Infineon Technologies IPP90R340C3XKSA2

Overview

IPP90R340C3XKSA2 from Infineon Technologies is a 900 V, 0.34 Ω (max) CoolMOS™ C3 superjunction power MOSFET in PG-TO220 package, optimized for high-efficiency quasi-resonant flyback and forward SMPS topologies in PC silverbox and industrial power supplies. It delivers 9.2 A continuous drain current at T_C = 25 °C, 94 nC total gate charge, and extreme dv/dt ruggedness up to 50 V/ns.

For engineers reviewing the IPP90R340C3XKSA2 datasheet, IPP90R340C3XKSA2 pinout, IPP90R340C3XKSA2 application, or IPP90R340C3XKSA2 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (678 mJ), diode reverse recovery performance (Q_rr = 11 µC), and thermal resistance (R_thJC = 0.6 K/W).

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, featuring optimized charge balancing for ultra-low R_DS(on) × Q_g figure-of-merit. Its internal structure enables stable operation under high dv/dt stress (50 V/ns) and supports repetitive avalanche with E_AR and I_AR rated at 50 V, 3.1 A.

The integrated body diode exhibits 0.8–1.2 V forward voltage at 9.2 A and 25 °C, with t_rr = 510 ns and peak recovery current I_rrm = 41 A under defined dI/dt conditions. Dynamic parameters-including C_iss = 2400 pF, C_oss = 120 pF, and Q_gd = 41 nC-are characterized at V_DD = 400 V and R_G = 23.1 Ω.

Key Specifications

Pinout & Package

Package: PG-TO220 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP90R340C7XKSA2 and STP9NK90ZFP, the IPP90R340C3XKSA2 offers the best balance of proven ruggedness, mature design support, and cost-effective performance for mainstream 65–100 kHz QR flyback implementations.

Availability

IPP90R340C3XKSA2 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer audio amplifier PSUs, and high-bay LED drivers requiring stable component supply and long-term lifecycle continuity.

Supply support for IPP90R340C3XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline AC/DC conversion in consumer and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP90R340C3XKSA2 supports 9.2 A continuous drain current at T_C = 25 °C, derating linearly to approximately 5.8 A at T_C = 100 °C based on its safe operating area curve and thermal resistance of 0.6 K/W. This value assumes adequate heatsinking and PCB copper area per Infineon's layout guidelines.

Is the drain tab electrically isolated from the package body?

Yes-the PG-TO220 package uses an isolated tab construction. The drain (Pin 2) connects directly to the metal tab, but the tab is electrically isolated from the mounting surface via internal molding compound. Insulated mounting hardware is still required when the heatsink is grounded or at a different potential.

Does this MOSFET require a negative gate turn-off voltage?

No-this device operates reliably with 0 V to +10 V gate drive. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (~4.6 V) are designed for standard CMOS-compatible drivers. Negative turn-off is not required nor recommended, as V_GS ratings are limited to ±20 V.

How does its reverse diode performance compare to standard silicon diodes?

The integrated body diode has V_SD = 0.8–1.2 V at 9.2 A and t_rr = 510 ns, which is significantly faster and lower-loss than general-purpose rectifiers-but slower and higher-V_F than dedicated SiC Schottky diodes. It is intended for synchronous or self-driven freewheeling, not as a primary rectifier.