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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT020N13NM6ATMA1

Name: IPT020N13NM6ATMA1
Brand: Infineon Technologies
SKU: IPT020N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT020N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPT020N13NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPT020N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-current, high-efficiency motor drives and battery-powered systems. It delivers 135 V V_DS, 2.0 mΩ max R_DS(on) at V_GS = 10 V, 297 A continuous drain current (T_C = 25 °C), and 154 nC reverse recovery charge (Q_rr) under 500 A/µs di/dt - enabling fast switching with low conduction and switching losses in half-bridge and synchronous rectifier topologies.

For engineers reviewing the IPT020N13NM6ATMA1 datasheet, IPT020N13NM6ATMA1 pinout, IPT020N13NM6ATMA1 application, or IPT020N13NM6ATMA1 equivalent, key selection criteria include its PG-HDSOP-16 package thermal performance (R_thJC = 0.4 °C/W), 175 °C rated junction temperature, and gate charge profile (Q_g = 159 nC) for gate driver sizing in high-frequency power conversion.

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM) and minimized Q_rr. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) supports standard 10 V gate drive while maintaining robust noise immunity.

The integrated body diode exhibits low forward voltage (V_SD = 0.87 V typ. at 142 A, T_j = 25 °C) and tightly controlled trr (36–72 ns) and Q_rr (154–308 nC), making it suitable for synchronous rectification and hard-switched ZVS/ZCS resonant converters where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Maximum blocking voltage for 12–48 V battery systems with 2× bus margin.
R_DS(on), max	2.0 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 70 A DC, critical for thermal management in compact inverters.
I_D, cont	297 A at T_C = 25 °C - Supports high-power BLDC motor phases without parallel devices in industrial tools.
Q_g	159 nC - Determines gate driver peak current requirement (~2 A for 80 ns turn-on with 1.6 Ω external resistor).
Q_rr	154 nC at 500 A/µs - Reduces switching loss and voltage overshoot during diode commutation in synchronous buck stages.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient.
R_thJC	0.4 °C/W - Enables direct heatsink mounting via exposed drain tab (Pins 9–16 + Tab) for efficient thermal path.

Pinout & Package

Package: PG-HDSOP-16 - thermally enhanced 16-pin HDSOP with exposed drain pad (Tab) and dual-source/gate terminal layout for low-inductance PCB routing and high-current capability.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–7	Source	Low-inductance parallel source connection; ties to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 8	Gate	Single-point gate input; requires Kelvin connection for accurate gate drive referencing in high-side configurations.
Pins 9–16 + Tab	Drain	Primary power output and thermal interface; Tab must be soldered to large copper area for R_thJA ≤ 40 °C/W performance.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	318 mΩ·nC - Enables >98% efficiency in 10–50 kHz motor drive inverters with reduced gate drive power.
100% avalanche tested	Rated for single-pulse EAS = 832 mJ - Ensures ruggedness against inductive load transients without external snubbers.
Optimized body diode Q_rr	154 nC at 500 A/µs - Lowers diode recovery loss by >40% vs. legacy MOSFETs, reducing heat sink size in synchronous rectifiers.
MOSFET-only lead plating	Pb-free, halogen-free per IEC61249-2-21 - Complies with IPC-J-STD-020 MSL 1 for unlimited floor life and reflow compatibility.

Applications

Power Tool Motor Inverter

Server PSU Synchronous Rectifier

Use Scenario: 18–40 V cordless power tool with 3-phase BLDC motor and 20–30 kHz PWM control.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; handles 250 A peak phase current with <1.5 V saturation.

Use Value: 2.0 mΩ R_DS(on) reduces conduction loss by 35% vs. 3.2 mΩ alternatives, extending battery runtime by 8–12% at full load.

Use Scenario: 12 V output stage of 3 kW server PSU using synchronous rectification with 100–200 kHz switching.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes; conducts 297 A DC with low V_SD.

Use Value: 0.87 V V_SD and 154 nC Q_rr cut diode conduction and recovery losses by 22% versus 3 mΩ competitors, improving 12 V rail efficiency from 95.1% to 96.4%.

Industrial HVAC Fan Driver

Battery Energy Storage System (BESS) BMS Protection

Use Scenario: 48 V DC-fed HVAC blower with field-oriented control and thermal cycling up to 105 °C ambient.

IC Role / Device Role / Timing Role: High-current half-bridge switch; operates continuously at 175 °C junction temperature with derated ID.

Use Value: 175 °C T_j rating eliminates need for active cooling in sealed fan housings, reducing system cost and failure points.

Use Scenario: Bidirectional contactor replacement in 48–60 V BESS string protection circuits requiring fast fault isolation.

IC Role / Device Role / Timing Role: Solid-state main disconnect switch; blocks 135 V fault voltage and interrupts 300 A short-circuit current within 10 µs.

Use Value: 832 mJ EAS rating enables reliable single-pulse fault clearing without destruction, supporting UL 1973 compliance for energy storage safety.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB020N13N5	Same V_DS (135 V), but higher R_DS(on) (2.3 mΩ) and larger PG-HSOF-8 package with no exposed drain tab.	Limited to lower-current (<200 A) applications due to higher R_DS(on) and inferior thermal resistance (R_thJC = 0.7 °C/W).	Select when board space is constrained and thermal budget allows ≥0.5 W higher conduction loss.
STL220N10F7	Lower V_DS (100 V), identical R_DS(on) (2.0 mΩ), but TO-220FP package with higher R_thJC (1.2 °C/W) and no Q_rr optimization.	Suitable only for 24–48 V systems; lacks low-Q_rr diode needed for high-frequency synchronous rectification.	Choose for cost-sensitive industrial controls where 100 V rating suffices and switching frequency remains <50 kHz.

Compared with IPB020N13N5 and STL220N10F7, IPT020N13NM6ATMA1 uniquely combines 135 V rating, 2.0 mΩ R_DS(on), ultra-low Q_rr, and PG-HDSOP-16 thermal performance - making it the only option qualified for 297 A continuous operation in compact, high-efficiency motor drives and server PSUs.

Availability

IPT020N13NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and battery energy storage systems requiring stable component supply across multi-year production cycles.

Supply support for IPT020N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-current power conversion in battery-powered tools, industrial drives, and datacenter power supplies where low R_DS(on), low Q_rr, and rugged thermal design are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPT020N13NM6ATMA1 supports 210 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This value reflects thermal derating from the 297 A rating at 25 °C case temperature and must be applied when heatsink design limits case temperature to 100 °C.

Is the PG-HDSOP-16 package compatible with standard reflow profiles?

Yes - the device is MSL 1 classified per J-STD-020 and supports standard Pb-free reflow profiles with peak temperature up to 260 °C. The exposed drain tab requires full-solder coverage to a minimum 6 cm² copper area on the PCB to achieve rated thermal performance and avoid voiding during reflow.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device has a normal-level gate threshold (V_GS(th) = 2.5–3.5 V) and is fully enhanced at 0 V gate-source bias. Turn-off is achieved with 0 V gate drive; applying negative voltage is unnecessary and not required for safe operation in typical half-bridge or low-side configurations.

How is the reverse recovery charge (Q_rr) measured and why does it matter?

Q_rr is measured at V_R = 68 V, I_F = 71 A, and di_F/dt = 500 A/µs per Table 7. It quantifies stored charge in the body diode during reverse recovery; lower Q_rr directly reduces switching loss, voltage overshoot, and EMI in synchronous rectifier and hard-switched topologies - critical for achieving >96% efficiency in modern PSUs.

IPT020N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPT020N13NM6ATMA1 FAQ

1.How can I place an order for IPT020N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT020N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT020N13NM6ATMA1 reliable?

The price and inventory of IPT020N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT020N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT020N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT020N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT020N13NM6ATMA1?

IPT020N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT020N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT020N13NM6ATMA1?

For technical support, including IPT020N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT020N13NM6ATMA1 requirements.

6.How does Aetrix verify that IPT020N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT020N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT020N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT020N13NM6ATMA1?

All IPT020N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT020N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT020N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPT020N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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