Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT022N10NF2SATMA1

Name: IPT022N10NF2SATMA1
Brand: Infineon Technologies
SKU: IPT022N10NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPT022N10NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT022N10NF2SATMA1.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPT022N10NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TOLL package, rated for 100 V drain-source voltage, 2.25 mΩ maximum R_DS(on) at V_GS = 10 V, and 236 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (103 nC), and integrated Schottky-like body diode with 327 nC Q_rr, optimized for high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IPT022N10NF2SATMA1 datasheet, IPT022N10NF2SATMA1 pinout, IPT022N10NF2SATMA1 application, or IPT022N10NF2SATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for hard-switching efficiency, thermal resistance (R_thJC = 0.6 °C/W), and body diode reverse recovery performance in synchronous rectification.

Technical Context

This device implements a trench-gate, superjunction-based silicon structure enabling ultra-low conduction loss while maintaining robust switching behavior. Its 100 V rating targets 48 V input systems, and the 2.25 mΩ R_DS(on) is specified at 150 A and 10 V gate drive - confirming suitability for high-current, low-voltage power stages.

The MOSFET integrates a fast-recovery body diode (t_rr = 44 ns, Q_rr = 327 nC) and exhibits low output charge (Q_oss = 131 nC), supporting high-frequency operation up to 500 kHz in resonant and hard-switched topologies without excessive switching loss penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V bus systems with ≥2× voltage margin for transients and ringing.
R_DS(on), max	2.25 mΩ at V_GS = 10 V, I_D = 150 A - Enables <1.5 W conduction loss at 150 A, critical for high-current power stages.
I_D, cont	236 A at T_C = 25 °C - Delivers high output current capability in compact TOLL footprint with exposed drain tab.
Q_g	103 nC - Low gate charge enables efficient driving with standard gate drivers (e.g., 1EDN7512B) at >200 kHz.
Q_oss	131 nC - Minimizes turn-on energy loss in hard-switched converters and reduces EMI during voltage transitions.
t_rr / Q_rr	44 ns / 327 nC - Fast, soft-recovery body diode supports synchronous rectification and ZVS-assisted topologies.
R_thJC	0.6 °C/W - Enables high-power dissipation (>200 W) with minimal junction-to-case temperature rise under forced cooling.

Pinout & Package

Package: PG-HSOF-8 (TOLL), thermally enhanced surface-mount package with exposed drain copper tab on bottom side for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (bottom)	Main current path (high-side or low-side switch node)	Primary thermal path; must be soldered to PCB copper pour or heatsink for R_thJC = 0.6 °C/W performance.
Pin 1	Gate	High-impedance control terminal; requires low-inductance gate loop layout to minimize oscillation during fast switching.
Pins 2–8	Source	Parallel-source configuration reduces source inductance and improves current sharing across internal die segments.

Key Features

Feature	Design Value
StrongIRFET™ 2 technology	Optimized trench-superjunction architecture delivering 2.25 mΩ R_DS(on) in TOLL package - 30% lower than prior-gen equivalents at same voltage class.
100% UIS-tested	Guarantees single-pulse avalanche energy of 150 mJ - ensures robustness against inductive load switching faults without derating.
Low Q_gd/Q_g ratio	21 nC / 103 nC = 0.20 - Improves Miller immunity and enables stable operation with moderate gate resistors in high-dV/dt environments.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 standards - qualified for automotive and industrial reflow profiles without reliability risk.

Applications

Server VRM Power Stage

Industrial Motor Inverter

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage (0.8–1.2 V @ >300 A).

IC Role / Device Role: Synchronous high-side switch in multiphase interleaved topology.

Use Value: 2.25 mΩ R_DS(on) and 0.6 °C/W R_thJC enable >95% efficiency at full load while maintaining <105 °C junction temperature with passive heatsinking.

Use Scenario: 3-phase inverter stage for 5–10 kW PMSM drives in CNC and robotics.

IC Role / Device Role: Low-side switching element with integrated body diode conducting freewheeling current.

Use Value: 44 ns t_rr and 327 nC Q_rr reduce commutation losses and diode-induced voltage spikes, improving EMC and MOSFET reliability.

Telecom DC-DC Brick

Onboard Charger (OBC) DC-Link Switch

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in 1U telecom shelf.

IC Role / Device Role: Primary-side switch in phase-shifted full-bridge topology operating at 200–300 kHz.

Use Value: 131 nC Q_oss minimizes turn-on loss during ZVS transitions, directly improving light-load efficiency and reducing transformer stress.

Use Scenario: Bidirectional DC-link switch in 6.6 kW OBC handling AC/DC and DC/DC modes.

IC Role / Device Role: Unidirectional high-current switch controlling battery-side connection during charging cycles.

Use Value: 236 A I_D rating and 150 mJ E_AS withstand capability ensure safe interruption of fault currents up to 1000 A peak in ISO 6469-3 compliant systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB021N10N5ATMA1	R_DS(on) = 2.1 mΩ (lower), but Q_g = 115 nC (higher); same TOLL package and 100 V rating.	Better conduction loss, but higher gate drive loss and slightly slower switching due to increased C_iss.	Prefer when thermal budget dominates over switching frequency; avoid above 300 kHz due to elevated Q_g.
IXTH30N10L2	TO-247-3L package; R_DS(on) = 3.2 mΩ; Q_g = 85 nC; no integrated fast diode (t_rr > 100 ns).	Larger footprint, higher R_DS(on), but lower gate charge and proven field reliability in legacy industrial inverters.	Select only when board space allows TO-247 and system prioritizes gate drive simplicity over conduction loss.

Compared with IPB021N10N5ATMA1 and IXTH30N10L2, IPT022N10NF2SATMA1 offers the optimal balance of ultra-low R_DS(on), moderate Q_g, and fast body diode recovery - making it the preferred choice for space-constrained, high-frequency, high-current applications where thermal management is critical.

Availability

IPT022N10NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, telecom DC-DC bricks, and onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPT022N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the StrongIRFET™ 2 family - engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and e-mobility applications where low R_DS(on) and thermal performance are decisive.

FAQ

What is the maximum recommended gate voltage for reliable operation?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for full R_DS(on) specification. Operating at 12–15 V provides margin against Miller-induced turn-on but increases gate driver stress and Q_g-related losses. Gate oxide reliability is validated up to 20 V per JEDEC JESD22-A115.

Can IPT022N10NF2SATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing. Parallel operation requires matched gate drive loops, symmetrical PCB layout, and shared source Kelvin connections. Derating to 90% of total rated current per device is recommended for thermal margin.

Is the body diode suitable for synchronous rectification?

Yes - the body diode has t_rr = 44 ns and Q_rr = 327 nC at 100 A, with soft recovery characteristics confirmed in Diagram 12. It supports synchronous rectification in LLC and phase-shifted full-bridge topologies up to 300 kHz, though external Schottky diodes may be preferred above that frequency.

What is the lead time and minimum order quantity at Aetrix Electronics?

Aetrix Electronics maintains active inventory of IPT022N10NF2SATMA1 with standard lead time of 2–4 weeks for quantities ≥500 pcs. MOQ is 250 units for standard distribution; blanket orders with scheduled releases qualify for priority allocation and extended payment terms.

IPT022N10NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 236A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.25mOhm @ 150A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 169µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-10

IPT022N10NF2SATMA1 FAQ

1.How can I place an order for IPT022N10NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT022N10NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT022N10NF2SATMA1 reliable?

The price and inventory of IPT022N10NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT022N10NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPT022N10NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT022N10NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT022N10NF2SATMA1?

IPT022N10NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT022N10NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT022N10NF2SATMA1?

For technical support, including IPT022N10NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT022N10NF2SATMA1 requirements.

6.How does Aetrix verify that IPT022N10NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT022N10NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT022N10NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPT022N10NF2SATMA1?

All IPT022N10NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT022N10NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT022N10NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPT022N10NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …