Infineon Technologies IPT60R045CFD7XTMA1

Overview

IPT60R045CFD7XTMA1 from Infineon Technologies is a 600 V, 45 mΩ ultra-fast body diode superjunction MOSFET in PG-HSOF-8 (TOLL) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 153 A pulsed drain current, 79 nC total gate charge, and 1300 A/μs di/dt ruggedness, enabling high-efficiency power conversion in server PSUs and EV charging systems.

For engineers reviewing the IPT60R045CFD7XTMA1 datasheet, IPT60R045CFD7XTMA1 pinout, IPT60R045CFD7XTMA1 application, or IPT60R045CFD7XTMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr = 0.68–1.37 μC), R_DS(on) temperature stability (0.038 Ω @ 25°C, 0.086 Ω @ 150°C), and hard commutation robustness under high di/dt stress.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction architecture with integrated fast body diode, achieving best-in-class Q_rr and reduced gate charge versus prior CFD2 generation. Its dv/dt ruggedness (120 V/ns) and di/dt capability (1300 A/μs) support reliable operation in high-frequency ZVS transitions without external snubbers.

The PG-HSOF-8 (TOLL) package features isolated drain tab and dedicated driver source pin (Pin 2), enabling precise gate loop control and minimizing common-source inductance-critical for maintaining switching speed and reducing oscillation in paralleled configurations.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount with exposed drain tab for enhanced thermal performance and isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R041C7 and STP60N045DM9, IPT60R045CFD7XTMA1 uniquely balances ultra-low Q_rr, Kelvin source architecture, and TOLL package thermal performance-making it the only choice among the three for high-density, high-frequency resonant converters requiring simultaneous efficiency, reliability, and layout simplicity.

Availability

IPT60R045CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPT60R045CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

The CoolMOS™ CFD7 product line targets high-efficiency AC–DC and DC–DC conversion in datacenter, telecom, and EV infrastructure-designed specifically to replace older superjunction platforms in soft-switching topologies without redesigning gate drive or thermal layouts.

FAQ

What is the maximum recommended gate resistor value for IPT60R045CFD7XTMA1 in a phase-shift full-bridge?

The datasheet recommends placing the gate resistor on the Driver Source (Pin 2), not the Gate, to minimize loop inductance. For ZVS operation at 300–500 kHz, typical values range from 2.2 Ω to 5.6 Ω-selected to balance switching speed (dV/dt < 120 V/ns) and gate driver power dissipation. Higher values (>10 Ω) degrade ZVS margin and increase turn-on loss.

Can IPT60R045CFD7XTMA1 be paralleled with identical units without external current-sharing components?

Yes, but only with strict layout symmetry: matched gate trace lengths, individual gate resistors on Driver Source, and balanced source connections to minimize dynamic current imbalance. The Kelvin source and low R_DS(on) tolerance (±15%) support stable parallel operation up to four devices-validated in Infineon's reference design AN2022-05 for 6 kW LLC converters.

Is the body diode in IPT60R045CFD7XTMA1 suitable for synchronous rectification in LLC secondary-side operation?

Yes-the body diode is characterized for t_rr = 132–198 ns and Q_rr = 0.68–1.37 μC at 13.7 A, enabling clean commutation in secondary-side synchronous rectification without external diodes. However, its V_F = 1.0 V at 18 A is higher than discrete SiC Schottky diodes, so efficiency gain is most pronounced at light-to-moderate loads where conduction loss is secondary to switching loss.

Does IPT60R045CFD7XTMA1 require derating when mounted on a 4-layer PCB without forced airflow?

Yes-thermal resistance rises from R_thJC = 0.46 °C/W to R_thJA = 35–45 °C/W depending on copper area. At 100% duty cycle and 25°C ambient, maximum continuous power must be limited to ~110 W (vs. 272 W at T_C = 25°C) to maintain T_j ≤ 150°C. Derating curves are provided in Figure 1 of the datasheet Revision 2.4.