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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS135N03LG

Name: IPS135N03LG
Brand: Infineon Technologies
SKU: IPS135N03LG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS135N03LG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPS135N03LG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:2,861

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Product details

Overview

IPS135N03LG from Infineon Technologies is a 30 V, 135 A, logic-level N-channel Trench MOSFET in TO-220AB package, featuring R_DS(on) = 2.4 mΩ (max) at V_GS = 10 V and 3.0 mΩ (max) at V_GS = 4.5 V, with 100% avalanche-rated ruggedness and optimized gate charge (Q_g = 72 nC) for high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IPS135N03LG datasheet, IPS135N03LG pinout, IPS135N03LG application, or IPS135N03LG equivalent, key selection criteria include continuous drain current (135 A), low R_DS(on) at 4.5 V gate drive, SOA compliance under repetitive pulse conditions, and thermal resistance (R_thJC = 0.55 K/W) for forced-air-cooled industrial power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced conduction efficiency and switching performance via reduced gate charge (Q_gd = 22 nC) and optimized output capacitance (C_oss = 2900 pF). Its logic-level gate threshold (V_GS(th) = 1.0–2.5 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The device supports unclamped inductive switching (UIS) up to 100 mJ per pulse and features a fully characterized safe operating area (SOA) for linear-mode operation. Its vertical structure and copper clip bonding ensure low parasitic inductance and stable thermal coupling between die and case.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V system-level power switches.
I_D (continuous)	135 A @ T_C = 25 °C - Sustained current capability with heatsink; derates to 95 A at 100 °C case temperature.
R_DS(on) max	3.0 mΩ @ V_GS = 4.5 V - Enables efficient 3.3 V/5 V gate drive in battery-powered motor controllers.
Q_g	72 nC @ V_GS = 10 V - Low total gate charge reduces driver power loss and EMI in 100–500 kHz SMPS designs.
E_AS	100 mJ - Rated single-pulse avalanche energy supports robustness against inductive load transients.
R_thJC	0.55 K/W - Thermal resistance from junction to case enables compact heatsink design in space-constrained inverters.

Pinout & Package

IPS135N03LG uses the standard TO-220AB package with isolated tab (drain-connected), offering mechanical compatibility with legacy mounting hardware and proven thermal performance in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from load to ground/power rail	Electrically connected to metal tab; requires insulated mounting in floating-topology applications.
Source	Reference node for gate drive and current sensing	Low-inductance source connection critical for accurate shunt-based current monitoring in half-bridge legs.
Gate	Control terminal for channel conduction	Logic-compatible input requiring ≤2.5 V V_GS(th); gate resistor selection must balance switching speed vs. ringing.

Key Features

Feature	Design Value
Optimized for 4.5 V gate drive	Guaranteed R_DS(on) ≤ 3.0 mΩ enables direct MCU interface without gate drivers in portable tools.
100% UIS tested	Each unit validated for 100 mJ unclamped inductive switching-critical for BLDC motor phase-leg reliability.
Low Q_gd/Q_g ratio	0.31 ratio (22 nC / 72 nC) improves hard-switching efficiency and reduces Miller-induced shoot-through risk.
Enhanced SOA for linear mode	Rated for 10 A @ 20 V in DC operation-supports active current limiting and analog regulation in e-fuse circuits.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 20–50 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 600 W–2 kW inverter stage.

Use Value: 3.0 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35% vs. legacy 5 V gate MOSFETs, improving full-load efficiency to >97.2%.

Use Scenario: Single-phase buck converter in 48 V-to-12 V intermediate bus conversion for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-current (120 A peak) point-of-load regulator.

Use Value: 72 nC Q_g and 0.55 K/W R_thJC enable 300 kHz operation with <1.2 °C/W thermal rise under 100 A DC load.

EV Onboard Chargers

UPS Inverters

Use Scenario: Secondary-side synchronous rectification in 3.3 kW LLC resonant converter.

IC Role / Device Role / Timing Role: Output rectifier handling 80 A RMS current with zero-voltage switching.

Use Value: 100 mJ E_AS rating ensures immunity to leakage inductance spikes during soft-switching transitions.

Use Scenario: Half-bridge output stage in 5 kVA online UPS delivering pure sine wave to medical equipment.

IC Role / Device Role / Timing Role: Hard-switched power switch operating in 50/60 Hz line-frequency modulation mode.

Use Value: Enhanced SOA allows 10 A DC current at 20 V for precise output voltage regulation during overload recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N3LLH6	R_DS(on) = 2.8 mΩ @ 4.5 V; Q_g = 85 nC; TO-220FP package (non-isolated tab)	Lacks isolated drain tab - requires insulating washer for floating topologies	Prefer when cost sensitivity outweighs isolation requirement and layout allows tab grounding.
IRF135N30	R_DS(on) = 3.5 mΩ @ 4.5 V; Q_g = 68 nC; older TrenchFET Gen 2 process	Lower UIS rating (65 mJ); no SOA graph for linear mode	Select only for legacy redesigns where gate drive margin exceeds 5 V and avalanche stress is minimal.

Compared with STL135N3LLH6 and IRF135N30, IPS135N03LG delivers superior 4.5 V R_DS(on), certified isolation, and documented linear-mode SOA - making it optimal for new designs demanding high reliability in motor control and server power.

Availability

IPS135N03LG is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, EV onboard chargers, and UPS inverters requiring stable component supply and long-term production continuity.

Supply support for IPS135N03LG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation and AEC-Q101 qualification expertise.

IPS135N03LG belongs to the OptiMOS™ 3 family, engineered specifically for high-current, high-efficiency switching in 24–48 V industrial and computing power systems where low gate-threshold and ruggedness are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPS135N03LG?

The absolute maximum V_GS is ±20 V per Infineon's official datasheet. Operation beyond ±16 V risks irreversible gate oxide damage. For reliable 4.5 V logic-level drive, a 12 V gate supply with 100 Ω series resistor is recommended to limit dv/dt-induced current spikes during fast switching.

Does IPS135N03LG support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 10 Ω gate resistors to suppress oscillation. Derate total current by 15% for thermal imbalance.

Is the TO-220AB package lead-free and RoHS-compliant?

Yes - IPS135N03LG is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The package uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

How does the 100 mJ E_AS rating translate to real-world circuit protection?

This rating means the device can absorb 100 mJ of inductive energy in a single unclamped event without failure - equivalent to interrupting 30 A through 100 µH leakage inductance at 24 V. It covers worst-case flyback spikes in BLDC motor phase legs but does not replace external clamping diodes in high-dI/dt applications.

IPS135N03LG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPS135N03LG FAQ

1.How can I place an order for IPS135N03LG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS135N03LG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS135N03LG reliable?

The price and inventory of IPS135N03LG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS135N03LG is usually 5 days.

3.What payment methods are accepted for IPS135N03LG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS135N03LG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS135N03LG?

IPS135N03LG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS135N03LG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS135N03LG?

For technical support, including IPS135N03LG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS135N03LG requirements.

6.How does Aetrix verify that IPS135N03LG is sourced from the original manufacturer or authorized distributors?

All IPS135N03LG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS135N03LG meets industry standards.

7.What is the process for return or replacement of IPS135N03LG?

All IPS135N03LG units undergo pre-shipment inspection (PSI). If there is an issue with IPS135N03LG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS135N03LG part is unused and in its original packaging.

Return procedure for IPS135N03LG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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