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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT063N15N5ATMA1

Name: IPT063N15N5ATMA1
Brand: Infineon Technologies
SKU: IPT063N15N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT063N15N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT063N15N5ATMA1.pdf

Description:: TRENCH >=100V PG-HSOF-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPT063N15N5ATMA1 from Infineon Technologies is a 150 V, N-channel enhancement-mode power MOSFET in PG-HSOF-8 (TOLL) package, featuring 6.3 mΩ max R_DS(on), 122 A continuous drain current, and 100% avalanche tested ruggedness. It serves as a high-efficiency primary-side switch in industrial DC-DC converters, motor drives, and UPS systems requiring low conduction loss and robust thermal performance.

For engineers reviewing the IPT063N15N5ATMA1 datasheet, IPT063N15N5ATMA1 pinout, IPT063N15N5ATMA1 application, or IPT063N15N5ATMA1 equivalent, key selection criteria include R_DS(on) at V_GS = 8 V, Q_g = 47 nC, thermal resistance R_thJC = 0.7 °C/W, and avalanche energy E_AS = 130 mJ - all critical for hard-switched SMPS and high-reliability power stages.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FoM), enabling high-frequency switching up to 500 kHz with minimized gate drive loss. Its 150 V V_DS rating supports 48 V–96 V bus architectures and 120 V DC link applications.

The integrated body diode exhibits fast reverse recovery (t_rr = 63.4 ns typ., Q_rr = 87.8 nC typ.) and low forward voltage (V_SD = 0.84 V typ. at 50 A), making it suitable for synchronous rectification and freewheeling in half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Supports 120 V DC bus operation with 25 % safety margin for transient overvoltage handling
R_DS(on), max	6.3 mΩ at V_GS = 10 V - Enables ≤ 38 W conduction loss at 122 A, reducing heatsink requirements
Q_g	47 nC - Low gate charge allows efficient driving with standard 1-A gate drivers at ≥300 kHz
E_AS	130 mJ - Rated single-pulse avalanche energy ensures reliability during inductive turn-off stress
R_thJC	0.7 °C/W - Enables >200 W power dissipation with modest case cooling, supporting compact PCB layouts
t_rr	63.4 ns typ. - Minimizes diode reverse recovery loss and associated EMI in bridge configurations
V_GS(th)	3.0–4.6 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

Supplied in PG-HSOF-8 (TOLL) package: thermally enhanced surface-mount outline with exposed drain tab on bottom side and 8-pin leadframe. The package delivers superior thermal resistance (R_thJC = 0.7 °C/W) and high-current capability via large copper area for drain connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab (bottom)	Main power drain terminal	Exposed metal pad soldered to PCB copper pour; carries full ID current and provides primary thermal path to board
Pin 1	Gate	High-impedance control input; requires low-inductance gate loop layout to suppress oscillation during fast switching
Pins 2–8	Source	Parallel-source configuration reduces source inductance and improves current sharing across internal die segments

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FoM	297 mΩ·nC - Reduces combined conduction and switching losses by >25 % vs. prior-gen 150 V MOSFETs
100 % avalanche rated	E_AS = 130 mJ - Eliminates need for external snubbers in inductive load switching
Optimized body diode	t_rr = 63.4 ns, Q_rr = 87.8 nC - Low stored charge minimizes cross-conduction loss in synchronous rectifiers
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - Meets industrial and automotive environmental compliance mandates

Applications

Industrial Motor Drives

Telecom DC-DC Converters

Use Scenario: 3-phase inverter stage in 5–15 kW servo drives operating at 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT/MOSFET-based six-pack modules, controlling motor phase current with precise dead-time management.

Use Value: 6.3 mΩ R_DS(on) cuts conduction loss by 40 % vs. 10 mΩ alternatives, directly improving system efficiency from 95.2 % to 96.1 % at full load.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated flyback or active-clamp forward converter for base station power supplies.

IC Role / Device Role / Timing Role: Main power switch handling 100 A peak currents with 500 ns minimum off-time for tight regulation under dynamic load steps.

Use Value: 0.7 °C/W R_thJC enables 122 A operation at TC = 100 °C without forced air, simplifying thermal design in space-constrained telecom rectifiers.

Uninterruptible Power Supplies

Energy Storage Systems

Use Scenario: Bidirectional DC-DC stage in 48 V/51.2 V battery backup systems, switching at 100–200 kHz with synchronous rectification.

IC Role / Device Role / Timing Role: High-efficiency buck-boost switch managing charge/discharge current up to 120 A with minimal voltage drop.

Use Value: Fast body diode (t_rr = 63.4 ns) reduces reverse recovery loss by 65 % compared to standard MOSFETs, lowering junction temperature rise by 12 °C at 100 kHz.

Use Scenario: Isolation barrier switch in modular battery management units interfacing 150 V string voltages with microcontroller supervision circuits.

IC Role / Device Role / Timing Role: High-voltage isolation switch enabling safe cell balancing and fault disconnection under fault conditions.

Use Value: 150 V V_DS rating with 130 mJ E_AS ensures reliable operation during battery short-circuit events without destructive failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N15F7AG	R_DS(on) = 5.5 mΩ (lower), Q_g = 52 nC (higher), R_thJC = 0.85 °C/W (worse)	Higher conduction efficiency but slower switching and reduced thermal headroom	Prefer when conduction loss dominates; avoid in high-frequency or thermally constrained designs
IXTH120N15X4	R_DS(on) = 6.8 mΩ (higher), Q_g = 42 nC (lower), TO-247 package (larger footprint)	Lower gate drive demand but requires larger PCB area and less efficient thermal coupling	Prefer when gate drive strength is limited; avoid when board space or thermal performance is critical

Compared with STL220N15F7AG and IXTH120N15X4, IPT063N15N5ATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and industry-leading R_thJC, making it the preferred choice for compact, high-power-density industrial power stages where thermal management and switching efficiency are jointly constrained.

Availability

IPT063N15N5ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPT063N15N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-reliability industrial power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance in surface-mount packages.

FAQ

Is IPT063N15N5ATMA1 suitable for 48 V automotive applications?

No - while rated for 150 V V_DS, this part is qualified only for industrial temperature range (−55 °C to 175 °C) and lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed operation under load-dump transients. Automotive 48 V systems require AEC-Q101 certified devices such as Infineon's AUIRF7755.

What is the maximum recommended gate resistor for 200 kHz switching?

A 1.6 Ω external gate resistor is validated in the datasheet for 50 A switching at 200 kHz, yielding td(on) = 14.6 ns and tr = 3.7 ns. For higher current or lower EMI, increase to 2.2–3.3 Ω; for faster switching, reduce to 1.0 Ω only if gate driver can source/sink ≥2 A peak without overshoot.

Does the PG-HSOF-8 package require solder paste stencil aperture reduction?

Yes - the exposed drain tab requires 70–80 % solder paste coverage (0.12 mm thick stencil, 0.5 mm × 0.5 mm apertures) to prevent voiding and ensure thermal bond integrity. IPC-7095B guidelines for thermally enhanced SMT packages apply; insufficient paste causes R_thJC degradation beyond 0.7 °C/W.

Can IPT063N15N5ATMA1 replace older IPT015N10N5 in existing designs?

No - although both are OptiMOSTM 5 devices, IPT015N10N5 is a 100 V part with different R_DS(on), Q_g, and thermal characteristics. Substituting a 150 V device into a 100 V design risks overvoltage stress on gate oxide and increased switching loss due to higher capacitance; redesign validation is mandatory.

IPT063N15N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 16.2A (Ta), 122A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 153µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4550 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8

IPT063N15N5ATMA1 FAQ

1.How can I place an order for IPT063N15N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT063N15N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT063N15N5ATMA1 reliable?

The price and inventory of IPT063N15N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT063N15N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT063N15N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT063N15N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT063N15N5ATMA1?

IPT063N15N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT063N15N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT063N15N5ATMA1?

For technical support, including IPT063N15N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT063N15N5ATMA1 requirements.

6.How does Aetrix verify that IPT063N15N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT063N15N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT063N15N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT063N15N5ATMA1?

All IPT063N15N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT063N15N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT063N15N5ATMA1 part is unused and in its original packaging.

Return procedure for IPT063N15N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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