Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT054N15N5ATMA1

Name: IPT054N15N5ATMA1
Brand: Infineon Technologies
SKU: IPT054N15N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPT054N15N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT054N15N5ATMA1.pdf

Description:: TRENCH >=100V PG-HSOF-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,600

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPT054N15N5ATMA1 from Infineon Technologies is an N-channel 150 V OptiMOSTM 5 power MOSFET in PG-HSOF-8 (TOLL) package, featuring 5.4 mΩ max R_DS(on), 143 A continuous drain current at T_C = 25 °C, 100% avalanche tested, and optimized for high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IPT054N15N5ATMA1 datasheet, IPT054N15N5ATMA1 pinout, IPT054N15N5ATMA1 application, or IPT054N15N5ATMA1 equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 5.4 mΩ), robust thermal resistance (R_thJC = 0.6 °C/W), high pulsed current capability (572 A), and integrated avalanche ruggedness for switching reliability.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture with optimized cell pitch and charge balancing for reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_G). Its gate threshold voltage (3.0–4.6 V) ensures stable turn-on under industrial supply variations.

The integrated body diode exhibits fast reverse recovery (t_rr = 48–96 ns) and low Q_rr (60.4–121 nC), enabling efficient synchronous rectification and hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 120 V bus systems with 25 % safety margin for transient overvoltage
R_DS(on), max	5.4 mΩ - enables <1.4 W conduction loss at 50 A, reducing heatsink requirements
I_D, cont	143 A @ T_C = 25 °C - delivers high power density in compact TOLL package
Q_G	55 nC - balances switching speed and gate drive loss for 100–500 kHz operation
E_AS	190 mJ - withstands single-pulse inductive energy without failure in motor control
R_thJC	0.6 °C/W - allows direct case-to-heatsink thermal path for >200 W dissipation
Q_OSS	155 nC - minimizes capacitive turn-off loss in high-side configurations

Pinout & Package

PG-HSOF-8 (TOLL) package with exposed drain tab for low-inductance, high-current PCB mounting and enhanced thermal transfer to heatsink. Pin 1 is Gate; Pins 2–8 are Source terminals; Drain connects via bottom tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Power Drain Node	Low-inductance, high-current path to PCB copper pour or heatsink; primary thermal interface
Pin 1	Gate	Control input requiring <55 nC charge for full enhancement; isolated from power paths
Pins 2–8	Source	Parallel low-impedance return path for 143 A; reduces source inductance and improves dV/dt immunity

Key Features

Feature	Design Value
OptiMOSTM 5 process	Enables 5.4 mΩ/150 V rating - 25 % lower R_DS(on) vs prior generation at same voltage class
100 % avalanche tested	Guarantees single-pulse E_AS ≥ 190 mJ - eliminates need for external snubbers in inductive loads
TOLL package thermal performance	R_thJC = 0.6 °C/W - supports >200 W continuous power with minimal heatsink volume
Low Q_gd/Q_g ratio	Q_gd = 11.1–16.7 nC / Q_g = 55–69 nC → ~24 % - improves Miller immunity and hard-switching robustness

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 48–72 V BLDC motor inverters for automated guided vehicles.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 100 A peak phase current with 20 kHz PWM.

Use Value: 5.4 mΩ R_DS(on) and 0.6 °C/W R_thJC enable >98.5 % efficiency at full load without forced air cooling.

Use Scenario: Primary-side switch in isolated 1 kW telecom DC-DC brick (48 V input → 12 V output).

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in active clamp forward topology operating at 300 kHz.

Use Value: Low Q_oss (155 nC) and fast diode t_rr (48 ns) reduce turn-off loss and improve light-load regulation.

Solar MPPT Charge Controller

Server VRM High-Side Switch

Use Scenario: Buck-stage switch in 150 V PV string-connected battery charger for off-grid telecom sites.

IC Role / Device Role / Timing Role: Main power switch managing up to 143 A continuous current with 150 V blocking capability.

Use Value: 150 V V_DS rating accommodates PV open-circuit voltages up to 120 V with margin; avalanche ruggedness handles line transients.

Use Scenario: High-side FET in multiphase 48 V → 0.8 V VRM for AI accelerator cards.

IC Role / Device Role / Timing Role: Fast-switching power stage element operating at 1 MHz with tight dead-time control.

Use Value: Low Q_g (55 nC) and controlled V_GS(th) (3.0–4.6 V) ensure precise gate timing and minimal shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB054N15N5	Same die, TO-263-7 package; R_thJC = 0.75 °C/W; higher package inductance	Less suitable for >300 kHz switching due to higher L_DS; preferred where manual soldering or legacy footprint required	Select when board assembly uses wave soldering or requires larger creepage/clearance than TOLL allows
STP140N15F7	150 V, 140 A, R_DS(on) = 5.8 mΩ; Q_G = 62 nC; no 100 % avalanche test data published	Lower thermal performance (R_thJC = 0.9 °C/W); less proven in repetitive avalanche conditions	Consider only if cost sensitivity outweighs need for guaranteed avalanche ruggedness and thermal margin

Compared with IPB054N15N5 and STP140N15F7, IPT054N15N5ATMA1 offers superior thermal resistance (0.6 °C/W), verified avalanche capability (190 mJ), and lower gate charge-making it optimal for high-power-density, high-reliability 150 V switching applications where thermal headroom and transient robustness are critical.

Availability

IPT054N15N5ATMA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and solar MPPT charge controllers requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IPT054N15N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards aligned to JEDEC and AEC-Q200.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-current switching in industrial motor drives, renewable energy systems, and server power supplies where low R_DS(on), avalanche ruggedness, and thermal performance are essential.

FAQ

What is the maximum junction temperature rating for IPT054N15N5ATMA1?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature per IEC 60068-1 climatic category 55/175/56. The absolute maximum T_j is 175 °C, and derating begins above T_C = 25 °C per Figure 2 in the datasheet, with full current capability maintained up to T_C = 100 °C at reduced I_D = 101 A.

Does IPT054N15N5ATMA1 require a gate resistor for safe operation?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. With Q_G = 55 nC and typical gate driver rise/fall times of 10–20 ns, a 1.6 Ω external resistor is validated in the datasheet for 50 A switching at 75 V. Lower values increase EMI risk; higher values slow switching and raise losses.

Can IPT054N15N5ATMA1 be used in parallel configurations?

Yes-the device features positive R_DS(on) temperature coefficient and matched threshold voltage (3.0–4.6 V) across lots, enabling stable current sharing. Layout symmetry, individual gate resistors, and Kelvin source connections are mandatory; parallel operation up to four units is documented in Infineon's AN2017-05 application note.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has t_rr = 48–96 ns and Q_rr = 60–121 nC at 50 A, enabling efficient synchronous rectification up to 500 kHz. However, its V_SD = 0.83–1.0 V at 50 A results in higher conduction loss than an external Schottky; best practice is to use it only where layout constraints prohibit discrete diodes.

IPT054N15N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 143A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 181µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8

IPT054N15N5ATMA1 FAQ

1.How can I place an order for IPT054N15N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT054N15N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT054N15N5ATMA1 reliable?

The price and inventory of IPT054N15N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT054N15N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT054N15N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT054N15N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT054N15N5ATMA1?

IPT054N15N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT054N15N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT054N15N5ATMA1?

For technical support, including IPT054N15N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT054N15N5ATMA1 requirements.

6.How does Aetrix verify that IPT054N15N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT054N15N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT054N15N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT054N15N5ATMA1?

All IPT054N15N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT054N15N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT054N15N5ATMA1 part is unused and in its original packaging.

Return procedure for IPT054N15N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …