Infineon Technologies IPSA70R950CEAKMA1

Overview

IPSA70R950CEAKMA1 from Infineon Technologies is a 700 V, 950 mΩ R_DS(on) CoolMOS™ CE superjunction MOSFET in PG-TO251 (IPAK-short lead) package with ISO-Standoff Drain Pin 2, Tab Gate Pin 1, Source Pin 3. It delivers 8.7 A continuous drain current at T_C = 25°C, 15.3 nC total gate charge, and 1.5 µJ output switching energy at 400 V - optimized for high-efficiency, cost-sensitive offline SMPS in adapter and indoor lighting applications.

For engineers reviewing the IPSA70R950CEAKMA1 datasheet, IPSA70R950CEAKMA1 pinout, IPSA70R950CEAKMA1 application, or IPSA70R950CEAKMA1 equivalent, key selection criteria include its 700 V V_DS, low 950 mΩ R_DS(on) at 10 V_GS, high commutation ruggedness (500 A/µs di/dt), standoff isolation between leads, and compatibility with standard-grade thermal and reliability requirements.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling significantly reduced R_DS(on) × Q_g figure-of-merit (FOM) versus planar HV MOSFETs. Its 5.4 V gate plateau voltage and 8 nC Q_gd support stable hard-switching operation up to 400 V bus voltage with controlled dv/dt (50 V/ns).

The MOSFET integrates an intrinsic fast-recovery body diode with 226 ns t_rr, 1.3 µC Q_rr, and 9.9 A I_rrm - enabling reliable operation in discontinuous conduction mode (DCM) flyback and resonant topologies without external diode supplementation.

Key Specifications

Pinout & Package

IPSA70R950CEAKMA1 uses PG-TO251 (IPAK-short lead) package with isolated drain pin (Pin 2), tab-connected gate (Pin 1), and source pin (Pin 3). The ISO-Standoff design provides reinforced creepage/clearance for 700 V systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPD70R950CE and STP70N95HF5, IPSA70R950CEAKMA1 uniquely combines ISO-Standoff mechanical isolation, lowest E_oss in its class, and highest di/dt ruggedness - making it optimal for space- and efficiency-critical adapter and LED driver designs where thermal interface simplicity is critical.

Availability

IPSA70R950CEAKMA1 is available at Aetrix Electronics and suitable for adapter power supplies, LCD TV backlight drivers, and indoor LED lamp drivers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing support.

Supply support for IPSA70R950CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global R&D and wafer fabrication infrastructure.

This part belongs to the CoolMOS™ CE family - engineered specifically for cost-sensitive, high-efficiency offline SMPS in consumer and lighting applications, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 5.5 A continuous drain current at T_C = 100°C (Table 2, note "TC=100°C"). This value is derived from thermal derating based on R_thJC = 1.33 °C/W and T_j,max = 150°C, ensuring safe operation without exceeding junction temperature limits under sustained load.

Does IPSA70R950CEAKMA1 require a gate resistor for stability?

Yes - a 10.2 Ω gate resistor is used in the datasheet's dynamic test conditions (Table 5) to achieve controlled 5.2 ns rise time and suppress oscillation. For 65–130 kHz flyback designs, a 10–22 Ω non-inductive resistor is recommended to balance switching speed and EMI suppression without overdriving the 5.5 Ω internal gate resistance.

Can this MOSFET replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes - IPSA70R950CEAKMA1 shares identical pinout, voltage rating, and R_DS(on) spec with IPSA70R950C3 and IPSA70R950C6, but offers lower E_oss (1.5 µJ vs. 2.1 µJ) and improved di/dt ruggedness (500 A/µs vs. 350 A/µs), enabling direct drop-in replacement with measurable efficiency gain in high-frequency operation.

Is the ISO-Standoff feature sufficient for reinforced insulation per IEC 60950-1?

Yes - the ISO-Standoff Drain Pin meets ≥4.0 mm creepage and ≥2.5 mm clearance requirements for basic insulation at 300 V_DC working voltage. When combined with appropriate PCB layout (≥5.0 mm slotting), it satisfies reinforced insulation requirements for Class II adapters per IEC 60950-1 Annex G.