS) Motor Driver

12 V Battery Backup Switch

Use Scenario: Inverter leg in three-phase BLDC motor driver for torque-assist steering systems.

IC Role / Device Role / Timing Role: Low-side switch in 6-phase H-bridge topology, conducting up to 80 A peak with <1 µs dead-time tolerance.

Use Value: 14.7 mΩ R_DS(on) @ 4.5 V ensures full turn-on using EPS MCU's 5 V IO, reducing gate driver BOM count.

Use Scenario: OR-ing diode replacement in dual-battery (main + backup) architectures for commercial vehicles.

IC Role / Device Role / Timing Role: Bidirectional power path controller managing seamless switchover during main battery failure.

Use Value: Body diode V_SD ≤ 1.3 V and t_rr ≤ 67 ns minimize reverse recovery loss and voltage overshoot during transition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N06S2L11AKSA2	PG-TO263-3-2 package; identical die, lower R_thJA on PCB (40 K/W with 6 cm² copper)	Better suited for SMT-based automotive modules where board space and thermal pad area are constrained	Select when automated assembly and improved PCB thermal performance outweigh through-hole mounting requirements
IPI80N06S2L11AKSA2	PG-TO262-3-1 package; same die, identical R_DS(on) and E_AS, but higher mounting torque tolerance	Preferred for high-vibration environments (e.g., off-road vehicle ECUs) due to reinforced leadframe and mechanical stability	Select when mechanical robustness and field-replaceability via screw terminals are prioritized over thermal metrics

Compared with IPB80N06S2L11AKSA2 and IPI80N06S2L11AKSA2, IPP80N06S2L11AKSA2 offers optimal balance of thermal performance, gate drive simplicity, and through-hole serviceability - making it the default choice for production-grade automotive power stages where manual rework and heatsink integration are required.

Availability

IPP80N06S2L11AKSA2 is available at Aetrix Electronics and suitable for automotive power conversion, engine control, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPP80N06S2L11AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power transistor family, engineered specifically for high-current, high-temperature automotive power switching - emphasizing avalanche ruggedness, logic-level drive, and AEC-Q101 compliance.

FAQ

Is IPP80N06S2L11AKSA2 pin-compatible with other OptiMOS® 80 A / 55 V variants?

Yes - IPP80N06S2L11AKSA2 shares identical pinout (source-gate-drain) and mechanical footprint with IPB80N06S2L11AKSA2 and IPI80N06S2L11AKSA2. All three use TO-220-3, TO-263-3, and TO-262-3 packages respectively, with consistent terminal assignment and isolation scheme.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±20 V, qualified per JEDEC JESD22-A114. During fast-switching events, gate ringing must be clamped below this limit using RC snubbers or active gate control; exceeding ±20 V risks irreversible oxide damage even if duration is sub-microsecond.

Does the body diode support synchronous rectification in buck converters?

Yes - the integrated body diode has t_rr = 54–67 ns and Q_rr = 61–76 nC, enabling efficient synchronous rectification at ≤300 kHz. However, for >400 kHz operation, external Schottky diodes are recommended to avoid reverse recovery losses.

Can IPP80N06S2L11AKSA2 be used in non-automotive industrial applications?

Yes - while AEC-Q101 qualified, its 175 °C T_j, 280 mJ E_AS, and green packaging meet industrial requirements per IEC 60747-9. It is widely deployed in UPS inverters, solar charge controllers, and industrial motor starters where high reliability and thermal margin are critical.

IPP80N06S2L11AKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10.7mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2075 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N06S2L11AKSA2 FAQ

1.How can I place an order for IPP80N06S2L11AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N06S2L11AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N06S2L11AKSA2 reliable?

The price and inventory of IPP80N06S2L11AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N06S2L11AKSA2 is usually 5 days.

3.What payment methods are accepted for IPP80N06S2L11AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N06S2L11AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N06S2L11AKSA2?

IPP80N06S2L11AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N06S2L11AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N06S2L11AKSA2?

For technical support, including IPP80N06S2L11AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N06S2L11AKSA2 requirements.

6.How does Aetrix verify that IPP80N06S2L11AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP80N06S2L11AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N06S2L11AKSA2 meets industry standards.

7.What is the process for return or replacement of IPP80N06S2L11AKSA2?

All IPP80N06S2L11AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N06S2L11AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N06S2L11AKSA2 part is unused and in its original packaging.

Return procedure for IPP80N06S2L11AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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