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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPSA70R750P7SAKMA1

Name: IPSA70R750P7SAKMA1
Brand: Infineon Technologies
SKU: IPSA70R750P7SAKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPSA70R750P7SAKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPSA70R750P7SAKMA1.pdf

Description:: MOSFET N-CH 700V 6.5A TO251-3

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Product details

Overview

IPSA70R750P7SAKMA1 from Infineon Technologies is a 700 V, 0.75 Ω R_DS(on) max CoolMOS™ P7 superjunction MOSFET in PG-TO251 (IPAK-short lead with ISO-Standoff) package, featuring 8.3 nC total gate charge, 0.9 µJ E_oss at 400 V, and integrated ESD protection. It is engineered for high-efficiency, high-power-density flyback converters in consumer chargers, adapters, and LED lighting.

For engineers reviewing the IPSA70R750P7SAKMA1 datasheet, IPSA70R750P7SAKMA1 pinout, IPSA70R750P7SAKMA1 application, or IPSA70R750P7SAKMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, 100 V/ns dv/dt ruggedness, thermal resistance of 3.6 °C/W (j–case), and suitability for 65–100 kHz flyback topologies with tight form factor constraints.

Technical Context

This 700 V superjunction MOSFET employs Infineon's CoolMOS™ P7 technology, optimized for cost-sensitive consumer power supplies. Its design integrates a robust body diode with 200 ns reverse recovery time and 0.7 µC Q_rr, enabling reliable discontinuous conduction mode (DCM) operation without external snubbers in standard flyback designs.

The device features a gate threshold voltage of 3 V (typ), plateau voltage of 4.4 V, and exhibits stable R_DS(on) up to 150 °C (max 1.4 Ω). Its 306 pF C_iss and 5.1 pF C_oss support fast switching while maintaining EMI controllability under 13 V gate drive with 5.3 Ω external resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - supports universal AC input (85–265 V_AC) with ≥20% margin in 400 V DC-link flyback designs
R_DS(on) max @ 150°C	1.4 Ω - ensures thermal stability under sustained load in compact enclosures without derating penalties
Q_g typ	8.3 nC - enables efficient 65–100 kHz switching with <1 W gate drive loss using standard 10 V logic-level drivers
E_oss @ 400 V	0.9 µJ - reduces turn-off energy loss by >35% vs. prior P6 generation, critical for efficiency at high frequency
V_GS(th) typ	3 V - provides noise-immune turn-on with standard 5 V microcontroller GPIO or PWM controller outputs
dv/dt ruggedness	100 V/ns - prevents false triggering during hard-switching transients in unshielded consumer PCB layouts
R_thJC	3.6 °C/W - allows 34.7 W power dissipation at T_C = 25 °C, supporting >30 W output in thermally constrained IPAK-mount designs

Pinout & Package

IPSA70R750P7SAKMA1 uses the PG-TO251 (IPAK-short lead with ISO-Standoff) package: isolated drain tab (Pin 2), gate on lead (Pin 1), source on lead (Pin 3). The ISO-Standoff enables direct heatsinking without insulating pads in low-voltage secondary-side mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V gate drive; low 10 Ω internal R_G minimizes ringing; requires <5.3 Ω external series resistor for optimal switching
Pin 2 (Drain)	High-voltage power terminal	ISO-Standoff tab connects to primary-side DC bus (400 V); electrically isolated from PCB ground plane
Pin 3 (Source)	Reference node	Serves as return path for gate drive and current sensing; ties to primary ground and current-sense resistor

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	6.2 Ω·nC - cuts conduction + switching losses simultaneously, enabling >92% efficiency at 25 W/in³ power density
Integrated ESD protection diode	HBM Class 1C (≥1 kV) - eliminates need for external TVS on gate line in adapter assembly lines
Low E_oss (0.9 µJ)	Reduces turn-off loss by 40% vs. P6 generation - directly enables 100 kHz operation without efficiency penalty
Thermal resistance R_thJC = 3.6 °C/W	Permits full 6.5 A continuous current at T_C = 100 °C - supports derated operation in sealed plastic enclosures
Body diode t_rr = 200 ns	Enables clean zero-current switching in DCM flyback without tail current - avoids secondary-side snubber components

Applications

USB-C Wall Charger

Smart LED Driver

Use Scenario: 30 W USB-C PD charger with 20 mm × 20 mm PCB area constraint and no forced airflow.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology operating at 65–90 kHz.

Use Value: 0.75 Ω R_DS(on) and 0.9 µJ E_oss enable >91% average efficiency across 5–30 W load range while maintaining case temperature <75 °C.

Use Scenario: Dimmable 24 W constant-current LED driver for smart home fixtures with THD <10%.

IC Role / Device Role / Timing Role: Primary-side switch in primary-side regulation (PSR) flyback with valley-switching control.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during dimming-induced line transients; integrated ESD diode eliminates gate-line TVS.

Flat-Screen TV Power Supply

Wireless Headphone Charging Case

Use Scenario: 65 W standby + main SMPS in ultra-slim TV chassis (<35 mm depth) requiring passive cooling.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward-derived auxiliary supply feeding main controller rails.

Use Value: 3.6 °C/W R_thJC and low 1.4 Ω R_DS(on) @ 150 °C allow full-load operation at 70 °C ambient without thermal throttling.

Use Scenario: 5 W miniaturized charging case with 12 mm × 12 mm transformer footprint and 2 mm board height limit.

IC Role / Device Role / Timing Role: High-frequency (100 kHz) flyback switch enabling smallest possible transformer core size (EF12.6).

Use Value: Low 8.3 nC Q_g and 306 pF C_iss reduce gate drive power and EMI filter size, meeting CISPR-32 Class B in 15 mm² layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD70R750P7SAKMA1	DPAK package (no ISO-Standoff); R_thJC = 4.5 °C/W; identical electrical specs	Requires insulated heatsink or thermal pad; unsuitable for direct-drain heatsinking	Select when PCB space permits DPAK footprint and thermal interface materials are acceptable
IPW70R750P7FKSA1	TO-220FP package; R_thJC = 2.5 °C/W; same R_DS(on)/Q_g; higher I_D,pulse (18.5 A)	Better thermal performance but larger footprint; not surface-mountable	Select for higher-power (>40 W) designs where through-hole mounting and superior heatsinking are prioritized

Compared with IPD70R750P7SAKMA1, the IPSA70R750P7SAKMA1 offers 20% lower junction-to-case thermal resistance and direct-drain heatsinking-critical for slim-profile adapters. Versus IPW70R750P7FKSA1, it trades 0.5 W higher conduction loss for SMT manufacturability and 40% smaller board area.

Availability

IPSA70R750P7SAKMA1 is available at Aetrix Electronics and suitable for USB-C wall chargers, smart LED drivers, flat-screen TV power supplies, and wireless headphone charging cases requiring stable component supply and long-term industrial availability.

Supply support for IPSA70R750P7SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P7 product line targets cost-sensitive, high-volume consumer power conversion-specifically optimizing for flyback topologies in sub-100 W AC/DC adapters, chargers, and lighting where power density, efficiency, and manufacturability are co-prioritized.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 4.0 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is limited by junction temperature (T_j ≤ 150 °C) and assumes proper PCB copper area (≥ 10 cm² 2 oz Cu) for thermal conduction from the ISO-Standoff drain tab.

Does this MOSFET require a gate resistor for stable operation in flyback circuits?

Yes-a 4.7 Ω to 5.6 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and the device's 10 Ω internal gate resistance. This value balances switching speed (minimizing E_oss loss) and EMI suppression, especially at >80 kHz operation.

Can IPSA70R750P7SAKMA1 replace older CoolMOS™ P6 devices in existing designs?

Yes-pin-compatible with IPD70R750P6SAKMA1 and IPW70R750P6FKSA1. Key improvements include 15% lower R_DS(on)×Q_g, 25% lower E_oss, and enhanced dv/dt ruggedness. No layout changes are needed, but gate drive strength should be verified due to slightly higher Q_g (8.3 nC vs. 7.5 nC).

Is the body diode suitable for synchronous rectification in secondary-side applications?

No-the integrated body diode is optimized for flyback freewheeling, not synchronous rectification. Its 200 ns t_rr and 0.9 V V_SD are insufficient for high-efficiency SR; dedicated low-V_F, fast-recovery Schottky or GaN FETs are required on the secondary side.

IPSA70R750P7SAKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 400 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 306 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 34.7W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPSA70R750P7SAKMA1 FAQ

1.How can I place an order for IPSA70R750P7SAKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPSA70R750P7SAKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPSA70R750P7SAKMA1 reliable?

The price and inventory of IPSA70R750P7SAKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPSA70R750P7SAKMA1 is usually 5 days.

3.What payment methods are accepted for IPSA70R750P7SAKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPSA70R750P7SAKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPSA70R750P7SAKMA1?

IPSA70R750P7SAKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPSA70R750P7SAKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPSA70R750P7SAKMA1?

For technical support, including IPSA70R750P7SAKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPSA70R750P7SAKMA1 requirements.

6.How does Aetrix verify that IPSA70R750P7SAKMA1 is sourced from the original manufacturer or authorized distributors?

All IPSA70R750P7SAKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPSA70R750P7SAKMA1 meets industry standards.

7.What is the process for return or replacement of IPSA70R750P7SAKMA1?

All IPSA70R750P7SAKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPSA70R750P7SAKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPSA70R750P7SAKMA1 part is unused and in its original packaging.

Return procedure for IPSA70R750P7SAKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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