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Infineon Technologies IPT017N10NM5LF2ATMA1

Part No.:
IPT017N10NM5LF2ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerSFN
Datasheet:
AetrixIPT017N10NM5LF2ATMA1.pdf
Description:
IPT017N10NM5LF2ATMA1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

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Product details

Overview

IPT017N10NM5LF2ATMA1 from Infineon is a 100 V, 1.7 mΩ N-channel linear MOSFET in PG-HSOF-8 (TOLL) package, optimized for hot-swap and e-fuse applications. It delivers 321 A continuous drain current at TC = 25 °C, features 100% avalanche tested ruggedness, and supports high-pulse operation up to 1284 A with 775 mJ single-pulse avalanche energy.

For engineers reviewing the IPT017N10NM5LF2ATMA1 datasheet, IPT017N10NM5LF2ATMA1 pinout, IPT017N10NM5LF2ATMA1 application, or IPT017N10NM5LF2ATMA1 equivalent, key selection criteria include RDS(on) stability over temperature, SOA robustness under linear-mode stress, gate charge profile for fast switching control, and thermal resistance (RthJC = 0.4 °C/W) for high-power board-level thermal design.

Technical Context

This OptiMOS™ 5 Linear FET 2 device uses trench-based silicon technology with enhanced SOA for extended linear-mode operation. Its low RDS(on) of 1.7 mΩ max at VGS = 10 V and 150 A enables minimal conduction loss in high-current protection circuits.

The gate threshold voltage (2.3–3.9 V) ensures reliable turn-on with standard 3.3 V/5 V logic drivers, while the gate plateau voltage of 6.4 V supports stable Miller region control during hard-switching. Integrated body diode exhibits trr = 58–116 ns and Qrr = 103–206 nC, enabling efficient synchronous rectification in DC-DC stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Maximum blocking voltage for 48 V and 60 V bus systems with safety margin
RDS(on) max1.7 mΩ at VGS = 10 V, ID = 150 A - Enables <1 W conduction loss at 300 A in e-fuse current sensing
ID cont321 A at TC = 25 °C - Supports high-current backplane and server power rail protection
EAS775 mJ - Withstands single-pulse inductive energy without failure in hot-swap insertion
RthJC0.4 °C/W - Allows >300 W power dissipation with moderate heatsinking in TOLL package
Qg total165–206 nC - Determines gate driver strength requirement for <50 ns switching transitions
trr58–116 ns - Limits reverse recovery loss in bidirectional current paths

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, exposed drain tab for low-inductance, high-current PCB connection and thermal conduction.

Pin/TerminalCircuit RoleDesign Meaning
Drain TabMain current path and thermal interfaceDirectly soldered to large copper pour; carries full load current and dissipates heat to PCB
Gate (Pin 1)Control terminalReceives gate drive signal; requires low-impedance routing to minimize ringing in linear mode
Source (Pins 2–8)Reference node and return pathParallel pins reduce source inductance and improve current sharing in high-di/dt applications

Key Features

FeatureDesign Value
Linear-mode SOA optimizationExtended safe operating area up to 10 ms pulse width enables reliable current limiting in hot-swap ICs
100% avalanche ratedGuaranteed single-pulse avalanche capability (EAS = 775 mJ) eliminates need for external snubbers
TOLL package thermal performanceRthJC = 0.4 °C/W supports >300 W continuous power dissipation with minimal heatsink
Low gate charge asymmetryQgd/Qgs ≈ 0.32 enables precise Miller plateau control for soft turn-off in e-fuse fault response
Halogen-free & RoHS compliantMeets IEC61249-2-21 and JEDEC industrial qualification standards for long-life reliability

Applications

Server Hot-Swap ControllersIndustrial DC Power Distribution

Use Scenario: Insertion of PCIe add-in cards or storage modules into live 48 V backplanes.

IC Role / Device Role / Timing Role: Primary current-limiting element in analog hot-swap controller IC feedback loop, operating in linear mode during inrush.

Use Value: 1.7 mΩ RDS(on) minimizes voltage drop and self-heating during 200–300 A inrush, while SOA supports 10 ms overload without thermal runaway.

Use Scenario: Overcurrent protection for 60 V battery-fed motor drives and PLC I/O modules.

IC Role / Device Role / Timing Role: High-side e-fuse switch controlling main power rail, responding to fault signals within microseconds.

Use Value: 775 mJ EAS withstands inductive kickback from solenoid loads; 1284 A pulsed rating handles short-circuit transients before upstream breakers trip.

Telecom Rectifier ModulesEV Charging Station DC Bus Protection

Use Scenario: OR-ing and reverse-current blocking in redundant 54 V telecom rectifiers.

IC Role / Device Role / Timing Role: Synchronous rectifier and reverse-battery protection switch in active OR-ing controllers.

Use Value: Low Qrr (103–206 nC) and fast trr (58–116 ns) reduce body diode conduction loss and switching spikes during load-sharing transitions.

Use Scenario: DC link protection between AC/DC front-end and DC/DC isolation stage in 1000 V EV chargers.

IC Role / Device Role / Timing Role: High-voltage, high-current e-fuse in secondary-side 400–800 V distribution network.

Use Value: 100 V VDS rating with 20 % derating margin supports 800 V transient clamping; TOLL package enables compact, low-inductance layout critical for fast fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current linear-mode MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB180N10N5L3XTMA1Same OptiMOS™ 5 platform, but in TO-leadless (PG-TO263-7) package; RDS(on) = 1.8 mΩ; RthJC = 0.55 °C/WHigher thermal resistance limits peak power handling in space-constrained layoutsSelect when TO-263 footprint compatibility is required and thermal margin allows 0.15 °C/W penalty
STL220N10F7100 V, 2.2 mΩ, 220 A, in TOLL; lower current rating and higher RDS(on); no published EAS valueLacks documented avalanche ruggedness and SOA validation for linear-mode stressAcceptable only in non-critical, low-energy e-fuse roles where fault energy is externally limited

Compared with IPB180N10N5L3XTMA1 and STL220N10F7, IPT017N10NM5LF2ATMA1 offers the lowest RDS(on), highest current rating, best thermal resistance, and fully qualified avalanche performance-making it the preferred choice for mission-critical hot-swap and high-energy e-fuse designs.

Availability

IPT017N10NM5LF2ATMA1 is available at Aetrix Electronics and suitable for server hot-swap controllers, industrial DC power distribution units, and EV charging station DC bus protection requiring stable component supply and long-term lifecycle support.

Supply support for IPT017N10NM5LF2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 Linear FET 2 product line, engineered specifically for high-reliability linear-mode operation in e-fuse, hot-swap, and precision current-limiting applications.

FAQ

What is the maximum continuous drain current at TC = 100 °C?

The maximum continuous drain current is 227 A at case temperature TC = 100 °C, as specified in Table 2 of the datasheet. This de-rating reflects thermal limitations of the TOLL package under sustained high-power operation and must be applied in thermal design calculations for ambient temperatures above 25 °C.

Is IPT017N10NM5LF2ATMA1 suitable for synchronous rectification?

Yes-it supports synchronous rectification via its integrated body diode, which has trr = 58–116 ns and Qrr = 103–206 nC at 100 A. However, its primary design focus is linear-mode operation; for high-frequency SR, dedicated low-Qrr devices may offer better efficiency.

Does this MOSFET require a negative gate-source voltage for safe turn-off?

No-gate-source voltage range is −20 V to +20 V, but normal operation uses 0 V to +10 V. A negative bias is not required for turn-off; however, applying −5 V can improve noise immunity in high-dV/dt environments typical of e-fuse fault interruption.

How does the TOLL package compare to TO-263 in thermal performance?

The TOLL (PG-HSOF-8) package achieves RthJC = 0.4 °C/W versus ~0.55 °C/W for comparable TO-263 variants. This 0.15 °C/W improvement enables ~25 % higher continuous power dissipation at the same junction temperature, critical for compact hot-swap module designs.

IPT017N10NM5LF2ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
8-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
32A (Ta), 321A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V, 15V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 150A, 15V
Vgs(th) (Max) @ Id:
3.9V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:
206 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
17000 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOF-8-1

IPT017N10NM5LF2ATMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPT017N10NM5LF2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPT017N10NM5LF2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT017N10NM5LF2ATMA1 is usually 5 days.

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IPT017N10NM5LF2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IPT017N10NM5LF2ATMA1?

For technical support, including IPT017N10NM5LF2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT017N10NM5LF2ATMA1 requirements.

6.How does Aetrix verify that IPT017N10NM5LF2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT017N10NM5LF2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT017N10NM5LF2ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT017N10NM5LF2ATMA1?

All IPT017N10NM5LF2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT017N10NM5LF2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT017N10NM5LF2ATMA1 part is unused and in its original packaging.

Return procedure for IPT017N10NM5LF2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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