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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT60R055CFD7XTMA1

Name: IPT60R055CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT60R055CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT60R055CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT60R055CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 44A 8HSOF

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Product details

Overview

IPT60R055CFD7XTMA1 from Infineon Technologies is a 600 V, 55 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HSOF-8 (TOLL) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 129 A pulsed drain current, 67 nC total gate charge, and 1300 A/μs di/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPT60R055CFD7XTMA1 datasheet, IPT60R055CFD7XTMA1 pinout, IPT60R055CFD7XTMA1 application, or IPT60R055CFD7XTMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (55 mΩ × 67 nC), best-in-class reverse recovery charge (Q_rr = 0.61–1.22 μC), and validated hard commutation robustness per JEDEC industrial qualification.

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture with an integrated ultra-fast body diode engineered for zero-voltage switching (ZVS) operation. Its reduced Q_g (67 nC typ), low Q_rr, and improved turn-off behavior directly enable lower switching losses in resonant topologies.

The TOLL package provides low thermal resistance (R_thJC = 0.53 °C/W) and high-current capability via exposed drain tab. Pin configuration separates driver source (Pin 2) from power source (Pins 3–8), preventing ground loop errors and supporting stable paralleling when gate resistors are placed at the driver source.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage for primary-side switching in 400 V bus telecom/server PSUs and 800 V EV charger PFC stages.
R_DS(on)	55 mΩ max @ T_j = 25°C - Enables <44 A continuous conduction at 100°C case temperature with minimal conduction loss.
Q_g	67 nC typ - Reduces gate drive power and enables higher-frequency operation in LLC resonant controllers.
Q_rr	0.61–1.22 μC - Minimizes reverse recovery energy loss and EMI generation during hard commutation in ZVS transitions.
di/dt ruggedness	1300 A/μs - Supports reliable operation under fast current transients in high-dV/dt resonant circuits without parasitic turn-on.
P_D	236 W @ T_C = 25°C - Sustains high power density in compact TOLL-packaged designs with direct heatsink mounting.
R_thJC	0.53 °C/W - Enables efficient thermal path from junction to heatsink, critical for >3 kW resonant converter modules.

Pinout & Package

Package: PG-HSOF-8 (TOLL) - thermally enhanced surface-mount package with exposed drain tab for direct heatsink attachment and low-inductance source connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Power Drain Terminal	Exposed copper pad carrying full load current; must be soldered to PCB copper pour or heatsink for thermal and electrical performance.
Pin 1	Gate	Control input; requires low-impedance gate driver due to 67 nC Q_g; sensitive to noise coupling.
Pin 2	Driver Source	Reference node for gate driver IC; isolates gate loop from high di/dt power source paths to prevent false triggering.
Pins 3–8	Power Source	Parallel source terminals carrying main current return path; must be routed with low inductance to minimize voltage spikes.

Key Features

Feature	Design Value
Ultra-fast body diode	Q_rr = 0.61–1.22 μC and t_rr = 122–184 ns - Enables clean ZVS turn-on with minimal reverse recovery loss in LLC half-bridge legs.
Low R_DS(on) × Q_g FOM	55 mΩ × 67 nC = 3.685 Ω·nC - Best-in-class tradeoff between conduction and switching loss for 600 V resonant applications.
Hard commutation ruggedness	1300 A/μs di/dt rating and 120 V/ns dv/dt rating - Ensures reliable operation during non-resonant transients without external snubbers.
JEDEC industrial qualification	Fully qualified per JESD47 - Guarantees long-term reliability in 24/7 server PSU and EV charging environments up to T_j = 150°C.
TOLL package thermal performance	R_thJC = 0.53 °C/W - Delivers >2× thermal efficiency vs. TO-220, enabling smaller heatsinks in space-constrained 3–5 kW modules.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW+ 48 V output LLC resonant DC-DC converter for AI server racks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–700 kHz with ZVS turn-on enabled by ultra-low Q_rr.

Use Value: Reduces switching loss by 22% vs. CFD2 generation, enabling >97% peak efficiency and 20% higher power density.

Use Scenario: Main switch in 48 V telecom rectifier with active clamp forward topology requiring fast body diode recovery.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during active clamp reset and freewheeling phases.

Use Value: Eliminates need for external SiC Schottky anti-parallel diode due to 1300 A/μs di/dt ruggedness and low V_F = 1.0 V.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Secondary-side synchronous rectifier in 11 kW bidirectional OBC LLC stage converting 800 V battery to 400 V HV bus.

IC Role / Device Role / Timing Role: Fast-recovery body diode conducts reverse current during dead-time, enabling ZVS across full load range.

Use Value: Achieves <1.22 μC Q_rr at 125°C, reducing dead-time loss and improving light-load efficiency by 3.1%.

Use Scenario: Half-bridge leg switch in 5 kVA industrial UPS inverter with soft-switched phase-shift control.

IC Role / Device Role / Timing Role: Resonant switch managing high di/dt transitions during zero-current switching (ZCS) commutation.

Use Value: Withstands 1300 A/μs di/dt without oscillation, eliminating need for gate resistors >10 Ω and simplifying gate drive design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPT60R065CFD7	R_DS(on) = 65 mΩ (higher conduction loss), same Q_g and Q_rr specs	Better suited for cost-sensitive 1.5–2 kW telecom rectifiers where thermal margin allows higher R_DS(on)	Select when BOM cost reduction outweighs 8–10% conduction loss increase at full load.
IPW60R055CFD7	TO-247-3L package, identical die but higher R_thJC = 0.75 °C/W and no driver-source pin separation	Preferred for legacy through-hole designs or prototyping where TOLL reflow process is unavailable	Choose only if board assembly constraints prohibit SMD TOLL; expect ~15% lower thermal performance.

Compared with IPT60R065CFD7 and IPW60R055CFD7, IPT60R055CFD7XTMA1 offers the lowest R_DS(on) in SMD form factor with dedicated driver-source isolation-critical for noise-immune gate drive in high-density 3+ kW resonant converters.

Availability

IPT60R055CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high-volume production support.

Supply support for IPT60R055CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CFD7 product line-designed specifically for soft-switching resonant topologies such as LLC and phase-shift full-bridge, balancing ultra-low Q_rr, high di/dt ruggedness, and ease of implementation in high-efficiency power systems.

FAQ

Can IPT60R055CFD7XTMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes, it is a direct drop-in replacement for IPT60R055CFD2 in most cases, offering improved Q_rr (−35%), lower Q_g (−12%), and higher di/dt ruggedness (1300 A/μs vs. 900 A/μs). However, gate drive timing may require minor adjustment due to lower threshold voltage (V_GS(th) = 3.5–4.5 V) and steeper transconductance curve.

What is the purpose of the separate Driver Source (Pin 2) versus Power Source (Pins 3–8)?

Pin 2 provides a dedicated low-noise reference for the gate driver IC, decoupling the gate loop from high-di/dt power return paths. This prevents false turn-on caused by source inductance-induced voltage spikes during switching transitions-critical for stable operation above 300 kHz.

Is the TOLL package compatible with standard reflow profiles?

Yes, it is MSL1 rated and qualified for peak reflow temperatures up to 260°C. The package uses lead-free terminations and meets IPC/JEDEC J-STD-020D moisture sensitivity requirements-no pre-bake needed before assembly.

Does this MOSFET require an external anti-parallel diode in LLC half-bridge configurations?

No. Its integrated ultra-fast body diode (t_rr = 122–184 ns, Q_rr = 0.61–1.22 μC) is fully characterized and qualified for hard commutation, eliminating the need for external SiC or silicon Schottky diodes in typical LLC secondary-side synchronous rectification.

IPT60R055CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 15.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 760µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2721 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 236W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT60R055CFD7XTMA1 FAQ

1.How can I place an order for IPT60R055CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT60R055CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT60R055CFD7XTMA1 reliable?

The price and inventory of IPT60R055CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60R055CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT60R055CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60R055CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT60R055CFD7XTMA1?

IPT60R055CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT60R055CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT60R055CFD7XTMA1?

For technical support, including IPT60R055CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60R055CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT60R055CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT60R055CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60R055CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT60R055CFD7XTMA1?

All IPT60R055CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60R055CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT60R055CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT60R055CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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