Infineon Technologies IPQC60R017S7XTMA1

Overview

IPQC60R017S7XTMA1 from Infineon is a 600V, 17 mΩ silicon carbide–free superjunction MOSFET in PG-HDSOP-22 package with Kelvin Source configuration, optimized for static switching and high-current line rectification in SMPS, UPS, solar inverters, and solid-state relays. It delivers 491 A pulsed drain current, 196 nC total gate charge, and 0.82 V body diode forward voltage at 29 A.

For engineers reviewing the IPQC60R017S7XTMA1 datasheet, IPQC60R017S7XTMA1 pinout, IPQC60R017S7XTMA1 application, or IPQC60R017S7XTMA1 equivalent, this device is selected for low-frequency, high-efficiency power conversion where conduction loss minimization, thermal robustness, and paralleling capability are critical design requirements.

Technical Context

This CoolMOS™ S7 device uses charge-compensation superjunction architecture to achieve ultra-low R_DS(on) (17 mΩ max) while maintaining 600 V blocking capability and high dv/dt ruggedness (20 V/ns). Its Kelvin Source pin (Pin 2) separates driver return path from power source, enabling precise gate control under high di/dt conditions.

The PG-HDSOP-22 package integrates a thermally exposed tab (Pins 12–22 + Tab) for bottom-side cooling and supports MSL1 reflow compatibility. Internal body diode characteristics-510 ns reverse recovery time, 11.5 µC Q_rr, and 45 A I_rrm-are specified for hard-commutated topologies requiring controlled freewheeling behavior.

Key Specifications

Pinout & Package

PG-HDSOP-22 is a surface-mount, bottom-cooled package with exposed thermal tab (Pins 12–22 + metal tab) and 22-pin layout. Pin 1 is Gate, Pin 2 is Driver Source (Kelvin), Pins 3–11 are Power Source, and Pins 12–22 plus tab form the Drain connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R017C7FKSA1 and STW62N60M2, IPQC60R017S7XTMA1 provides superior thermal performance via bottom-side cooling, precise gate control via Kelvin Source, and higher surge current capability-making it optimal for compact, high-reliability, paralleled power stages.

Availability

IPQC60R017S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay design, telecom power supply rectification, and solar inverter DC switching requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPQC60R017S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This device belongs to the CoolMOS™ S7 superjunction MOSFET product line, engineered specifically for static switching, high-current rectification, and low-frequency (<100 kHz) power conversion where R_DS(on) dominance over switching loss defines system efficiency.

FAQ

Can IPQC60R017S7XTMA1 be paralleled with identical units?

Yes, but gate resistors must be placed on the Driver Source (Pin 2), not the Gate (Pin 1), to avoid oscillation and uneven current sharing. Layout symmetry, matched trace inductance, and individual gate drive paths are mandatory. The Kelvin Source architecture enables stable paralleling up to four devices in high-current SSR or breaker modules.

What is the maximum allowable gate voltage during transient events?

The absolute maximum dynamic gate-source voltage is ±30 V. Exceeding this-even briefly-risks oxide breakdown. A clamping TVS (e.g., SMAJ15A) between Gate and Driver Source is recommended for systems subject to ESD or inductive kickback, especially in motor drive or relay coil drive environments.

Is the internal body diode suitable for synchronous rectification?

No. With 510 ns t_rr and 11.5 µC Q_rr, the body diode is optimized for line-frequency commutation-not high-frequency synchronous rectification. It is intended for freewheeling in low-speed topologies like SSRs or UPS inverters, not for MHz-range buck converters.

How does the PG-HDSOP-22 package affect PCB layout thermal design?

The exposed drain tab (Pins 12–22 + metal pad) must be soldered to ≥6 cm² of 70 µm thick copper on an FR4 PCB, with vertical orientation and no forced airflow, to achieve the rated 0.25 °C/W R_thJC. Thermal vias under the tab are required; insufficient copper area increases junction temperature by >20°C at full load.