Infineon Technologies IPS80R2K4P7AKMA1

Overview

IPS80R2K4P7AKMA1 from Infineon is an 800V superjunction N-channel MOSFET in PG-TO251-3 (IPAK SL) package, featuring R_DS(on) = 2.4 Ω (max), Q_g = 7.5 nC (typ), V_GS(th) = 3 V (typ), integrated Zener ESD protection, and JEDEC-qualified industrial reliability. It serves as a primary switch in hard/soft-switching flyback converters for LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPS80R2K4P7AKMA1 datasheet, IPS80R2K4P7AKMA1 pinout, IPS80R2K4P7AKMA1 application, or IPS80R2K4P7AKMA1 equivalent, key selection criteria include its 800V V_DS, low 2.4 Ω R_DS(on) at 10 V_GS, 3 V gate threshold with ±0.5 V variation, 0.74 µJ E_oss at 500 V, and IPAK SL thermal performance for compact high-voltage SMPS designs.

Technical Context

This CoolMOS™ P7 device employs charge-compensation superjunction architecture to minimize conduction and switching losses simultaneously. Its optimized cell design delivers best-in-class figure-of-merit R_DS(on) × E_oss, reduced C_iss (150 pF) and C_oss (3.8 pF), and tight V_GS(th) distribution (2.5–3.5 V).

The integrated Zener diode provides robust ±20 V gate-source ESD protection (HBM Class 1C), while its 5.6 °C/W R_thJC enables efficient heat transfer to the PCB copper pour. The device supports parallel operation with gate ferrite bead recommendations and exhibits 100 V/ns dv/dt ruggedness under specified conditions.

Key Specifications

Pinout & Package

Package: PG-TO251-3 (IPAK SL) - Surface-mount plastic package with exposed drain tab for thermal conduction to PCB copper pour; lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP80NF55-08 and IXTP80N10L2, IPS80R2K4P7AKMA1 uniquely balances 800 V capability, ultra-low E_oss, tight V_GS(th), and integrated ESD protection in a surface-mount package-making it optimal for space-constrained, high-reliability flyback and auxiliary supplies where gate drive simplicity and thermal efficiency are critical.

Availability

IPS80R2K4P7AKMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power AC/DC adapters, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPS80R2K4P7AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the CoolMOS™ P7 series-Infineon's 800 V superjunction MOSFET family engineered specifically for high-efficiency, high-density offline SMPS in consumer, lighting, and industrial applications where low E_oss, ease of drive, and production yield are critical.

FAQ

What is the maximum continuous drain current for IPS80R2K4P7AKMA1 at 100°C case temperature?

The maximum continuous drain current is 1.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PG-TO251-3 package and ensures safe operation within the 150°C maximum junction temperature limit under steady-state conditions with adequate PCB copper area.

Does IPS80R2K4P7AKMA1 include a body diode, and what are its key reverse recovery parameters?

Yes, it integrates a fast-recovery body diode with typical reverse recovery time (t_rr) of 600 ns, Q_rr of 2.5 µC, and peak reverse recovery current (I_rrm) of 5.6 A at V_R = 400 V, I_F = 0.41 A, and di_F/dt = 50 A/µs. These values support soft-switching in quasi-resonant flyback topologies without external snubbers.

Can IPS80R2K4P7AKMA1 be paralleled with identical units, and what layout guidance applies?

Yes, it is designed for parallel operation due to its positive temperature coefficient of R_DS(on) and tight V_GS(th) distribution. Infineon recommends using individual gate ferrite beads (or separate totem-pole drivers) per device to suppress oscillation and ensure balanced current sharing-especially above 1 A total RMS current.

Is the exposed drain tab electrically isolated, and how should it be connected on the PCB?

No, the exposed drain tab (Pin 2) is electrically connected to the drain terminal and must be soldered directly to a large copper pour serving as both thermal sink and high-voltage node. It must not be connected to source or ground planes. Minimum recommended copper area is 200 mm² with 2 oz copper and thermal vias to inner layers for optimal R_thJC performance.