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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT60R075CFD7XTMA1

Name: IPT60R075CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT60R075CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT60R075CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT60R075CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 33A 8HSOF

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Product details

Overview

IPT60R075CFD7XTMA1 from Infineon Technologies is a 600 V, 75 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HSOF-8 (TOLL) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 97 A pulsed drain current, 51 nC total gate charge, and 1300 A/μs di/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPT60R075CFD7XTMA1 datasheet, IPT60R075CFD7XTMA1 pinout, IPT60R075CFD7XTMA1 application, or IPT60R075CFD7XTMA1 equivalent, key selection criteria include reverse recovery charge (Q_rr = 0.51–1.02 μC), R_DS(on) temperature stability, gate plateau voltage (5.6 V), and source-sense pin integrity for accurate current sensing in high-frequency ZVS designs.

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture with integrated Kelvin source (Driver Source pin 2) to decouple gate drive loop from power source return, minimizing switching losses and improving dv/dt immunity. Its ultra-low Q_g (51 nC) and best-in-class Q_rr enable precise control of hard commutation events in resonant half-bridge and full-bridge stages.

The internal fast body diode supports high di/dt (1300 A/μs) and exhibits low reverse recovery time (110–165 ns) at 400 V bus voltage, making it suitable for bidirectional energy transfer in LLC synchronous rectification and active clamp circuits without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage compatible with 400 V nominal DC bus + 25% margin in telecom/server PSUs
R_DS(on)	75 mΩ max @ T_j = 25°C - Enables <1.2 W conduction loss at 11.4 A continuous current
Q_g	51 nC - Reduces gate driver power demand and enables >500 kHz operation with standard 1–2 A drivers
Q_rr	0.51–1.02 μC - Minimizes turn-on switching loss and EMI in ZVS transitions
di/dt	1300 A/μs - Supports robust hard commutation in asymmetric half-bridge and active clamp flyback
P_D	186 W @ T_C = 25°C - Allows high-power density thermal design with direct-drain tab cooling
T_j,max	150 °C - Enables operation in sealed industrial enclosures without forced airflow

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, exposed drain tab for enhanced thermal performance and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Exposed copper pad - must be soldered to large PCB copper area for thermal dissipation and low inductance
Pin 1 (Source)	Power source return path	Carries full load current; connects to main ground plane - not interchangeable with Pin 2
Pin 2 (Driver Source)	Kelvin source for gate drive reference	Provides noise-immune gate return path; must connect directly to gate driver ground, not power ground
Pin 3–8 (Source)	Parallel source terminals	Low-inductance parallel paths to reduce source inductance and improve switching consistency
Gate (Pin ?)	Control input	Not explicitly numbered in datasheet diagram but located adjacent to Pin 1; requires 10 V gate drive for full enhancement

Key Features

Feature	Design Value
Ultra-fast body diode	Q_rr = 0.51–1.02 μC and t_rr = 110–165 ns - eliminates need for external SiC Schottky in LLC secondary-side synchronous rectification
Separate Driver Source (Kelvin source)	Pin 2 isolated from power source pins - enables stable gate voltage control under high di/dt, reducing false turn-on risk
Optimized FOM (R_DS(on) × Q_g)	3.8 mΩ·nC - balances conduction and switching loss for 300–700 kHz resonant converter operation
Hard commutation ruggedness	1300 A/μs di/dt rating and 120 V/ns dv/dt immunity - sustains repeated unclamped inductive switching in PFC and motor drives

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW 48 V output phase-shift full-bridge with ZVS operation at 300–500 kHz.

IC Role / Device Role / Timing Role: High-side and low-side primary switch with synchronized gate timing and body-diode-assisted zero-voltage turn-on.

Use Value: Achieves >97% efficiency at full load by minimizing Q_rr-dependent turn-on loss and enabling tight dead-time control.

Use Scenario: 48 V/50 A telecom rectifier using dual LLC resonant topology with digital controller.

IC Role / Device Role / Timing Role: Primary-side power switch managing bidirectional energy flow during resonant tank reversal.

Use Value: Enables 100% duty-cycle capability in asymmetrical LLC modes due to robust di/dt and low reverse recovery dispersion.

EV Onboard Charger

Industrial AC-DC Module

Use Scenario: Bidirectional 11 kW OBC with interleaved PFC + CLLC DC-DC stage operating up to 700 kHz.

IC Role / Device Role / Timing Role: CLLC primary switch handling high-frequency sinusoidal current with body-diode conduction during half-cycle reversal.

Use Value: Delivers 2.8 kW/L power density by sustaining 1300 A/μs commutation without snubbers or gate damping resistors.

Use Scenario: 5 kW industrial AC-DC front-end with active clamp forward and synchronous rectification.

IC Role / Device Role / Timing Role: Active clamp switch managing reset energy recovery and clamping voltage spikes during transformer demagnetization.

Use Value: Eliminates external clamp diode and reduces clamp capacitor size by 40% via low Q_rr and fast diode recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-body-diode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099CFD7	R_DS(on) = 99 mΩ, Q_g = 44 nC, same TOLL package	Lower conduction loss penalty at partial load; higher R_DS(on) increases full-load conduction loss by ~32%	Select when optimizing for light-load efficiency and cost-sensitive 1–2 kW designs
IPP60R099C7XKSA1	TO-220FP package, no Kelvin source, Q_rr = 1.2 μC, R_DS(on) = 99 mΩ	Limited to ≤300 kHz due to higher Q_rr and absence of driver-source isolation	Choose only for legacy through-hole designs where board space and thermal budget allow larger heatsink footprint

Compared with IPW60R099CFD7 and IPP60R099C7XKSA1, IPT60R075CFD7XTMA1 provides the lowest R_DS(on) in SMD format with Kelvin source-critical for high-frequency, high-current ZVS systems requiring minimal gate loop inductance and repeatable turn-off timing.

Availability

IPT60R075CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPT60R075CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification standards aligned to IATF 16949 and ISO 9001.

The CoolMOS™ CFD7 product line was engineered specifically for high-efficiency resonant power conversion, targeting soft-switching topologies where reverse recovery behavior, gate charge, and thermal robustness dominate system-level efficiency and reliability.

FAQ

What is the function of Pin 2 (Driver Source) versus Pin 1 (Source)?

Pin 2 is the Kelvin source terminal dedicated solely to gate driver return, providing a low-noise, low-inductance reference for accurate gate voltage control. Pin 1 carries full power source current and must connect to the main PCB ground plane. Interchanging them causes gate drive instability and potential device failure due to ground bounce coupling into the gate loop.

Can IPT60R075CFD7XTMA1 be paralleled with identical units?

Yes, but only with strict layout symmetry: matched gate resistor placement on the Driver Source (Pin 2), identical trace lengths to all source pins (Pins 1 and 3–8), and shared thermal interface to the drain tab. Parallel operation requires individual gate resistors per device to prevent oscillation, and derating to 80% of total rated current is recommended for thermal margin.

Is this device suitable for hard-switched PFC boost stages?

No-it is not optimized for hard-switched applications. Its ultra-low Q_rr and fast diode come at the expense of reduced avalanche ruggedness (E_AS = 114 mJ) compared to CFD2 or CE series. For continuous hard-switched PFC, Infineon recommends IPW60R041C7 or IPP60R041C7 with higher E_AS and optimized body diode softness.

What is the maximum recommended gate resistor value for 500 kHz operation?

For stable 500 kHz ZVS operation, the gate resistor should be ≤10 Ω when driving from a 2 A peak gate driver. This ensures t_d(on) ≤25 ns and t_r ≤16 ns while maintaining <5% overshoot. Higher values increase switching loss and risk incomplete turn-on during short dead times; lower values (<5 Ω) require careful layout to avoid ringing due to gate loop inductance.

IPT60R075CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 570µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2103 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT60R075CFD7XTMA1 FAQ

1.How can I place an order for IPT60R075CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT60R075CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT60R075CFD7XTMA1 reliable?

The price and inventory of IPT60R075CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60R075CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT60R075CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60R075CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT60R075CFD7XTMA1?

IPT60R075CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT60R075CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT60R075CFD7XTMA1?

For technical support, including IPT60R075CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60R075CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT60R075CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT60R075CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60R075CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT60R075CFD7XTMA1?

All IPT60R075CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60R075CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT60R075CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT60R075CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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