Infineon Technologies IPT60R090CFD7XTMA1

Overview

IPT60R090CFD7XTMA1 from Infineon Technologies is a 600 V, 90 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction power MOSFET in PG-HSOF-8 (TOLL) package, optimized for soft-switching topologies including phase-shift full-bridge (ZVS) and LLC resonant converters. It delivers 79 A pulsed drain current, 42 nC total gate charge, and 1300 A/μs di/dt ruggedness with best-in-class Q_rr of 0.45–0.90 μC, enabling high-efficiency server and EV charging power supplies.

For engineers reviewing the IPT60R090CFD7XTMA1 datasheet, IPT60R090CFD7XTMA1 pinout, IPT60R090CFD7XTMA1 application, or IPT60R090CFD7XTMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, reverse recovery robustness under hard commutation, gate drive compatibility in high-frequency ZVS designs, and thermal performance in compact SMD layouts using the TOLL package's low 0.78 °C/W R_thJC.

Technical Context

This device implements Infineon's CoolMOS™ CFD7 superjunction architecture with integrated fast-recovery body diode, engineered specifically for zero-voltage switching (ZVS) operation. Its reduced Q_g (42 nC), ultra-low Q_rr, and enhanced dv/dt (120 V/ns) and di/dt (1300 A/μs) ruggedness enable reliable operation in resonant half-bridge and full-bridge topologies without external snubbers.

The PG-HSOF-8 (TOLL) package features isolated source and driver-source pins to minimize common-source inductance and improve switching control fidelity. Internal layout separates high-side switching node routing from gate drive return path, supporting stable gate voltage during fast transitions and reducing EMI generation in high-density power stages.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL) - thermally enhanced surface-mount package with exposed drain tab for direct heatsinking and separate source (pins 3–8) and driver-source (pin 2) terminals to reduce gate loop inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R090CFD7 and IPP60R099C7, IPT60R090CFD7XTMA1 provides superior ZVS efficiency in compact SMD layouts due to its TOLL package's lower R_thJC, dedicated driver-source pin, and 45% lower Q_rr-making it the preferred choice for next-gen 300+ kHz resonant power supplies requiring high power density and reliability.

Availability

IPT60R090CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, EV onboard chargers, and industrial motor drive inverters requiring stable component supply, JEDEC-qualified reliability, and high-frequency soft-switching performance.

Supply support for IPT60R090CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ CFD7 product line was designed to address efficiency and reliability gaps in high-frequency resonant converters, targeting soft-switching applications where traditional superjunction MOSFETs suffer from excessive body diode losses and commutation failure.

FAQ

What is the maximum continuous drain current rating for IPT60R090CFD7XTMA1?

The maximum continuous drain current is 28 A at T_C = 25°C and derates to 18 A at T_C = 100°C per the datasheet's maximum ratings table. This rating assumes proper PCB copper area (6 cm²) and heatsinking per the thermal characteristics section; actual usable current depends on layout, ambient temperature, and cooling method.

Why does IPT60R090CFD7XTMA1 have separate source and driver-source pins?

Separate source (pins 3–8) and driver-source (pin 2) terminals minimize common-source inductance in the gate drive loop, preventing gate voltage undershoot/overshoot during fast switching. This isolation improves ZVS reliability and reduces EMI-critical for >300 kHz LLC operation where even nanohenry-level inductance degrades performance.

Can IPT60R090CFD7XTMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes, but with layout and gate drive adjustments: the CFD7's lower Q_g and Q_rr reduce switching loss, yet its faster di/dt requires tighter gate loop control. The TOLL package also mandates revised thermal pad design. Electrical pinout is compatible, but driver-source pin usage must be implemented per Infineon's layout guidelines to avoid instability.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA curve limits continuous operation to ≤40 V and ≤25 A (DC), or ≤200 V and ≤10 A for 10 ms pulses. These boundaries derive from thermal saturation and avalanche energy limits; exceeding them risks thermal runaway or single-pulse avalanche failure, especially under inductive loads without snubbing.