Infineon Technologies IPT009N06NM5ATMA1

Overview

IPT009N06NM5ATMA1 from Infineon Technologies is a 60 V, 0.9 mΩ N-channel OptiMOSTM5 power MOSFET in PG-HSOF-8 (TOLL) package, rated for 427 A continuous drain current at TC=25 °C and featuring 171 nC total gate charge and 181 nC output charge. It delivers ultra-low RDS(on) with 100% avalanche testing, optimized for high-efficiency synchronous rectification in server VRMs and DC-DC converters.

For engineers reviewing the IPT009N06NM5ATMA1 datasheet, IPT009N06NM5ATMA1 pinout, IPT009N06NM5ATMA1 application, or IPT009N06NM5ATMA1 equivalent, key selection criteria include thermal resistance (RthJC = 0.3 °C/W), Qg/Qoss ratio for hard-switching efficiency, and TOLL package suitability for high-current, low-inductance PCB layouts in industrial and computing power systems.

Technical Context

This device implements an advanced trench-gate superjunction structure enabling sub-1 mΩ conduction with fast switching dynamics: td(on)/tr = 20/27 ns and td(off)/tf = 63/31 ns at 30 V VDD, 150 A ID, and 1.6 Ω external gate resistance. Its gate plateau voltage of 4.5 V supports robust drive margin under high di/dt conditions.

The integrated body diode exhibits 0.88 V forward voltage at 150 A and 25 °C, with 30 ns reverse recovery time and 25 nC Qrr-critical for minimizing commutation loss in synchronous buck topologies operating above 300 kHz.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL) - thermally enhanced leadless package with exposed drain tab on bottom side for direct heatsink attachment and low-inductance source-drain loop.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-RDS(on) power MOSFET applications.

Compared with IXTH30N60L2 and STL220N6F7, IPT009N06NM5ATMA1 uniquely combines 60 V rating, sub-1 mΩ RDS(on), 0.3 °C/W RthJC, and 681 mJ EAS-making it optimal for thermally constrained, high-efficiency synchronous rectification in computing and industrial power supplies.

Availability

IPT009N06NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for IPT009N06NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and e-mobility applications where ultra-low RDS(on) and superior thermal performance are mandatory.

FAQ

What is the maximum recommended gate drive voltage for IPT009N06NM5ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 12 V may marginally reduce RDS(on) but increases gate oxide stress and ESD vulnerability; 5 V drive yields higher RDS(on) (~1.2 mΩ) and is acceptable only in low-frequency, high-temperature applications where conduction loss dominates.

Can IPT009N06NM5ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (normalized to 25 °C, increases ~1.8× at 175 °C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <5 °C junction temperature delta between devices.

Does the TOLL package require special PCB layout considerations?

Yes-the exposed drain tab must be soldered to a large, thermally optimized copper pour (≥6 cm², 70 µm thick) connected to internal ground or heatsink plane. Source pins 2–8 must be routed with equal-length, wide traces to minimize loop inductance; gate trace should be short and shielded from drain noise to prevent false turn-on.

Is IPT009N06NM5ATMA1 suitable for automotive AEC-Q101 qualification?

No-it is qualified per JEDEC JESD47 for industrial applications only. While its 175 °C max junction temperature and 100% avalanche test align with some AEC-Q101 stress requirements, it lacks formal AEC-Q101 certification, including temperature cycling, humidity bias HAST, and ESD testing per AEC standards.