Infineon Technologies IPT60R040S7XTMA1

Overview

IPT60R040S7XTMA1 from Infineon is a 600V, 40mΩ R_DS(on) Superjunction MOSFET in HSOF-8 (TOLL) package with Kelvin Source pin, designed for static switching and high-current line rectification in SMPS, UPS, solar inverters, and solid-state relays. It delivers 207A pulsed drain current, 0.82V body diode forward voltage, and JEDEC-qualified industrial reliability.

For engineers reviewing the IPT60R040S7XTMA1 datasheet, IPT60R040S7XTMA1 pinout, IPT60R040S7XTMA1 application, or IPT60R040S7XTMA1 equivalent, key selection criteria include low conduction loss (40mΩ @ 12V_GS, 13A), high dv/dt ruggedness (20V/ns), Kelvin Source–enabled fast switching, and MSL1-compliant TOLL packaging for high-power thermal management.

Technical Context

This CoolMOS™ S7 device uses charge-compensation superjunction architecture to achieve ultra-low R_DS(on) while maintaining 600V blocking capability and robust avalanche energy rating (159mJ). Its gate threshold voltage (3.5–4.5V) and plateau voltage (5.4V) support standard 12V gate drivers without level-shifting.

The integrated Kelvin Source terminal separates power and signal return paths, reducing gate loop inductance and enabling precise control of turn-on/turn-off timing-critical for paralleling and minimizing switching losses at high current (≥13A DC, 207A pulse).

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, exposed drain tab for thermal and electrical connection, MSL1, lead-free, with visual inspection–friendly gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current switching applications.

Compared with IPW60R041P7XKSA1 and STW62N60M2, IPT60R040S7XTMA1 uniquely combines Kelvin Source topology, TOLL's superior thermal resistance, and lowest R_DS(on) in its class-making it optimal for space-constrained, high-current static switching where thermal management and paralleling stability are critical.

Availability

IPT60R040S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay design, high-power line rectification in telecom/server PSUs, and photovoltaic inverter DC-link switching requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified industrial reliability.

Supply support for IPT60R040S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This device belongs to the CoolMOS™ S7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-efficiency, low-frequency switching applications such as SSRs, circuit breakers, and offline SMPS rectification-prioritizing R_DS(on) minimization and thermal robustness over ultra-high-speed switching.

FAQ

What is the recommended gate resistor placement for IPT60R040S7XTMA1 in parallel configurations?

Per Infineon's design note, the gate resistor must be placed on the Kelvin Source (Pin 2) side-not the gate-to preserve the low-inductance reference path. This prevents oscillation and ensures matched turn-on timing across paralleled devices. Using the main source pins (Pins 3–8) for gate return introduces inductance that degrades switching symmetry and increases EMI risk.

Does IPT60R040S7XTMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 3.5–4.5V and is fully controllable with 0V/12V gate drive. A negative gate voltage is not required for safe turn-off; however, applying –5V can marginally improve dv/dt immunity in noisy high-power environments, though it is not specified in the datasheet as necessary.

Can IPT60R040S7XTMA1 replace a standard 600V N-channel MOSFET in an existing TO-220 design?

No-it uses the surface-mount HSOF-8 (TOLL) package with an exposed drain tab, not TO-220. Direct mechanical replacement is impossible without PCB redesign. Thermal and electrical layout must accommodate the Kelvin Source pin, drain-tab soldering, and gull-wing lead pitch. Electrical substitution is feasible only after full layout and thermal validation.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous drain current (I_D) is limited by junction temperature T_j ≤ 150°C. With R_thJC = 0.51°C/W, the maximum case temperature (T_C) for 13A DC operation is 143°C (T_j = T_C + R_thJC × P_cond). At rated 245W power dissipation, T_C must be held at 25°C-confirming the need for active heatsinking in high-power use cases.