Infineon Technologies IPT014N08NM5ATMA1

Overview

IPT014N08NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-current, low-voltage battery-powered systems. It delivers 80 V V_DS, 1.4 mΩ R_DS(on) max at V_GS = 10 V, 331 A continuous drain current (T_C = 25 °C), and 160 nC total gate charge - enabling high-efficiency synchronous rectification in 48 V server power supplies and motor inverters.

For engineers reviewing the IPT014N08NM5ATMA1 datasheet, IPT014N08NM5ATMA1 pinout, IPT014N08NM5ATMA1 application, or IPT014N08NM5ATMA1 equivalent, key selection criteria include its ultra-low R_DS(on) × Q_G figure-of-merit, 100% avalanche-rated ruggedness, HSOF-8 package thermal performance, and validated operation up to 175 °C junction temperature.

Technical Context

This OptiMOSTM5 device uses trench-gate superjunction technology to achieve simultaneous low conduction loss and fast switching. Its 1.4 mΩ R_DS(on) and 187 nC Q_OSS support high-frequency operation in hard-switched and resonant topologies, while the integrated body diode exhibits 60.5 ns t_rr and 169 nC Q_RR at 100 A.

The MOSFET is characterized for industrial-grade reliability with JEDEC JESD22 qualification, 175 °C maximum operating temperature, and 632 mJ single-pulse avalanche energy. Gate threshold voltage is tightly distributed (2.2–3.8 V), ensuring stable turn-on behavior across temperature and manufacturing variation.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (Heat Sink Overlaid Flatlead), thermally enhanced surface-mount package with exposed drain tab on bottom side for direct PCB copper cooling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Compared with IPB017N08N5ATMA1 and IRFH7185TRPBF, IPT014N08NM5ATMA1 offers the lowest R_DS(on) and highest current rating in HSOF-8, making it optimal for conduction-loss-dominated 48–60 V systems where thermal coupling to PCB copper is prioritized.

Availability

IPT014N08NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, 48 V telecom rectifiers, industrial motor inverters, and battery energy storage systems requiring stable component supply and long-lifecycle support.

Supply support for IPT014N08NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

This device belongs to the OptiMOSTM5 family - engineered specifically for high-efficiency, high-current power conversion in data center, telecom, and industrial motor drives where low R_DS(on) and ruggedness are critical.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the standard turn-on voltage for full R_DS(on) performance. Operating above 15 V increases gate oxide stress and accelerates wear-out; sustained use at 18–20 V is not recommended beyond transient conditions. The typical V_GS(th) range of 2.2–3.8 V ensures robust immunity to noise-induced turn-on.

How does the HSOF-8 package improve thermal performance compared to standard SO-8?

The HSOF-8 package features an exposed drain tab on the bottom surface that directly contacts the PCB copper pour, achieving 0.27 °C/W typical R_thJC. This is 3.5× better than standard SO-8's ~1.0 °C/W, enabling 300 W power dissipation at T_C = 25 °C. No thermal pad or solder paste is required - mechanical pressure and standard reflow ensure optimal thermal transfer.

Is the body diode suitable for synchronous rectification without external Schottky assist?

Yes - the integrated body diode is characterized with 60.5 ns t_rr and 169 nC Q_RR at 100 A, and exhibits soft recovery behavior. In 48 V synchronous buck converters operating at ≤500 kHz, it performs comparably to discrete 45 V Schottky diodes, eliminating need for external parallel diodes while simplifying layout and reducing BOM count.

What is the significance of the "M5" suffix in the OptiMOSTM5 naming convention?

The "M5" denotes the fifth-generation OptiMOS trench-gate superjunction process, which introduces deeper trench etching, improved cell pitch density, and optimized doping profiles. This yields 25 % lower R_DS(on) × Q_G versus M4, reduced Crss/Ciss ratio for lower Miller effect, and enhanced avalanche ruggedness - all verified through 100 % production testing per JEDEC JESD22-A108.