Infineon Technologies IPP90R800C3XKSA2

Overview

IPP90R800C3XKSA2 from Infineon Technologies is a 900 V, 0.8 Ω (max) CoolMOS™ C3 superjunction power MOSFET in PG-TO220 package, optimized for quasi-resonant flyback and forward SMPS topologies. It delivers 4.1 A continuous drain current at T_C = 25 °C, 42 nC total gate charge, and extreme dv/dt ruggedness (400 V/ns), enabling high-efficiency, compact AC/DC adapters and industrial switch-mode power supplies.

For engineers reviewing the IPP90R800C3XKSA2 datasheet, IPP90R800C3XKSA2 pinout, IPP90R800C3XKSA2 application, or IPP90R800C3XKSA2 equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (157 mJ single-pulse), gate charge profile, and TO-220 thermal resistance (R_thJC = 1.2 K/W) for thermal design validation.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology with optimized charge balance for low R_DS(on) × Q_g figure-of-merit (0.8 Ω × 42 nC). Its 900 V breakdown voltage and 150 °C max junction temperature support universal-input offline converters operating up to 400 V DC link.

The integrated body diode features 360 ns reverse recovery time and 5.3 µC Q_rr, enabling hard-switched operation with controlled commutation loss. dv/dt ruggedness is validated to 400 V/ns under specified test conditions (V_R = 400 V, dI_F/dt = 100 A/µs), critical for noise-immune operation in high-density SMPS.

Key Specifications

Pinout & Package

Package: PG-TO220 (3-pin, through-hole, isolated tab). Mounting torque: 60 N·cm ±30 for M3/M3.5 screws. Tab is drain-connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP90R1K2C3XKSA2 and IPW90R1K2C3FKSA1, the IPP90R800C3XKSA2 offers optimal balance of conduction efficiency and gate drive simplicity in mid-power TO-220-based designs, especially where board area and cost are tightly constrained.

Availability

IPP90R800C3XKSA2 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial SMPS, PC silverbox power supplies, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for IPP90R800C3XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability offline power conversion, with emphasis on reducing R_DS(on) × Q_g and enhancing ruggedness for QR flyback, forward, and LLC topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPP90R800C3XKSA2 supports 4.4 A continuous drain current at T_C = 100 °C, as specified in its maximum ratings table. This value reflects thermal derating due to increased R_DS(on) and reduced safe operating area at elevated temperatures, and must be verified against actual PCB layout and heatsink performance.

Is the drain tab electrically isolated from the package mount surface?

No - the metal tab is internally connected to the drain terminal. When mounting to a heatsink, an electrically insulating thermal pad or mica washer must be used unless the heatsink is floating or referenced to high-side potential. The isolation voltage rating is not specified; system-level creepage/clearance must comply with safety standards.

Does this MOSFET require a negative gate turn-off voltage?

No - the IPP90R800C3XKSA2 operates with 0 V to +10 V gate drive. Its gate threshold voltage is 2.5–3.5 V, and it achieves full enhancement at V_GS = 10 V. Negative gate bias is unnecessary and not recommended, as the device lacks enhanced negative V_GS rating beyond –20 V.

How does the body diode's reverse recovery performance compare to standard silicon diodes?

The integrated body diode has t_rr = 360 ns and Q_rr = 5.3 µC at I_F = 4.1 A, significantly faster than conventional FRD-based synchronous rectifiers but slower than SiC Schottky diodes. It enables acceptable hard-switching loss in forward converters but is not recommended for high-frequency synchronous rectification.