Infineon Technologies IPS050N03LG

Overview

IPS050N03LG from Infineon Technologies is a 30 V, 50 A N-channel logic-level OptiMOS®3 power MOSFET in PG-TO251-3-11 package, optimized for high-efficiency DC/DC converters and SMPS primary-side switching. It features 4.2 mΩ max R_DS(on) at V_GS = 10 V, 7.3 mΩ max at 4.5 V, 15–20 nC total gate charge, avalanche-rated operation, and JEDEC-qualified reliability for industrial power applications.

For engineers reviewing the IPS050N03LG datasheet, IPS050N03LG pinout, IPS050N03LG application, or IPS050N03LG equivalent, key selection criteria include logic-level drive compatibility (V_GS(th) = 1–2.2 V), low gate charge × R_DS(on) figure-of-merit, thermal resistance (R_thJC = 2.2 K/W), and synchronous FET suitability (Q_g(sync) = 13–17 nC).

Technical Context

This device implements a trench-based silicon MOSFET architecture with optimized cell pitch and gate oxide design to simultaneously minimize conduction loss and switching loss. Its 30 V V_(BR)DSS, 50 A continuous drain rating at T_C = 100 °C, and 60 mJ single-pulse avalanche energy support robust operation in hard-switched topologies.

Dynamic parameters-including C_iss = 2400–3200 pF, C_oss = 920–1200 pF, t_r = 13 ns, and t_f = 3.8 ns-enable fast turn-on/turn-off with minimal overlap loss. Gate plateau voltage of 3.1 V supports stable Miller region control during switching transitions.

Key Specifications

Pinout & Package

IPS050N03LG uses the PG-TO251-3-11 package: surface-mount, single-die, 3-pin variant of TO-251 with exposed drain tab for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPD050N03LG and IPU050N03LG, IPS050N03LG offers identical silicon performance in a mid-footprint PG-TO251 variant-balancing thermal capability (2.2 K/W R_thJC) and board area, making it optimal for industrial DC/DC where both reliability and layout density matter.

Availability

IPS050N03LG is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC/DC converters, telecom PoE++ PSEs, and automotive body control modules requiring stable component supply across extended production lifecycles.

Supply support for IPS050N03LG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS®3 product line-designed specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial SMPS applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 175 °C. At T_C = 100 °C, the device sustains 50 A continuous drain current-verified by thermal derating curves. Exceeding this case temperature reduces safe operating area due to increased R_DS(on) and lower avalanche energy margin, requiring careful thermal design with ≥6 cm² copper pour.

Is IPS050N03LG suitable for synchronous rectification in buck converters?

Yes-its 4.5 V logic-level gate threshold, low Q_g(sync) (13–17 nC), and 0.86–1.1 V body diode forward voltage enable efficient synchronous rectification. The device's fast reverse recovery (Q_rr = 15 nC) and low C_oss reduce shoot-through risk and improve light-load efficiency in high-frequency buck stages.

How does the avalanche rating impact system-level reliability?

The 60 mJ single-pulse avalanche energy rating allows the device to safely absorb inductive energy from transformer leakage or parasitic inductance without failure. This eliminates reliance on external clamping circuits in flyback, forward, and resonant topologies-reducing BOM count and improving long-term field reliability under transient overload conditions.

Can IPS050N03LG be used with 3.3 V microcontroller GPIOs without gate driving circuitry?

Yes-its V_GS(th) range (1–2.2 V) ensures reliable turn-on with 3.3 V logic, and R_DS(on) remains ≤7.3 mΩ at V_GS = 4.5 V. However, for full 50 A conduction at elevated temperature, a dedicated gate driver is recommended to ensure fast edge rates and minimize switching loss during high-frequency operation.