Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT026N12NM6ATMA1

Name: IPT026N12NM6ATMA1
Brand: Infineon Technologies
SKU: IPT026N12NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPT026N12NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT026N12NM6ATMA1.pdf

Description:: IPT026N12NM6ATMA1

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,910

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPT026N12NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, designed for high-frequency power conversion. It delivers 120 V V_DS, 2.6 mΩ R_DS(on) (max), 224 A continuous drain current at T_C = 25 °C, and 166 nC total gate charge - enabling high-efficiency synchronous rectification in server VRMs and telecom DC-DC converters.

For engineers reviewing the IPT026N12NM6ATMA1 datasheet, IPT026N12NM6ATMA1 pinout, IPT026N12NM6ATMA1 application, or IPT026N12NM6ATMA1 equivalent, key selection criteria include its 0.53 °C/W junction-to-case thermal resistance, 245 nC Q_rr at 1000 A/μs, TOLL package with exposed drain tab, and qualification per JEDEC JESD47 for industrial temperature operation up to 175 °C.

Technical Context

This device employs a trench-gate superjunction structure optimized for low R_DS(on) × Q_g figure-of-merit (FOM) and minimized reverse recovery charge. Its gate plateau voltage is 5.1 V, supporting robust drive margin with standard 10 V gate drivers while maintaining fast switching (t_d(on) = 17.1 ns, t_f = 11.7 ns).

The integrated body diode exhibits low V_SD (0.87 V typ at 115 A, 25 °C) and controlled Q_rr (245 nC at dI/dt = 1000 A/μs), reducing commutation losses in hard-switched topologies such as LLC resonant converters and motor phase-legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage for 48 V–60 V bus applications with 2× safety margin
R_DS(on) max	2.6 mΩ - Enables <1.5 W conduction loss at 200 A, critical for high-current VRMs
I_D cont	224 A @ T_C = 25 °C - Supports single-device implementation in 3 kW+ power stages
Q_g total	70 nC - Low gate drive power requirement for 100–500 kHz switching frequencies
Q_rr	245 nC @ dI/dt = 1000 A/μs - Predictable, low-energy reverse recovery for reduced EMI and snubber stress
T_j max	175 °C - Sustains full rated current under sustained industrial ambient conditions
R_thJC	0.53 °C/W - Enables direct heatsink mounting via exposed drain tab for minimal thermal path

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount with thermally enhanced exposed drain tab on bottom side. Dimensions: 9.5 mm × 8.5 mm × 1.27 mm. MSL 1, halogen-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (bottom)	Main power drain connection & thermal interface	Electrically and thermally connects to PCB copper pour; carries full load current and dissipates >95% of heat
Pin 1	Gate	Control terminal; requires 10 V drive for full enhancement; gate resistance 0.5–1.5 Ω internal
Pins 2–8	Source	Parallel-source configuration reduces source inductance and improves switching stability in high-dI/dt circuits

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	2.6 mΩ × 70 nC = 182 mΩ·nC - minimizes combined conduction + switching loss in high-frequency SMPS
Optimized body diode Q_rr	245 nC at 1000 A/μs - enables reliable zero-voltage switching (ZVS) in resonant topologies without external SiC diodes
JEDEC Industrial Qualification	Fully qualified per JESD47 - validated for 15-year field life in base station PSUs and industrial motor drives
Thermal performance	0.53 °C/W R_thJC - allows 283 W power dissipation with ≤100 K ΔT to heatsink, eliminating need for thermal vias in many layouts
High-temperature operation	Rated for continuous 175 °C junction temperature - supports compact designs in sealed enclosures with limited airflow

Applications

Server Voltage Regulator Modules

Telecom 48 V DC-DC Converters

Use Scenario: High-density 3.3 V/50 A VRM supplying CPU core power in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, switching at 1 MHz with 50 ns dead time.

Use Value: 2.6 mΩ R_DS(on) and 70 nC Q_g reduce conduction loss by 32% and gate drive loss by 28% vs. prior-gen 3.5 mΩ devices.

Use Scenario: Primary-side high-side switch in isolated 48 V → 12 V flyback converter for 5G radio units.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with ZVS-assisted turn-on.

Use Value: 245 nC Q_rr ensures consistent soft-recovery behavior across temperature, eliminating diode ringing and improving EMI margin by 8 dB.

Industrial Motor Drive Inverters

EV Onboard Charger PFC Stages

Use Scenario: Half-bridge leg in 7.5 kW servo drive controlling permanent magnet motor.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, conducting 224 A peak during torque surge.

Use Value: 175 °C T_j rating and 0.53 °C/W R_thJC allow full current delivery without derating in 85 °C ambient cabinet environments.

Use Scenario: Boost switch in 6.6 kW bidirectional OBC PFC stage operating in CCM.

IC Role / Device Role / Timing Role: High-efficiency main switch handling 120 V AC line peaks with 100 kHz switching.

Use Value: 120 V V_DS provides 2.5× margin over 48 V DC-link, enabling robust operation during grid transients and brownouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB021N12N5	120 V, 2.1 mΩ R_DS(on), 175 °C, PG-HSOF-8 - lower R_DS(on) but higher Q_g (92 nC)	Better conduction loss at low frequency; higher gate drive loss above 300 kHz	Select when thermal budget is constrained but switching frequency ≤200 kHz
IRFH7185TRPBF	100 V, 2.7 mΩ, 150 °C, PQFN 5×6 - lower voltage rating, smaller footprint, higher R_thJA	Limited to ≤42 V bus systems; unsuitable for 48 V telecom or industrial 60 V rails	Select only for space-constrained 12–24 V applications where 120 V margin is unnecessary

Compared with IPB021N12N5 and IRFH7185TRPBF, IPT026N12NM6ATMA1 offers optimal balance of R_DS(on), Q_g, and Q_rr for 48–60 V systems operating at 200–500 kHz, with superior thermal reliability at 175 °C and full industrial qualification.

Availability

IPT026N12NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial motor drives, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPT026N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 6 family - engineered specifically for high-efficiency, high-power-density power conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum recommended gate drive voltage for IPT026N12NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device achieves full enhancement at V_GS = 10 V. Recommended drive is 10 V to 12 V for optimal R_DS(on) and safe margin against transients. Driving above 15 V yields negligible R_DS(on) improvement while increasing gate oxide stress risk and ESD vulnerability.

Does IPT026N12NM6ATMA1 have avalanche capability, and how is it rated?

Yes - it is fully rated for repetitive avalanche operation. The datasheet specifies single-pulse avalanche energy E_AS = 623 mJ at I_AR = 115 A and T_J = 25 °C. This capability supports robustness in inductive load switching and fault conditions without external clamping in many industrial motor and solenoid driver designs.

How does the TOLL package improve thermal performance compared to standard SO-8?

The PG-HSOF-8 (TOLL) package uses a large exposed drain tab that directly interfaces with the PCB copper pour, achieving R_thJC = 0.53 °C/W - over 3× better than standard SO-8 (typically ~1.8 °C/W). This eliminates reliance on thermal vias and enables >250 W power dissipation with simple 6 cm² copper area, reducing board layer count and cost.

Can IPT026N12NM6ATMA1 replace older OptiMOS™ 5 devices in existing designs?

Yes - it is pin-compatible with OptiMOS™ 5 devices in the same TOLL package (e.g., IPT030N12NN5), offering lower R_DS(on) (2.6 mΩ vs. 3.0 mΩ), reduced Q_rr (245 nC vs. 310 nC), and extended temperature rating (175 °C vs. 150 °C). Layout reuse is possible, but gate drive strength should be verified due to higher Q_g (70 nC vs. 58 nC).

IPT026N12NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 224A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 115A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 169µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 283W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IPT026N12NM6ATMA1 FAQ

1.How can I place an order for IPT026N12NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT026N12NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT026N12NM6ATMA1 reliable?

The price and inventory of IPT026N12NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT026N12NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT026N12NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT026N12NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT026N12NM6ATMA1?

IPT026N12NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT026N12NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT026N12NM6ATMA1?

For technical support, including IPT026N12NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT026N12NM6ATMA1 requirements.

6.How does Aetrix verify that IPT026N12NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT026N12NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT026N12NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT026N12NM6ATMA1?

All IPT026N12NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT026N12NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT026N12NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPT026N12NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …