Infineon Technologies IPQC60T022S7XTMA1

Overview

IPQC60T022S7XTMA1 from Infineon is a 600 V, 22 mΩ CoolMOS™ S7T superjunction MOSFET with integrated temperature sensor (TS), housed in PG-HDSOP-22 package. It delivers 90 A continuous drain current at T_C = 25°C, supports 371 A pulsed current, and features an internal body diode with 0.82 V forward voltage. Designed for static switching and high-current industrial power conversion, it enables solid-state relays and high-power line rectification in UPS and solar inverters.

For engineers reviewing the IPQC60T022S7XTMA1 datasheet, IPQC60T022S7XTMA1 pinout, IPQC60T022S7XTMA1 application, or IPQC60T022S7XTMA1 equivalent, key selection criteria include R_DS(on) ≤ 22 mΩ at 12 V_GS, embedded junction temperature sensing accuracy (±0.5 K typical), 20 V/ns dv/dt ruggedness, and PG-HDSOP-22 thermal performance (R_thJC = 0.3 °C/W).

Technical Context

This device implements a silicon-based superjunction structure with charge compensation for low conduction loss and high blocking capability. Its integrated temperature sensor uses a calibrated forward-biased p-n junction (Pin 3) with ±5.96 mV/K TC and 1.6–2.1 V output range across 25–175°C, enabling real-time thermal protection without external sensors.

The PG-HDSOP-22 package integrates a thermally exposed tab (Pins 12–22) for direct heatsink mounting and separates driver source (Pin 4) from power source (Pins 5–11) to minimize source inductance during high-di/dt switching. Gate drive requires strict adherence to non-interchangeable source pin roles per JEDEC qualification.

Key Specifications

Pinout & Package

PG-HDSOP-22 is a surface-mount, thermally enhanced package with exposed copper tab (Pins 12–22) for low-thermal-resistance heatsink interface. The 22-pin layout separates high-current power paths from sensitive signal pins to suppress noise coupling and enable accurate temperature sensing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current switching applications.

Compared with IPW60R024P7XKSA1 and IPP60R022C7XKSA1, IPQC60T022S7XTMA1 uniquely combines 22 mΩ conduction, embedded temperature sensing, and 20 V/ns dv/dt ruggedness in a surface-mount package-enabling compact, self-monitoring designs for safety-critical industrial switching where thermal awareness directly impacts system lifetime.

Availability

IPQC60T022S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relays, high-power line rectification, and energy storage system disconnects requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEMs.

Supply support for IPQC60T022S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the CoolMOS™ S7T product line, engineered specifically for high-current, low-frequency industrial switching applications where thermal intelligence and conduction efficiency are prioritized over ultra-high-speed switching.

FAQ

What is the function of Pin 3 (TS) and how is it used in circuit design?

Pin 3 is the anode of an integrated forward-biased p-n junction temperature sensor. It outputs a voltage linearly proportional to junction temperature (1.6–2.1 V over 25–175°C) with a temperature coefficient of 5.96 mV/K. Designers connect it to an ADC input with a precision current source (e.g., 10–500 µA) to derive real-time T_j; no calibration is required beyond initial offset trimming.

Why must Driver Source (Pin 4) and Power Source (Pins 5–11) not be interchanged?

Driver Source provides a low-inductance return path exclusively for the gate driver loop, minimizing gate oscillation and ensuring accurate threshold control. Power Source carries high di/dt currents that would induce noise into the gate loop if shared. Interchanging them causes unstable switching, increased EMI, and potential thermal runaway due to inaccurate gate voltage referencing.

Can IPQC60T022S7XTMA1 replace standard 600 V MOSFETs in existing designs without layout changes?

No-its PG-HDSOP-22 footprint and pin assignment differ significantly from TO-220 or D²PAK packages. The separate Driver Source (Pin 4) and dual-source routing require dedicated PCB layout with isolated copper pours. Thermal pad alignment and gate resistor placement (recommended on Driver Source) must be verified per Infineon's layout guidelines in AN2022-05.

What is the maximum allowable pulsed drain current and under what conditions is it valid?

The pulsed drain current is 371 A, specified at T_C = 25°C with pulse width limited by junction temperature rise to T_j,max = 150°C. This rating applies only for single pulses ≤10 µs and requires strict thermal management-continuous operation above 90 A must be derated per the P_tot vs. T_C curve (Diagram 1) and safe operating area (Diagram 2).