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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT023N10NM5LF2ATMA1

Name: IPT023N10NM5LF2ATMA1
Brand: Infineon Technologies
SKU: IPT023N10NM5LF2ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT023N10NM5LF2ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT023N10NM5LF2ATMA1.pdf

Description:: IPT023N10NM5LF2ATMA1

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Product details

Overview

IPT023N10NM5LF2ATMA1 from Infineon is a 100 V, 2.3 mΩ N-channel OptiMOS™ 5 Linear FET in PG-HSOF-8 (TOLL) package, optimized for precision current control in high-power linear-mode applications. It delivers 243 A continuous drain current at T_C = 25 °C, features 100% avalanche-tested ruggedness, tight V_GS(th) spread (2.75–3.45 V), and wide SOA for reliable hot-swap and e-fuse operation.

For engineers reviewing the IPT023N10NM5LF2ATMA1 datasheet, IPT023N10NM5LF2ATMA1 pinout, IPT023N10NM5LF2ATMA1 application, or IPT023N10NM5LF2ATMA1 equivalent, key selection criteria include R_DS(on) stability under linear bias, thermal resistance (R_thJC = 0.5 °C/W), gate charge profile (Q_g = 115–144 nC), and safe operating area robustness at pulse durations from 1 µs to DC.

Technical Context

This device belongs to Infineon's OptiMOS™ 5 Linear FET 2 family, engineered specifically for extended linear-mode operation-unlike standard switching MOSFETs. Its optimized cell layout and trench structure reduce thermal runaway risk, enabling stable current regulation at V_DS up to 100 V and junction temperatures up to 175 °C.

It supports precise analog control via low transconductance (g_fs = 55–110 S) and tightly distributed gate threshold voltage. The integrated body diode exhibits t_rr = 57–114 ns and Q_rr = 81–162 nC, making it suitable for synchronous rectification and bidirectional current paths in protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for industrial-grade overvoltage tolerance in battery protection and hot-swap rails.
R_DS(on) max	2.3 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <100 mV conduction drop at 43 A, critical for low-loss current sensing and e-fuse accuracy.
I_D cont	243 A @ T_C = 25 °C - Supports high-current load switching with minimal heatsink requirements due to R_thJC = 0.5 °C/W.
SOA (10 ms)	100 V / 180 A - Validated linear-mode capability at 10 ms pulse, essential for inrush limiting and fault hold-off in server PSUs.
Q_g total	115–144 nC - Determines gate drive power and switching loss during soft-start or active current limiting transitions.
V_GS(th)	2.75–3.45 V - Tight distribution enables consistent turn-on across parallel devices in current-sharing configurations.
E_AS	557 mJ - Single-pulse avalanche energy rating ensures survivability during transient overcurrent events without derating.

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, exposed-drain-tab design for enhanced thermal performance and high-current PCB routing. Drain tab electrically connected to pins 1–8 internal source connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main current path (high-side or low-side switch node)	Direct thermal and electrical interface to PCB copper pour; handles >240 A continuous with proper layout.
Pin 1	Gate	Control input requiring 10 V drive for full enhancement; gate resistance R_G = 1.2–1.8 Ω limits ringing.
Pins 2–8	Source	Common return path for load current; paralleled pins reduce source inductance and improve SOA margin.

Key Features

Feature	Design Value
Linear-mode SOA optimization	Validated 100 V / 180 A at 10 ms pulse-enables reliable operation beyond switching MOSFET limits in e-fuse ICs.
Tight V_GS(th) distribution	±0.35 V tolerance (2.75–3.45 V)-reduces mismatch in multi-device current-sharing arrays without external trimming.
100% avalanche tested	Each unit subjected to E_AS = 557 mJ stress-guarantees ruggedness in unclamped inductive switching and fault recovery.
Low R_thJC	0.5 °C/W junction-to-case-allows >300 W power dissipation with modest heatsinking, critical for linear regulator emulation.
Halogen-free & RoHS	Compliant with IEC61249-2-21 and JEDEC J-STD-020-meets industrial environmental and reflow requirements.

Applications

Hot-Swap Controllers

Battery Protection ICs

Use Scenario: In-line insertion of server blades into live backplanes with controlled inrush current.

IC Role / Device Role / Timing Role: High-side linear pass element regulating ramp-up dv/dt and limiting peak surge to <50 A.

Use Value: SOA-rated 100 V / 180 A at 10 ms enables 500 ms soft-start without thermal shutdown, eliminating need for auxiliary current-limiting resistors.

Use Scenario: Primary overcurrent and short-circuit protection in 48 V Li-ion battery packs for datacenter UPS.

IC Role / Device Role / Timing Role: Bidirectional e-fuse switch with fast trip (<100 ns response to 5× overcurrent) and reverse diode conduction.

Use Value: Integrated body diode with t_rr = 57–114 ns supports bidirectional current flow during cell balancing, reducing external component count by 2.

Programmable Current Sources

Industrial Motor Drive Braking

Use Scenario: Precision 0–200 A current source for semiconductor test equipment calibration stages.

IC Role / Device Role / Timing Role: Linear-mode pass transistor controlled by op-amp feedback loop with V_GS modulation.

Use Value: Low g_fs (55–110 S) and tight V_GS(th) enable sub-1% current regulation error across 0–100 °C ambient range.

Use Scenario: Dynamic braking in servo drives where motor back-EMF must be dissipated as heat during deceleration.

IC Role / Device Role / Timing Role: Low-side dissipative brake switch activated on command, handling 150 A pulses for 500 ms.

Use Value: R_DS(on) = 2.3 mΩ ensures <50 W conduction loss at 150 A, while R_thJC = 0.5 °C/W prevents thermal runaway during repeated braking cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar linear FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB023N10N5	Same R_DS(on) (2.3 mΩ), but TO-263 package; R_thJC = 0.75 °C/W; no TOLL footprint.	Limited to lower-power linear use due to higher thermal resistance; unsuitable for >150 A continuous SOA.	Select when legacy TO-263 layout exists and peak current <150 A.
IRFP4868PBF	Higher R_DS(on) (3.2 mΩ); no SOA characterization; not avalanche rated; TO-247 package.	Not validated for linear-mode operation; requires external snubbers and derating for >50 ms pulses.	Select only for switching-only roles where SOA and avalanche immunity are non-critical.

Compared with IPB023N10N5 and IRFP4868PBF, IPT023N10NM5LF2ATMA1 uniquely combines TOLL-packaged thermal efficiency, full SOA validation, and 100% avalanche testing-making it the only option qualified for industrial hot-swap and programmable current-source designs demanding >100 A linear conduction.

Availability

IPT023N10NM5LF2ATMA1 is available at Aetrix Electronics and suitable for hot-swap controllers, battery protection modules, programmable current sources, and industrial motor braking circuits requiring stable component supply and long-term industrial qualification.

Supply support for IPT023N10NM5LF2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 Linear FET 2 product line, designed explicitly for high-reliability linear-mode operation in e-fuse, hot-swap, and precision current regulation systems-not general-purpose switching.

FAQ

What is the maximum allowable case temperature for continuous linear operation?

The device is rated for T_C ≤ 175 °C per datasheet absolute maximum ratings. For continuous linear use at full 243 A, thermal design must ensure case temperature stays ≤125 °C to maintain SOA integrity and avoid accelerated parametric drift. Derating curves in Diagram 2 confirm 172 A at T_C = 100 °C.

Does IPT023N10NM5LF2ATMA1 support synchronous rectification?

Yes-the integrated body diode has characterized t_rr = 57–114 ns and Q_rr = 81–162 nC, and the device is specified for bidirectional current flow in battery protection ICs. However, it is not optimized as a dedicated sync-FET; gate plateau voltage (6.7 V) and Q_g(sync) = 104 nC reflect linear-mode prioritization.

Can this MOSFET replace a discrete IGBT in motor braking applications?

Yes, for braking currents ≤243 A and V_DS ≤100 V. Unlike IGBTs, it offers zero tail current and faster switching (t_f = 12 ns), eliminating snubber losses. Its SOA rating at 10 ms (100 V / 180 A) exceeds typical IGBT short-circuit withstand, but gate drive must provide ≥10 V with low impedance to avoid linear instability.

Is the PG-HSOF-8 (TOLL) package compatible with standard reflow profiles?

Yes-it is qualified per JEDEC J-STD-020 moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C. The exposed drain tab requires solder paste stencil design with ≥70% aperture ratio and thermal relief for uniform wetting; IPC-7351B land pattern is recommended.

IPT023N10NM5LF2ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 243A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V, 15V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 100A, 15V

Vgs(th) (Max) @ Id:: 3.9V @ 193µA

Gate Charge (Qg) (Max) @ Vgs:: 144 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IPT023N10NM5LF2ATMA1 FAQ

1.How can I place an order for IPT023N10NM5LF2ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT023N10NM5LF2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT023N10NM5LF2ATMA1 reliable?

The price and inventory of IPT023N10NM5LF2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT023N10NM5LF2ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT023N10NM5LF2ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT023N10NM5LF2ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT023N10NM5LF2ATMA1?

IPT023N10NM5LF2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT023N10NM5LF2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT023N10NM5LF2ATMA1?

For technical support, including IPT023N10NM5LF2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT023N10NM5LF2ATMA1 requirements.

6.How does Aetrix verify that IPT023N10NM5LF2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT023N10NM5LF2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT023N10NM5LF2ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT023N10NM5LF2ATMA1?

All IPT023N10NM5LF2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT023N10NM5LF2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT023N10NM5LF2ATMA1 part is unused and in its original packaging.

Return procedure for IPT023N10NM5LF2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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