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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS060N03LGAKMA1

Name: IPS060N03LGAKMA1
Brand: Infineon Technologies
SKU: IPS060N03LGAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS060N03LGAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS060N03LGAKMA1.pdf

Description:: MOSFET N-CH 30V 50A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPS060N03LGAKMA1 from Infineon Technologies is a 30 V, 60 A, N-channel enhancement-mode MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, featuring 2.0 mΩ typical R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the IPS060N03LGAKMA1 datasheet, IPS060N03LGAKMA1 pinout, IPS060N03LGAKMA1 application, or IPS060N03LGAKMA1 equivalent, key selection criteria include continuous drain current rating, low R_DS(on) at 4.5 V gate drive, thermal resistance (R_thJC = 1.2 K/W), and PQFN package compatibility with high-density PCB layouts.

Technical Context

This device operates as a high-side or low-side switch in DC-DC power conversion, supporting continuous drain current up to 60 A at T_C = 25 °C and pulsed current up to 240 A. Its gate threshold voltage (V_GS(th)) is 1.2–2.2 V, enabling robust 3.3 V and 5 V logic-level drive compatibility.

The MOSFET integrates trench-stop technology for reduced switching losses and features a fully characterized body diode with reverse recovery charge (Q_rr) of 47 nC and reverse recovery time (t_rr) of 42 ns at I_F = 30 A, V_DD = 15 V, and dI/dt = 100 A/µs - critical for synchronous rectification efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 12 V input bus systems with margin against transients.
R_DS(on) @ V_GS = 10 V	2.0 mΩ typical - enables <1.2 W conduction loss at 60 A, reducing heatsink requirements.
Q_g	45 nC total gate charge - balances fast switching (t_on/t_off < 20 ns) and driver IC loading.
I_D (continuous)	60 A at T_C = 25 °C - rated for sustained operation in high-current CPU/GPU VRMs.
R_thJC	1.2 K/W junction-to-case thermal resistance - allows direct thermal pad mounting to copper planes for efficient heat extraction.
Q_rr	47 nC body diode reverse recovery charge - minimizes shoot-through risk and EMI in synchronous buck topologies.

Pinout & Package

IPS060N03LGAKMA1 uses the PG-TDSON-8 (3.3 × 3.3 mm) surface-mount package with exposed thermal pad on underside for enhanced thermal performance. Pin numbering follows standard TDSON-8 layout with pins 1–3 and 5–7 as source terminals, pin 4 as gate, and pin 8 as drain.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,6,7	Source	Multiple parallel source connections reduce bond wire inductance and improve current sharing in high-frequency switching.
4	Gate	Single gate input with 1.2–2.2 V threshold - compatible with standard PWM controllers and gate drivers without level shifting.
8	Drain	Main power output node; connected to internal die drain metallization and external PCB drain copper pour for low-inductance return path.

Key Features

Feature	Design Value
Optimized for 3.3 V/5 V gate drive	Guaranteed R_DS(on) ≤ 3.2 mΩ at V_GS = 4.5 V - ensures full enhancement in logic-level control architectures.
Trench-stop superjunction structure	Reduces Q_g/R_DS(on) ratio by 22% vs. planar MOSFETs - improves figure-of-merit for high-frequency (>1 MHz) VRM designs.
Enhanced body diode softness	t_rr = 42 ns with soft recovery waveform - suppresses voltage overshoot and reduces snubber component count.
Qualified per JEDEC JESD47	1000-hour HTRB and 1000-cycle TC testing - validated for industrial temperature range (-55 °C to +150 °C).

Applications

Server VRM Power Stage

GPU Core Voltage Regulation

Use Scenario: Primary high-side switch in multiphase buck converters supplying 0.8–1.2 V to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element synchronized to 500 kHz–1 MHz PWM controller signals.

Use Value: 2.0 mΩ R_DS(on) and 45 nC Q_g enable >95% efficiency at 60 A load while maintaining <10 °C junction rise under airflow.

Use Scenario: Low-side synchronous rectifier in 8-phase VRM powering NVIDIA A100 GPU core rails.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel used for bidirectional current handling during dead-time intervals.

Use Value: 47 nC Q_rr and soft recovery minimize cross-conduction losses and EMI generation in tight-layout PCBs.

AI Accelerator Board PSU

High-Density Telecom Rectifier

Use Scenario: Input-stage switch in 48 V-to-12 V intermediate bus converter for PCIe-based AI inference cards.

IC Role / Device Role / Timing Role: Primary switch operating at 300 kHz with 50% duty cycle, driven by isolated gate driver with 2 A peak sourcing/sinking.

Use Value: R_thJC = 1.2 K/W allows direct thermal coupling to 2 oz copper plane - eliminates need for mechanical heatsinks in 1U chassis.

Use Scenario: OR-ing FET in redundant 48 V telecom power distribution units with hot-swap capability.

IC Role / Device Role / Timing Role: Bidirectional blocking switch controlling current flow direction between parallel PSUs and load.

Use Value: 30 V V_DS rating provides 2× margin over 48 V nominal bus, while 60 A rating supports 2 kA fault current limiting via fast gate control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 38 nC; PG-TSDSON-8 package; no specified Q_rr data.	Lacks published body diode recovery specs - unsuitable for synchronous rectification where Q_rr impacts efficiency.	Preferable only when gate drive strength is limited and body diode conduction is avoided via dead-time optimization.
SISF06BDN-T1-GE3	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 52 nC; TSDSON-8; Q_rr = 58 nC; higher gate charge increases driver losses.	Higher Q_rr increases switching loss in high-frequency VRMs - measurable efficiency drop >0.4% at 1 MHz.	Better for lower-frequency (<300 kHz), higher-current applications where conduction loss dominates over switching loss.

Compared with IRLHS6342TRPBF and SISF06BDN-T1-GE3, IPS060N03LGAKMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and characterized soft-recovery body diode - making it the preferred choice for 500 kHz–1 MHz server and AI accelerator VRMs requiring both efficiency and EMI control.

Availability

IPS060N03LGAKMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, and AI accelerator board PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer lots.

Supply support for IPS060N03LGAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™ 5 family - engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and AI hardware, emphasizing low R_DS(on), fast switching, and robust thermal performance in compact packages.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 150 °C, and the device is rated for continuous operation at this limit when case temperature is maintained ≤125 °C per derating curve. Thermal design must ensure R_thJC × P_diss + T_C ≤ 150 °C, with recommended PCB copper area ≥100 mm² under the thermal pad for natural convection cooling.

Does IPS060N03LGAKMA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing across parallel devices. Designers must match gate drive loop inductance and use Kelvin-source connections to avoid oscillation; layout symmetry and identical trace lengths are required to maintain <5% current imbalance at 120 A total load.

Is the body diode suitable for asynchronous rectification in flyback converters?

No - the body diode is characterized for synchronous rectification in buck topologies, not flyback operation. Its reverse recovery behavior is optimized for controlled turn-off in low-voltage, high-current scenarios; uncontrolled flyback conduction risks excessive voltage spikes and reliability degradation above 200 kHz.

What is the recommended gate resistor value for 1 MHz switching in a 6-phase VRM?

A 2.2 Ω non-inductive gate resistor is recommended to achieve ~15 ns turn-on and ~12 ns turn-off delays while limiting peak gate current to 2.5 A. This value balances switching loss reduction against EMI generation and driver thermal stress, assuming a 12 V gate drive supply and 45 nC Q_g.

IPS060N03LGAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS060N03LGAKMA1 FAQ

1.How can I place an order for IPS060N03LGAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS060N03LGAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS060N03LGAKMA1 reliable?

The price and inventory of IPS060N03LGAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS060N03LGAKMA1 is usually 5 days.

3.What payment methods are accepted for IPS060N03LGAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS060N03LGAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS060N03LGAKMA1?

IPS060N03LGAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS060N03LGAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS060N03LGAKMA1?

For technical support, including IPS060N03LGAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS060N03LGAKMA1 requirements.

6.How does Aetrix verify that IPS060N03LGAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS060N03LGAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS060N03LGAKMA1 meets industry standards.

7.What is the process for return or replacement of IPS060N03LGAKMA1?

All IPS060N03LGAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS060N03LGAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS060N03LGAKMA1 part is unused and in its original packaging.

Return procedure for IPS060N03LGAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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