Infineon Technologies IPT60R102G7XTMA1

Overview

IPT60R102G7XTMA1 from Infineon is a 600 V, 102 mΩ silicon carbide–free superjunction MOSFET in the CoolMOS™ G7 generation, featuring Kelvin Source configuration and TOLL (PG-HSOF-8) surface-mount package. It delivers 66 A pulsed drain current, 34 nC total gate charge, and 4 μJ output energy at 400 V - optimized for high-efficiency PFC and LLC resonant converters up to 3 kW in server and telecom power supplies.

For engineers reviewing the IPT60R102G7XTMA1 datasheet, IPT60R102G7XTMA1 pinout, IPT60R102G7XTMA1 application, or IPT60R102G7XTMA1 equivalent, key selection criteria include its 0.888 °C/W junction-to-case thermal resistance, 740 A/μs body diode di/dt capability, Kelvin-source–enabled low parasitic inductance (~1 nH), and JEDEC-qualified industrial reliability.

Technical Context

This device implements Infineon's C7 GOLD CoolMOS™ technology with integrated 4-pin Kelvin Source terminals, separating driver and power source paths to minimize gate loop inductance and suppress switching ringing. Its R_DS(on) × Q_g figure-of-merit is 15% better than prior C7 600 V devices, enabling faster hard- and soft-switching transitions.

The TOLL package provides MSL1 reflow compatibility, Pb-free die attach, grooved leads for visual solder inspection, and a 35–45 °C/W junction-to-ambient rating on a 40 mm × 40 mm FR4 PCB - enabling SMD deployment in high-current topologies previously limited to through-hole packages.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, exposed drain tab, MSL1, Pb-free die attach, grooved leads for optical solder inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099C7 and IPP60R105C7, IPT60R102G7XTMA1 uniquely combines Kelvin Source, TOLL SMD packaging, and C7 GOLD FOM - making it the only option for high-current, high-density, high-reliability PFC where gate loop stability and thermal scalability are design-critical.

Availability

IPT60R102G7XTMA1 is available at Aetrix Electronics and suitable for server front-end power supplies, telecom rectifier modules, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPT60R102G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and power management markets.

This device belongs to the CoolMOS™ G7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC conversion in data center, telecom, and renewable energy systems - emphasizing reduced switching loss, enhanced thermal scalability, and SMD manufacturability.

FAQ

What is the recommended gate resistor value for IPT60R102G7XTMA1 in a 100 kHz PFC application?

Infineon recommends a 5.6 Ω gate resistor in series with the driver output when using the Kelvin Source configuration. This value balances switching speed (to maintain <150 ns turn-off delay) and gate oscillation suppression, especially given the device's 1 nH source inductance and 34 nC Q_g. Lower values risk ringing; higher values increase switching loss beyond 0.8 W per device at full load.

Can IPT60R102G7XTMA1 be paralleled without external gate ferrite beads?

Yes - the integrated 4-pin Kelvin Source eliminates the need for external ferrite beads in most parallel configurations. However, Infineon specifies matched gate resistors (±5%) and symmetrical PCB layout (equal trace length/inductance per device) to ensure current sharing. For >4-device parallel arrays, localized gate driver decoupling (100 nF X7R near each gate pin) is still advised.

Does the TOLL package support reflow soldering per J-STD-020?

Yes - the TOLL package is MSL1 rated and qualified for peak reflow temperatures up to 260 °C per J-STD-020. The Pb-free die attach and grooved leads enable full process compatibility with standard lead-free reflow profiles (e.g., IPC/JEDEC J-STD-020D), including ramp rates up to 3 °C/s and time above liquidus ≤60 s.

How does the body diode recovery performance compare to previous CoolMOS™ generations?

IPT60R102G7XTMA1 achieves 305 ns t_rr and 3.1 μC Q_rr at 7.8 A - a 22% reduction in Q_rr versus C6-generation equivalents. Its 740 A/μs di/dt rating and soft recovery waveform (low I_rrm = 22 A) reduce EMI and snubber stress in LLC resonant tanks, unlike earlier G6 devices that required external SiC Schottky catch diodes in high-di/dt designs.