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Infineon Technologies IPQC65R125CFD7AXTMA1

Part No.:
IPQC65R125CFD7AXTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
22-PowerBSOP Module
Datasheet:
AetrixIPQC65R125CFD7AXTMA1.pdf
Description:
AUTOMOTIVE_COOLMOS
Quantity:
Payment:
Payment
Shipping:
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Inventory:200

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Product details

Overview

IPQC65R125CFD7AXTMA1 from Infineon is a 650 V, 125 mΩ automotive-qualified Superjunction MOSFET in PG-HDSOP-22 package with Kelvin source configuration, integrated fast body diode (diF/dt = 1300 A/µs), and AEC-Q101 qualification. It delivers ultra-low Qrr (0.52 µC), low RDS(on)×Qg and RDS(on)×Eoss, and is optimized for ZVS phase-shift full-bridge and LLC resonant DC-DC converters in on-board chargers.

For engineers reviewing the IPQC65R125CFD7AXTMA1 datasheet, IPQC65R125CFD7AXTMA1 pinout, IPQC65R125CFD7AXTMA1 application, or IPQC65R125CFD7AXTMA1 equivalent, key selection criteria include its Kelvin-source-controlled switching behavior, 100% avalanche-tested ruggedness, 66 A pulsed drain current, and validated performance at 150 °C junction temperature in high-reliability automotive power stages.

Technical Context

This CoolMOS™ CFD7A device implements a charge-compensated superjunction structure with an integrated fast-recovery body diode and dedicated Kelvin source terminal (Pin 2) for precise gate drive control. Its dv/dt ruggedness (120 V/ns) and reverse diode commutation speed (1300 A/µs) enable stable operation in hard-switched and resonant topologies without external snubbers.

The PG-HDSOP-22 package features a thermally enhanced exposed drain tab (Pins 12–22 + Tab) and separate driver source (Pin 2) and power source (Pins 3–11) terminals to minimize source inductance and suppress oscillation during high-di/dt switching. Gate resistance is specified at 6 Ω (f = 250 kHz, open drain).

Key Specifications

ParameterValue and Actual Design Meaning
VDS650 V - Rated blocking voltage for 400 V bus applications with margin against transients and line surges
RDS(on),max125 mΩ @ Tj = 150 °C - Ensures low conduction loss in high-temp automotive environments
Qg,typ32 nC @ VGS = 0–10 V - Enables efficient gate driving with moderate driver IC output capability
Eoss @ 400 V5.0 µJ - Reduces turn-off energy loss and supports higher-frequency soft-switching operation
diF/dt1300 A/µs - Supports fast, controlled body diode commutation in LLC and phase-shifted full-bridge circuits
ID,pulse66 A - Sustains peak load currents in bidirectional DC-DC converter burst-mode operation
Tj,max150 °C - Validated for continuous operation in under-hood automotive thermal environments

Pinout & Package

PG-HDSOP-22 is a surface-mount, thermally enhanced package with an exposed drain tab (Pins 12–22 + metal tab) and dual-source configuration: Driver Source (Pin 2) for gate loop integrity and Power Source (Pins 3–11) for main current return.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateMain gate input; requires low-inductance routing to minimize ringing during fast switching
Pin 2Driver Source (Kelvin)Reference for gate driver IC feedback; must not be connected to power source or ground plane
Pins 3–11Power SourceMain source return path for high-current conduction; routed separately from Driver Source
Pins 12–22 + TabDrainExposed copper drain pad; soldered directly to PCB thermal pad for <0.78 °C/W RthJC

Key Features

FeatureDesign Value
Integrated fast body diodediF/dt = 1300 A/µs and trr = 105 ns - Eliminates need for external anti-parallel SiC/Si diode in resonant PFC and DC-DC stages
Kelvin source configurationDedicated Pin 2 for gate driver reference - Enables accurate VGS control and suppresses false turn-on during high-di/dt transitions
AEC-Q101 qualifiedValidated for automotive-grade reliability including 100% single-pulse avalanche testing (EAS = 78 mJ) - Meets functional safety requirements for OBC and traction inverters
Low RDS(on) × Qg FOM125 mΩ × 32 nC = 4.0 nC·Ω - Balances conduction and switching losses for >100 kHz operation in compact OBC designs

Applications

On-Board Charger (OBC) – AC/DC StageOn-Board Charger (OBC) – Isolated DC/DC Stage

Use Scenario: High-efficiency 11 kW bi-directional OBC converting grid AC to 400 V/800 V battery with active PFC and isolated LLC stage.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in interleaved boost PFC and resonant LLC transformer primary side.

Use Value: Integrated fast body diode enables zero-voltage switching across full load range; Kelvin source ensures stable gate control despite 1300 A/µs diode commutation.

Use Scenario: 800 V battery-fed bidirectional DC-DC converter interfacing with 48 V auxiliary system in hybrid electric vehicles.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology operating at 200–500 kHz with ZVS.

Use Value: 650 V rating with 125 mΩ RDS(on) and 5.0 µJ Eoss minimizes conduction and turn-off losses while maintaining robust dv/dt immunity (120 V/ns).

Bidirectional DC-DC Converter – Traction Inverter Auxiliary SupplyIndustrial Server PSU – High-Density PFC

Use Scenario: 3.3 kW isolated bidirectional converter supplying 12 V/48 V auxiliary power from main traction battery in BEV platforms.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and primary-side switch in dual-active-bridge (DAB) topology.

Use Value: AEC-Q101 qualification and 150 °C Tj,max ensure long-term reliability in sealed, convection-limited under-hood enclosures.

Use Scenario: 3 kW telecom/server front-end PFC using interleaved totem-pole topology with 650 V switches.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) totem-pole PFC with active clamp.

Use Value: Ultra-low Qrr (0.52 µC) and fast diode recovery reduce body diode conduction loss and EMI generation during light-load operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW65R125CFD7XKSA1TO-247-4 package; identical die, no Kelvin source; RDS(on) = 125 mΩ, Qg = 32 nCLacks dedicated driver source pin; higher source inductance limits high-frequency ZVS performancePreferred for cost-sensitive industrial PFC where layout-induced ringing is manageable
STW65N65FD2650 V, 120 mΩ, Qg = 42 nC, no Kelvin source, no AEC-Q101Higher Qg increases gate drive loss; unqualified for automotive useSuitable for non-automotive server PSUs requiring lower RDS(on) but tolerating higher switching loss

Compared with IPW65R125CFD7XKSA1 and STW65N65FD2, IPQC65R125CFD7AXTMA1 uniquely combines AEC-Q101 qualification, Kelvin source control, and ultra-low Qrr-making it the only choice for production automotive OBCs demanding ZVS stability, EMI compliance, and functional safety traceability.

Availability

IPQC65R125CFD7AXTMA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive-grade PFC stages requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant traceability.

Supply support for IPQC65R125CFD7AXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in automotive and industrial power systems.

The CoolMOS™ CFD7A product line targets high-reliability automotive power conversion, specifically engineered for zero-voltage switching topologies in on-board chargers and traction auxiliary supplies where diode commutation speed and avalanche ruggedness are critical.

FAQ

What is the purpose of the separate Driver Source (Pin 2) and Power Source (Pins 3–11)?

Pin 2 provides a Kelvin connection for the gate driver's source reference, isolating gate loop impedance from high-current source return paths. Pins 3–11 carry bulk source current to minimize voltage spikes during switching. Mixing these connections causes gate overdrive and potential device failure due to elevated VGS during high-di/dt events.

Can IPQC65R125CFD7AXTMA1 be used in linear mode operation?

No. Infineon explicitly advises against linear mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'" due to unvalidated safe operating area and thermal runaway risk. Linear applications require dedicated devices with SOA characterization and derating guidance.

Is the PG-HDSOP-22 package lead-free and RoHS compliant?

Yes. The PG-HDSOP-22 package meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 specifications, with reflow peak temperature rated at 260 °C. Full compliance documentation-including substance declarations and test reports-is available via Infineon's official product portal.

How does the integrated fast body diode differ from standard CoolMOS™ body diodes?

This CFD7A generation features a modified drift region and optimized doping profile that reduces reverse recovery charge (Qrr = 0.52 µC) and increases diode commutation speed (diF/dt = 1300 A/µs). Unlike earlier CoolMOS™ variants, it achieves near-SiC-like diode performance without external diodes, enabling reliable ZVS in LLC and phase-shifted topologies up to 500 kHz.

IPQC65R125CFD7AXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
22-PowerBSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1566 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
160W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-22-1

IPQC65R125CFD7AXTMA1 FAQ

1.How can I place an order for IPQC65R125CFD7AXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPQC65R125CFD7AXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPQC65R125CFD7AXTMA1 reliable?

The price and inventory of IPQC65R125CFD7AXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPQC65R125CFD7AXTMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPQC65R125CFD7AXTMA1 transactions.

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IPQC65R125CFD7AXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPQC65R125CFD7AXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPQC65R125CFD7AXTMA1?

For technical support, including IPQC65R125CFD7AXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPQC65R125CFD7AXTMA1 requirements.

6.How does Aetrix verify that IPQC65R125CFD7AXTMA1 is sourced from the original manufacturer or authorized distributors?

All IPQC65R125CFD7AXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPQC65R125CFD7AXTMA1 meets industry standards.

7.What is the process for return or replacement of IPQC65R125CFD7AXTMA1?

All IPQC65R125CFD7AXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPQC65R125CFD7AXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPQC65R125CFD7AXTMA1 part is unused and in its original packaging.

Return procedure for IPQC65R125CFD7AXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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