Infineon Technologies IPS60R1K0CEAKMA1

Overview

IPS60R1K0CEAKMA1 from Infineon Technologies is a 600 V, 1.0 Ω (max) R_DS(on), 6.8 A continuous drain current CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK SL) package with drain-connected tab, gate on pin 1, and source on pin 3. It delivers ultra-low E_oss (1.3 µJ @ 400 V), high commutation ruggedness, and optimized cost-performance for hard-switching PFC and resonant SMPS stages in LCD TV, lighting, and AC-DC adapters.

For engineers reviewing the IPS60R1K0CEAKMA1 datasheet, IPS60R1K0CEAKMA1 pinout, IPS60R1K0CEAKMA1 application, or IPS60R1K0CEAKMA1 equivalent, key selection criteria include its 600 V V_DS rating, 13 nC total gate charge, 2.06 °C/W R_thJC, 50 V/ns dv/dt ruggedness, and suitability for high-efficiency, cost-sensitive consumer power supplies.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling significantly lower R_DS(on) × Q_g figure-of-merit than conventional planar MOSFETs while maintaining robust avalanche capability (E_AS = 46 mJ) and high di/dt tolerance (500 A/µs). Its gate plateau voltage of 5.4 V ensures stable turn-on under varying drive conditions.

The device features low output capacitance energy-related value (C_o(er) = 14 pF) and time-related value (C_o(tr) = 57 pF), supporting efficient soft-switching operation in LLC and PFC topologies. Its reverse diode exhibits 220 ns t_rr and 1.5 µC Q_rr, enabling reliable synchronous rectification and bidirectional conduction in half-bridge configurations.

Key Specifications

Pinout & Package

IPS60R1K0CEAKMA1 uses the PG-TO251 (IPAK SL) surface-mount package with an exposed drain-connected metal tab for enhanced thermal dissipation. The tab is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP60N1F32 and IPP60R1K0C6, IPS60R1K0CEAKMA1 offers superior thermal performance in SMT layout (2.06 °C/W), higher avalanche energy for surge immunity, and optimized gate drive ease-making it ideal for space-constrained, high-reliability consumer power stages.

Availability

IPS60R1K0CEAKMA1 is available at Aetrix Electronics and suitable for LCD TV backlights, PC silverbox PFC stages, universal AC-DC adapters, and indoor LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPS60R1K0CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ CE product line targets cost-sensitive consumer and lighting applications, delivering best-in-class efficiency-to-price ratio for offline SMPS without compromising ruggedness or ease of use.

FAQ

What is the maximum recommended gate resistor for reliable switching?

A 12.2 Ω gate resistor is specified in the datasheet test conditions for switching characterization (td(on), tr, td(off), tf). Using 10–15 Ω ensures controlled dV/dt and minimizes oscillation while maintaining <20 ns rise time. Higher values increase switching loss; lower values risk gate ringing and overshoot beyond ±30 V dynamic rating.

Can IPS60R1K0CEAKMA1 be paralleled for higher current handling?

Yes, but only with careful layout: each device requires individual gate resistors (≥10 Ω) and ferrite beads on gate traces to suppress common-mode oscillation. Source inductance must be matched within 0.5 nH, and thermal coupling between devices should be minimized to avoid current imbalance above 70°C junction temperature.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is fully compatible with 0 V to +10 V or +12 V gate drive. Its V_GS(th) range (2.5–3.5 V) and gate plateau at 5.4 V ensure clean turn-on with standard logic-level drivers. Negative bias is unnecessary and not recommended per Infineon's application notes.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to 4.3 A (per Table 2). The SOA curve (Diagram 3) shows that at 200 V V_DS, the device supports ≤3.5 A for DC operation, dropping to ≤10 A for 100 µs pulses. Exceeding these limits risks thermal runaway or single-pulse avalanche failure.