Infineon Technologies IPS075N03LGAKMA1

Overview

IPS075N03LGAKMA1 from Infineon Technologies is a 30 V, 75 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with R_DS(on) = 3.4 mΩ at V_GS = 10 V and 4.8 mΩ at V_GS = 4.5 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.

For engineers reviewing the IPS075N03LGAKMA1 datasheet, IPS075N03LGAKMA1 pinout, IPS075N03LGAKMA1 application, or IPS075N03LGAKMA1 equivalent, key selection criteria include low gate charge (Q_g = 42 nC), fast switching (t_on = 19 ns, t_off = 22 ns), and thermally enhanced thermal resistance (R_thJC = 0.9 K/W).

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to achieve ultra-low R_DS(on) × Q_g figure-of-merit (143 mΩ·nC) and reduced Miller charge (Q_gd = 11 nC). It supports synchronous rectification in buck converters operating up to 1 MHz.

The device features avalanche-rated ruggedness (E_AS = 220 mJ), 100% UIS-tested, and is qualified per JEDEC JESD47. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) ensures reliable turn-on with 3.3 V or 5 V logic drivers without level-shifting.

Key Specifications

Pinout & Package

PG-TDSON-8 (exposed drain pad, top-side marked), 5.15 mm × 6.25 mm footprint, 1.27 mm pitch, 0.55 mm height. Thermal pad soldered to PCB for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PbF and BSC014N04LS6, IPS075N03LGAKMA1 delivers best-in-class balance of low R_DS(on), moderate Q_g, and industry-leading thermal resistance-ideal for space-constrained, high-current POL applications where both efficiency and thermal headroom are critical.

Availability

IPS075N03LGAKMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC outputs, and telecom POL converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IPS075N03LGAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and industrial standards.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current DC-DC conversion in data center, telecom, and industrial power systems where low R_DS(on) and fast switching are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 48 A, based on the device's thermal resistance (R_thJC = 0.9 K/W) and maximum junction temperature limit of 150 °C. This value assumes proper PCB copper area and airflow per Infineon's AN2017-05 layout guidelines.

Is IPS075N03LGAKMA1 suitable for paralleling multiple devices?

Yes-the device exhibits positive temperature coefficient for R_DS(on) above 25 °C, enabling natural current sharing when paralleled. Layout must ensure matched trace lengths and symmetric thermal coupling; Infineon recommends ≤5% R_DS(on) mismatch and shared gate resistor network for stability.

Does this MOSFET require a gate resistor for EMI suppression?

A gate resistor of 2.2–4.7 Ω is recommended to dampen gate-source ringing caused by parasitic inductance in high-di/dt applications (>30 A/ns). Values outside this range risk excessive switching loss (if too large) or insufficient damping (if too small), per Infineon's Application Note AP322.

Can IPS075N03LGAKMA1 replace older OptiMOS™ 3 or 4 devices in existing designs?

Yes-pin-compatible with PG-TDSON-8 footprints used in IPS023N03LG and IPS033N03LG. Electrical improvements (lower R_DS(on), Q_g, and Q_gd) typically allow direct drop-in with measurable efficiency gain; however, gate drive timing margins should be verified due to faster switching edges.