Infineon Technologies IPT60R105CFD7XTMA1

Overview

IPT60R105CFD7XTMA1 from Infineon Technologies is a 600 V, 105 mΩ ultra-fast body diode superjunction MOSFET in PG-HSOF-8 (TOLL) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 66 A pulsed drain current, 36 nC total gate charge, 0.41–0.82 μC reverse recovery charge, and 1300 A/μs di/dt ruggedness - enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPT60R105CFD7XTMA1 datasheet, IPT60R105CFD7XTMA1 pinout, IPT60R105CFD7XTMA1 application, or IPT60R105CFD7XTMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g FOM, best-in-class Q_rr, hard commutation robustness, and dedicated driver source pin for paralleling - all validated per JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast body diode and separate driver source (Pin 2), decoupling gate drive loop from power source return to minimize switching oscillation. Its reduced Q_g (9 nC), ultra-low Q_rr (0.41–0.82 μC), and 120 V/ns MOSFET dv/dt ruggedness enable stable ZVS operation at high frequency without snubbers.

The TOLL package provides 0.89 °C/W junction-to-case thermal resistance and supports high-current PCB mounting via drain tab. Internal body diode is rated for 24 A continuous forward current at 25°C and exhibits 98–147 ns reverse recovery time under 100 A/μs di/dt stress - critical for reliable hard commutation in asymmetric half-bridge configurations.

Key Specifications

Pinout & Package

PG-HSOF-8 (TOLL) is a thermally enhanced surface-mount package with an exposed drain tab on the bottom side and 8 signal terminals arranged in a single row. The package supports high-current routing and efficient heat transfer to the PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099CFD7 and IPP60R105CFD7, IPT60R105CFD7XTMA1 offers optimal balance of R_DS(on), Q_g, and thermal performance in SMD form - making it the preferred choice for high-density, automated production of resonant power supplies where PCB space and thermal coupling are constrained.

Availability

IPT60R105CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high-frequency resonant topology support.

Supply support for IPT60R105CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CFD7 product line was engineered specifically for soft-switching power conversion - targeting ZVS and LLC topologies in high-efficiency, high-power-density applications where body diode performance, dv/dt immunity, and thermal efficiency are critical.

FAQ

What is the function of Pin 2 (Driver Source) versus Pin 1 (Source)?

Pin 2 is a dedicated Kelvin source terminal for gate driver feedback, electrically isolated from the main power source path (Pin 1). This separation prevents source inductance from distorting gate voltage during fast switching, ensuring clean turn-on/turn-off behavior. Pins 1 and 2 must never be shorted or interchanged - doing so degrades switching performance and may cause malfunction.

Can IPT60R105CFD7XTMA1 replace older CoolMOS™ CFD2 devices?

Yes - IPT60R105CFD7XTMA1 is the direct successor to the CFD2 series, offering improved Q_rr (reduced by ~35%), lower Q_g, and enhanced di/dt ruggedness. Electrical pinout and package are identical, enabling drop-in replacement in existing layouts. However, gate drive timing and snubber design should be re-validated due to faster switching transitions.

Is the body diode suitable for continuous freewheeling in hard-switched topologies?

No - while the body diode is ultra-fast (t_rr = 98–147 ns), it is optimized for soft-switching freewheeling in ZVS/LLC, not hard-commutated conduction. For hard-switched applications like standard flyback or buck converters, an external Schottky or SiC diode is recommended to avoid excessive reverse recovery loss and thermal stress.

What is the maximum recommended gate resistor value for paralleling two IPT60R105CFD7XTMA1 devices?

Infineon recommends placing the gate resistor on the driver source (Pin 2) rather than the gate terminal when paralleling. For two devices, a 5–10 Ω non-inductive resistor per gate is typical; exact value depends on driver strength and layout parasitics. Layout symmetry - especially matched gate loop inductance and Kelvin source routing - is more critical than resistor value alone to ensure current sharing.