Infineon Technologies IPS031N03LGAKMA1

Overview

IPS031N03LGAKMA1 from Infineon Technologies is a 30 V, 31 mΩ, 100 A continuous drain current N-channel enhancement-mode power MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, featuring low gate charge (19 nC), fast switching (turn-on delay 2.2 ns), and optimized for high-efficiency synchronous buck converters in server VRMs.

For engineers reviewing the IPS031N03LGAKMA1 datasheet, IPS031N03LGAKMA1 pinout, IPS031N03LGAKMA1 application, or IPS031N03LGAKMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, pulsed drain current rating, thermal resistance (R_thJC = 0.9 K/W), and gate threshold voltage consistency across temperature.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to minimize conduction and switching losses simultaneously. It supports 100 A continuous operation at T_C = 25 °C with 3.3 × 3.3 mm footprint and exposed drain pad for direct PCB thermal coupling.

The device features a gate threshold voltage (V_GS(th)) of 1.7 V typical at 25 °C, with tight distribution (1.4–2.0 V), enabling reliable logic-level drive from 3.3 V or 5 V controllers. Its Q_g of 19 nC and Q_gd/Q_g ratio of 17% support high-frequency PWM operation up to 1 MHz in multiphase VRMs.

Key Specifications

Pinout & Package

IPS031N03LGAKMA1 is housed in PG-TDSON-8 (3.3 × 3.3 mm, 0.9 mm height), with thermally enhanced exposed drain pad on bottom side. Pin 1–5 are source terminals; Pin 6–8 are drain terminals; Gate is on Pin 7 only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage MOSFET applications.

Compared with STL220N3LLH6 and NTMFS4C02NT1G, IPS031N03LGAKMA1 delivers optimal balance of logic-level drive compatibility, thermal performance, and switching speed - making it the preferred choice for next-gen server and AI power delivery where board area and efficiency are co-constrained.

Availability

IPS031N03LGAKMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power stages, telecom rectifier modules, and industrial PLC power supplies requiring stable component supply and full traceability.

Supply support for IPS031N03LGAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to AEC-Q100 and JEDEC standards.

This device belongs to the OptiMOS™ 5 family, engineered specifically for high-density, high-efficiency DC-DC conversion in datacenter and AI hardware - emphasizing low R_DS(on), fast switching, and thermal scalability.

FAQ

What is the maximum allowable pulsed drain current for IPS031N03LGAKMA1?

The datasheet specifies I_DM = 400 A for single-pulse operation at T_C = 25 °C with pulse width ≤ 10 μs and duty cycle ≤ 1%. This rating assumes ideal thermal conditions and is validated using JEDEC JESD24-1 test methods. For sustained 100 A operation, derating to 85 A is required at T_C = 100 °C per the SOA curve.

Does IPS031N03LGAKMA1 support paralleling without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.5%/°C) ensures inherent current balancing when multiple devices are paralleled. Layout symmetry (matched trace length, thermal mass, and gate routing) is required; no external ballast resistors are needed per Infineon application note AN2019-05.

What is the recommended PCB layout for thermal management?

Use ≥4 internal copper layers with 2 oz (70 μm) thickness under the exposed drain pad. Connect all 6 drain terminals (Pins 1–5 + exposed pad) to a solid 12 mm² thermal pad tied to inner ground/power planes via ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch). Keep gate traces short (<5 mm) and shielded from drain switching nodes.

Is IPS031N03LGAKMA1 qualified for automotive applications?

No - it is not AEC-Q101 qualified. While it meets industrial temperature range (−55 °C to +175 °C), its qualification scope covers server, telecom, and industrial power supplies only. For automotive-grade equivalents, consider Infineon's OptiMOS™ 6 30 V series (e.g., IPB031N03LG), which carries full AEC-Q101 certification.