Infineon Technologies IPT019N08N5ATMA1

Overview

IPT019N08N5ATMA1 from Infineon Technologies is an N-channel 80 V OptiMOSTM 5 power MOSFET in PG-HSOF-8 package, featuring 1.9 mΩ max R_DS(on), 247 A continuous drain current, and 101 nC total gate charge. It delivers high-efficiency synchronous rectification and high-frequency switching in DC-DC converters and motor drives.

For engineers reviewing the IPT019N08N5ATMA1 datasheet, IPT019N08N5ATMA1 pinout, IPT019N08N5ATMA1 application, or IPT019N08N5ATMA1 equivalent, key selection criteria include low R_DS(on) × Q_G figure-of-merit, 100% avalanche ruggedness, thermal resistance of 0.4 °C/W (junction-to-case), and HSOF-8 drain-tab layout for high-current PCB mounting.

Technical Context

This device uses trench-based silicon technology optimized for low conduction and switching losses. Its gate threshold voltage (2.2–3.8 V) enables standard 10 V gate drive compatibility while maintaining robust noise immunity. The integrated body diode supports synchronous FET operation with 46–92 ns reverse recovery time and 122–244 nC Q_rr.

The HSOF-8 package features a thermally enhanced drain-exposed tab and 7-source pins plus 1-gate pin, enabling high-current handling and low-inductance source return paths. Thermal performance is validated to JEDEC industrial standards with T_j up to 175 °C and R_thJC = 0.4 °C/W typical.

Key Specifications

Pinout & Package

PG-HSOF-8 package with exposed drain tab on underside for thermal and electrical connection; 8-pin surface-mount outline with 1 gate pin and 7 parallel source terminals for low-inductance, high-current return path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with IPB019N08N5, IPT019N08N5ATMA1 offers lower thermal resistance and superior PCB current handling via HSOF-8; versus IRL1404ZPBF, it provides 2.5× lower R_DS(on), full 80 V rating, and guaranteed avalanche ruggedness-critical for modern high-power density systems.

Availability

IPT019N08N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPT019N08N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 5 family-engineered for high-efficiency, high-current power conversion in datacenter, industrial, and transportation applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD22-A108 for industrial applications. Continuous operation at this limit requires thermal design ensuring case temperature remains ≤125 °C, given R_thJC = 0.4 °C/W and P_tot ≤231 W at T_C = 25 °C.

Does IPT019N08N5ATMA1 support gate drive with 5 V logic?

No-it is a normal-level MOSFET with V_GS(th) ranging from 2.2 V to 3.8 V, but full enhancement (R_DS(on) ≤2.2 mΩ) requires V_GS ≥10 V. At 5 V, R_DS(on) rises above 5 mΩ, increasing conduction loss significantly; 10 V gate drive is mandatory for rated performance.

How is the drain tab electrically isolated during PCB layout?

The drain tab is electrically connected to the MOSFET's drain terminal and must be soldered directly to a dedicated PCB copper pour tied to the high-side DC bus. No isolation is required or possible-the tab is not insulated; thermal interface material is unnecessary if soldered properly to a 6 cm² or larger copper area.

Is the body diode suitable for freewheeling in hard-switched topologies?

Yes-the integrated body diode is characterized with t_rr = 46–92 ns and Q_rr = 122–244 nC at 100 A, making it viable for freewheeling in hard-switched converters below 200 kHz. However, for best efficiency, use as a synchronous rectifier with active gate control rather than relying solely on body diode conduction.