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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPS65R950C6AKMA1

Name: IPS65R950C6AKMA1
Brand: Infineon Technologies
SKU: IPS65R950C6AKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPS65R950C6AKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: IPS65R950C6AKMA1.pdf

Description:: MOSFET N-CH 650V 4.5A TO251-3

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Product details

Overview

IPS65R950C6AKMA1 from Infineon Technologies is a 650 V, 0.95 Ω R_DS(on), 12 A pulsed drain current CoolMOS™ C6 superjunction power MOSFET in IPAK SL package with drain-connected pin 2, gate-connected pin 1, and source-connected pin 3. It delivers ultra-low E_oss (1.5 µJ @ 400 V) and Q_g (15.3 nC), enabling high-efficiency PFC and hard-switching SMPS in server power supplies and telecom rectifiers.

For engineers reviewing the IPS65R950C6AKMA1 datasheet, IPS65R950C6AKMA1 pinout, IPS65R950C6AKMA1 application, or IPS65R950C6AKMA1 equivalent, key selection criteria include its 500 A/µs body diode commutation capability, 50 mJ single-pulse avalanche energy, 3.4 °C/W R_thJC, and industrial-grade JEDEC qualification - all critical for rugged, high-density AC-DC conversion designs.

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure optimized for 650 V operation, achieving low R_DS(on) × Q_g figure-of-merit (0.95 Ω × 15.3 nC) without compromising gate drive simplicity. Its 5.1 V gate plateau voltage and 5.5 Ω gate resistance support stable switching with standard 12 V gate drivers.

The MOSFET features robust unclamped inductive switching (UIS) performance (50 mJ at T_j = 25°C) and high dv/dt ruggedness (50 V/ns), making it suitable for both hard-switched and resonant topologies where voltage transients and commutation stress are significant.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage rating for primary-side switching in universal-input offline converters.
R_DS(on),max	0.95 Ω @ 10 V V_GS, 25°C - Defines conduction loss in continuous-current PFC boost stages and LLC primary switches.
Q_g,typ	15.3 nC - Determines gate drive power and switching speed in 65–100 kHz hard-switched applications.
E_oss	1.5 µJ @ 400 V - Directly impacts turn-on switching loss in ZVS/ZCS circuits and reduces snubber requirements.
I_D,pulse	12 A - Supports peak current handling in transient-loaded server PSUs and UPS inverters.
Body diode dI/dt	500 A/µs - Enables reliable commutation in totem-pole PFC and synchronous rectification without oscillation.
R_thJC	3.4 °C/W - Enables thermal design margin for 37 W continuous dissipation at T_C = 25°C in compact IPAK SL layouts.

Pinout & Package

IPS65R950C6AKMA1 uses the IPAK SL (TO-251 variant) surface-mount package with gull-wing leads and exposed drain pad on the underside for enhanced thermal transfer. Pin 1 is gate, Pin 2 is drain (internally connected to package tab), and Pin 3 is source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤10.2 Ω series gate resistor to limit ringing during 6.6 ns turn-on delay and 5.2 ns rise time.
Pin 2	Drain	Main high-voltage power terminal; electrically tied to exposed metal tab for low-inductance, high-current return path and thermal conduction.
Pin 3	Source	Reference node for gate drive and current sensing; must be routed with minimal loop area to suppress noise in high-dI/dt switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	0.95 Ω × 15.3 nC - Reduces combined conduction + switching losses by >25% vs. prior-generation 650 V SJ-MOSFETs in 65 kHz PFC.
High commutation ruggedness	500 A/µs body diode dI/dt - Eliminates need for external snubbers in totem-pole PFC and enables fast zero-voltage switching transitions.
Industrial-grade reliability	Qualified per JEDEC J-STD-020 & JESD22 - Ensures long-term stability under thermal cycling and humidity exposure in server and telecom environments.
Low E_oss energy	1.5 µJ @ 400 V - Lowers turn-on loss in resonant LLC and half-bridge topologies, improving full-load efficiency by up to 0.8%.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end PFC stage operating at 65 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-voltage switching element controlling boost inductor current and shaping input current waveform.

Use Value: 0.95 Ω R_DS(on) and 1.5 µJ E_oss enable >96.2% PFC efficiency at 230 VAC full load while maintaining <85°C case temperature.

Use Scenario: Main switch in 2 kW isolated DC-DC converter for -48 V telecom distribution, using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side bridge leg switch subjected to 400 V bus voltage and 50 V/ns voltage transients during ZVS transitions.

Use Value: 50 V/ns dv/dt ruggedness and 50 mJ UIS rating ensure reliable operation without desaturation protection circuitry.

UPS Inverter Stage

LED Driver Power Stage

Use Scenario: Output H-bridge switch in 1 kVA online UPS delivering clean 230 VAC sine wave with <3% THD.

IC Role / Device Role / Timing Role: Fast-turning power switch managing bidirectional energy flow between battery bank and AC output.

Use Value: 12 A pulsed current rating and 500 A/µs diode dI/dt support 200% overload for 10 s without thermal runaway or commutation failure.

Use Scenario: Primary switch in 150 W constant-current LED driver for street lighting, operating in quasi-resonant flyback mode.

IC Role / Device Role / Timing Role: High-voltage switching transistor regulating energy transfer into secondary-side LED string via transformer coupling.

Use Value: 650 V V_DS rating accommodates reflected voltage spikes up to 480 V, eliminating need for clamping diodes in outdoor-rated fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD7	Higher R_DS(on) (1.1 Ω), lower Q_g (12.5 nC), integrated fast-recovery body diode (t_rr = 110 ns)	Better suited for ZVS-heavy LLC resonant converters where diode recovery dominates loss	Select when diode reverse recovery performance outweighs conduction loss sensitivity
STP65N6F6	Lower cost planar MOSFET, higher R_DS(on) (1.2 Ω), no superjunction optimization, 3× higher E_oss	Limited to lower-frequency (<30 kHz), non-resonant topologies due to higher switching loss	Choose only for cost-sensitive, low-power industrial SMPS where efficiency >94% is not required

Compared with IPW65R110CFD7 and STP65N6F6, IPS65R950C6AKMA1 offers the best balance of low conduction loss, moderate gate charge, and industrial ruggedness - making it optimal for high-density, high-efficiency PFC and hard-switched SMPS where thermal headroom and reliability are prioritized over lowest gate drive complexity.

Availability

IPS65R950C6AKMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverter stages requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPS65R950C6AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ C6 series was engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing low-loss superjunction architecture and robustness under real-world switching stress.

FAQ

What is the maximum continuous drain current for IPS65R950C6AKMA1 at 100°C case temperature?

The maximum continuous drain current is 2.8 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limits imposed by the IPAK SL package's 3.4 °C/W junction-to-case resistance and safe operating area constraints at elevated temperatures.

Does IPS65R950C6AKMA1 require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive and does not require negative turn-off bias. Its 3.5 V maximum gate threshold voltage and 5.1 V gate plateau ensure stable enhancement-mode behavior and immunity to false turn-on under typical PCB layout parasitics.

Can IPS65R950C6AKMA1 be used in totem-pole PFC configurations?

Yes - its 500 A/µs body diode dI/dt rating, 226 ns reverse recovery time, and 1.3 µC Q_rr make it suitable for bidirectional conduction in totem-pole PFC. However, external gate resistors and careful layout are required to manage shoot-through risk during zero-crossing transitions.

Is the IPAK SL package lead-free and RoHS-compliant?

Yes - the device uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements for unlimited floor life at ≤30°C/60% RH.

IPS65R950C6AKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 15.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 328 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

IPS65R950C6AKMA1 FAQ

1.How can I place an order for IPS65R950C6AKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPS65R950C6AKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPS65R950C6AKMA1 reliable?

The price and inventory of IPS65R950C6AKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPS65R950C6AKMA1 is usually 5 days.

3.What payment methods are accepted for IPS65R950C6AKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPS65R950C6AKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPS65R950C6AKMA1?

IPS65R950C6AKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPS65R950C6AKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPS65R950C6AKMA1?

For technical support, including IPS65R950C6AKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPS65R950C6AKMA1 requirements.

6.How does Aetrix verify that IPS65R950C6AKMA1 is sourced from the original manufacturer or authorized distributors?

All IPS65R950C6AKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPS65R950C6AKMA1 meets industry standards.

7.What is the process for return or replacement of IPS65R950C6AKMA1?

All IPS65R950C6AKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPS65R950C6AKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPS65R950C6AKMA1 part is unused and in its original packaging.

Return procedure for IPS65R950C6AKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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