Infineon Technologies IPS105N03LG

Overview

IPS105N03LG from Infineon Technologies is a 30 V, 105 A, N-channel Trench MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor drives. It features R_DS(on) = 3.2 mΩ (typ.) at V_GS = 10 V, Q_g = 47 nC, and t_fall = 12 ns, enabling fast switching with minimal conduction and gate drive losses.

For engineers reviewing the IPS105N03LG datasheet, IPS105N03LG pinout, IPS105N03LG application, or IPS105N03LG equivalent, key selection criteria include continuous drain current rating, gate charge for PWM efficiency, thermal resistance (R_thJA = 40 K/W), and SOA compliance under pulsed load conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) of 149 mΩ·nC. Its trench-gate structure ensures stable threshold voltage (V_GS(th) = 1.8–2.8 V) and low gate-to-source leakage (<100 nA at 25 °C).

The device supports 100% avalanche-rated operation up to E_AS = 110 mJ, and its integrated body diode exhibits t_rr = 45 ns and Q_rr = 33 nC at I_F = 52.5 A, making it suitable for hard-switched and synchronous buck topologies requiring controlled reverse recovery.

Key Specifications

Pinout & Package

IPS105N03LG uses the PG-TDSON-8 (3.3 × 3.3 mm) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1–5 are source terminals; pins 6–8 are drain terminals; pin 7 is gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N3LLH6 and IRL1404ZPBF, IPS105N03LG delivers optimal balance of low R_DS(on), moderate Q_g, industry-leading avalanche ruggedness, and compact thermal footprint-making it preferred for space-constrained, high-reliability 12–48 V power stages.

Availability

IPS105N03LG is available at Aetrix Electronics and suitable for server point-of-load converters, automotive body control modules, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPS105N03LG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 30 years of MOSFET innovation.

The OptiMOS™ product line targets high-efficiency power conversion in computing, automotive, and industrial systems, emphasizing low R_DS(on), fast switching, and robust fault handling in compact packages.

FAQ

What is the maximum recommended gate-source voltage for IPS105N03LG?

The absolute maximum V_GS is ±20 V, but the device is fully enhanced at V_GS ≥ 4.5 V and rated for continuous operation at 10 V. Driving above 15 V increases gate oxide stress and reduces long-term reliability-designs should clamp gate drive to 12 V max using Zener diodes or active limiting.

Can IPS105N03LG be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (≈ +0.65 mΩ/°C) enables inherent current sharing. For two devices, derate total current to 180 A (not 210 A) and ensure matched gate drive loop inductance (<10 nH difference) and symmetric PCB copper pours to avoid thermal runaway.

Does IPS105N03LG require a gate resistor for stability?

A gate resistor (1–5 Ω) is mandatory to dampen gate oscillation caused by L_g–C_iss resonance. Without it, ringing exceeding 25 V peak-to-peak can cause false turn-on or gate oxide damage. Layout best practice: place resistor within 2 mm of gate pin and use Kelvin source connection.

Is the exposed drain pad electrically isolated from other pins?

No-the exposed pad is internally connected to all drain terminals (pins 6 and 8) and must be soldered to a dedicated PCB drain net. It is not isolated; connecting it to ground or source will cause immediate short-circuit failure. Thermal vias beneath the pad must connect only to the drain copper pour.