Infineon Technologies IPSA70R900P7SAKMA1

Overview

IPSA70R900P7SAKMA1 from Infineon Technologies is a 700 V, 0.9 Ω R_DS(on) max, CoolMOS™ P7 superjunction N-channel power MOSFET in PG-TO251 (IPAK-short lead with ISO-Standoff) package, featuring 6.8 nC typical gate charge, 0.9 µJ E_oss at 400 V, and integrated ESD protection diode - designed for high-efficiency flyback converters in AC/DC adapters and LED lighting.

For engineers reviewing the IPSA70R900P7SAKMA1 datasheet, IPSA70R900P7SAKMA1 pinout, IPSA70R900P7SAKMA1 application, or IPSA70R900P7SAKMA1 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, JEDEC-qualified thermal robustness, 100 V/ns dv/dt ruggedness, and suitability for cost-sensitive, high-power-density consumer SMPS designs.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure optimized for fast switching and low conduction losses in discontinuous conduction mode (DCM) and quasi-resonant (QR) flyback topologies. Its 3 V typical gate threshold voltage and 4.4 V gate plateau enable stable turn-on with standard 12 V gate drivers while maintaining noise immunity.

The MOSFET integrates a fast-recovery body diode (t_rr = 160 ns, Q_rr = 0.5 µC) and exhibits excellent hard-switching SOA up to 10 ms at 25 °C, supported by 4.1 °C/W junction-to-case thermal resistance and validated avalanche capability (I_AS = 3.6 A).

Key Specifications

Pinout & Package

IPSA70R900P7SAKMA1 uses the PG-TO251 (IPAK-short lead with ISO-Standoff) package: a 3-pin through-hole variant with isolated drain tab for enhanced creepage/clearance in high-voltage AC/DC applications. The drain connects directly to the exposed metal tab (Pin 2), gate to Pin 1, and source to Pin 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPD70R900P7SAKMA1 and IPP60R900P7XKMA1, IPSA70R900P7SAKMA1 uniquely combines through-hole manufacturability, ISO-Standoff isolation, and low R_thJC-making it optimal for high-reliability, high-power-density consumer AC/DC where creepage and thermal performance are co-constrained.

Availability

IPSA70R900P7SAKMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, TV power supplies, and industrial AC/DC modules requiring stable component supply across multi-year production cycles.

Supply support for IPSA70R900P7SAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ P7 product line-engineered specifically for cost-sensitive, high-efficiency flyback converters in consumer electronics, balancing performance, ruggedness, and manufacturability at scale.

FAQ

What is the maximum continuous drain current for IPSA70R900P7SAKMA1 at 100 °C case temperature?

The maximum continuous drain current is 3.5 A at T_C = 100 °C, as specified in Table 2 of the datasheet under "Continuous drain current" with note "TC = 100°C". This rating accounts for thermal derating and ensures safe operation within the SOA limits at elevated temperatures.

Does IPSA70R900P7SAKMA1 require an external gate resistor, and what value is recommended?

Yes, a series gate resistor is required to control switching speed and suppress oscillation. The datasheet recommends R_G = 5.3 Ω for characterization (Table 5), and practical designs typically use 4.7–10 Ω depending on layout parasitics and desired dV/dt. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.

Can IPSA70R900P7SAKMA1 be paralleled with another unit for higher current handling?

MOSFET paralleling is feasible but requires careful design: the datasheet explicitly recommends using ferrite beads on each gate or separate totem-pole drivers to ensure balanced dynamic current sharing. Thermal coupling and layout symmetry are critical; mismatched R_DS(on) temperature coefficients (positive) help stabilize static sharing, but dynamic imbalance remains a key risk.

Is the drain tab of IPSA70R900P7SAKMA1 electrically isolated from the PCB mounting surface?

Yes-the "ISO-Standoff" feature means the drain-connected metal tab is elevated above the package base with molded insulation, providing inherent creepage and clearance. It does not require an additional insulating pad when mounted directly to a heatsink or PCB, satisfying ≥8 mm creepage requirements for 700 V applications per IEC 60950-1.