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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT60R125CFD7XTMA1

Name: IPT60R125CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT60R125CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT60R125CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT60R125CFD7XTMA1.pdf

Description:: MOSFET N-CH 600V 21A 8HSOF

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Product details

Overview

IPT60R125CFD7XTMA1 from Infineon Technologies is a 600 V, 125 mΩ ultra-fast body diode CoolMOS™ CFD7 power MOSFET in PG-HSOF-8 (TOLL) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 58 A pulsed drain current, 31 nC total gate charge, and 1300 A/μs di/dt ruggedness with best-in-class Q_rr of 0.38–0.76 μC - enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPT60R125CFD7XTMA1 datasheet, IPT60R125CFD7XTMA1 pinout, IPT60R125CFD7XTMA1 application, or IPT60R125CFD7XTMA1 equivalent, key selection criteria include its ultra-low R_DS(on) × Q_g FOM, hard commutation robustness, gate-source voltage rating up to ±30 V, and validated JEDEC industrial qualification.

Technical Context

This device implements Infineon's superjunction-based CoolMOS™ CFD7 architecture, featuring an integrated fast-recovery body diode with 95–142 ns reverse recovery time and 7.2 A peak I_rrm. Its gate plateau voltage is 5.7 V, and it achieves 0.101 Ω typical R_DS(on) at V_GS = 10 V and T_j = 25°C.

The PG-HSOF-8 (TOLL) package provides low thermal resistance (R_thJC = 0.99 °C/W) and enhanced power cycling capability. Internal source-sense pin separation prevents misconnection, and gate resistor placement on Driver Source (Pin 2) is recommended for paralleling configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus telecom and EV charging systems
R_DS(on)	0.125 Ω max at 10 V_GS, 25°C - enables low conduction loss in high-current LLC half-bridge legs
Q_g	31 nC - reduces driver power requirement and switching loss in ZVS operation
Q_rr	0.38–0.76 μC - minimizes diode recovery loss and EMI in resonant tank transitions
di/dt ruggedness	1300 A/μs - sustains hard commutation events without latch-up in asymmetric half-bridge designs
E_oss	3.6 μJ at 400 V - lowers capacitive turn-on loss during zero-voltage switching cycles
T_j max	150°C - allows operation in thermally constrained server PSU modules with forced-air cooling

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, drain-tab-down, with isolated sense-source pin for accurate gate drive referencing.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Low-inductance, high-current path to PCB copper pour; electrically connected to all internal die drains
Pin 1 (Source)	Power source reference	Primary return path for load current; connects to main source node in half-bridge leg
Pin 2 (Driver Source)	Sense-source for gate driver	Provides Kelvin connection to gate driver IC; must not be swapped with Pin 1 to avoid regulation error
Pin 3–8 (Source)	Parallel source terminals	Multiple low-inductance source paths reduce common-source inductance and improve switching stability
Pin ? (Gate)	Control input	Standard MOSFET gate terminal; driven referenced to Pin 2 (Driver Source), not Pin 1

Key Features

Feature	Design Value
Ultra-fast body diode	95–142 ns t_rr and 0.38–0.76 μC Q_rr enable clean ZVS transitions without voltage spikes in LLC resonant tanks
Optimized FOM (R_DS(on) × Q_g)	Best-in-class figure-of-merit ensures lowest combined conduction and switching loss across 100–300 kHz operating range
Hard commutation ruggedness	Validated 1300 A/μs di/dt and 120 V/ns dv/dt withstand capability for reliable operation in asymmetrical topologies
JEDEC industrial qualification	Full qualification per JESD47 and JESD22 standards confirms long-term reliability under thermal cycling and humidity bias stress

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW, 48 V output, dual-phase LLC resonant converter in hyperscale data center PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch in resonant half-bridge leg, operating at 250 kHz with ZVS.

Use Value: 0.125 Ω R_DS(on) and 31 nC Q_g reduce conduction and gate drive losses, improving full-load efficiency by ≥0.4% versus CFD2 generation.

Use Scenario: 48 V/50 A telecom rectifier with active OR-ing and hold-up capability.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side synchronous rectification stage.

Use Value: Fast body diode (t_rr ≤ 142 ns) eliminates need for external Schottky, reducing BOM count and layout area while maintaining <1.5 V_f forward drop.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: 11 kW bidirectional OBC with PFC + CLLC stages operating from 200–1000 V DC input.

IC Role / Device Role / Timing Role: High-voltage bridge switch in CLLC resonant DC-DC stage, handling 600 V blocking and 58 A pulsed current.

Use Value: 150°C T_j rating and 0.99 °C/W R_thJC support compact heatsink design in space-constrained automotive enclosures.

Use Scenario: 5 kVA three-phase UPS inverter module with soft-switched IGBT replacement.

IC Role / Device Role / Timing Role: High-frequency switching element in resonant inverter leg, replacing 600 V IGBTs to reduce switching loss.

Use Value: 1300 A/μs di/dt ruggedness and 70 V/ns reverse diode dv/dt rating ensure robust operation during short-circuit fault recovery without desaturation failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPT60R125CFD2XTMA1	Higher Q_rr (1.1 μC), higher R_DS(on) (135 mΩ), no dedicated Driver Source pin	Limited to lower-frequency ZVS; less suitable for high-di/dt LLC with tight dead-time control	Select only if cost sensitivity outweighs efficiency gain and layout simplicity of CFD7's Kelvin source
IPW60R125CFD7XKSA1	TO-247-4L package, identical electrical specs, higher R_thJC (0.75 °C/W), no sense-source isolation	Better for prototyping and low-volume industrial inverters where through-hole mounting is preferred	Choose when thermal interface flexibility or legacy TO-247 footprint compatibility is required over SMD power density

Compared with IPT60R125CFD2XTMA1 and IPW60R125CFD7XKSA1, the IPT60R125CFD7XTMA1 uniquely combines SMD power density, Kelvin source routing, and industry-leading Q_rr/R_DS(on) balance - making it optimal for volume production of high-efficiency, space-constrained resonant converters.

Availability

IPT60R125CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and high-volume SMD manufacturability.

Supply support for IPT60R125CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The CoolMOS™ CFD7 product line targets high-efficiency soft-switching power conversion, specifically engineered to replace older superjunction MOSFETs and IGBTs in resonant topologies where low Q_rr, fast di/dt, and ease of gate drive are critical.

FAQ

What is the maximum continuous drain current rating for IPT60R125CFD7XTMA1?

The maximum continuous drain current is 21 A at T_c = 25°C and derates to 13 A at T_c = 100°C. This rating assumes proper PCB copper area (6 cm² drain pad) and thermal management per Infineon's PG-HSOF-8 layout guidelines. Pulsed current capability reaches 58 A for short durations with appropriate duty cycle limits.

Why are Pin 1 (Source) and Pin 2 (Driver Source) not interchangeable?

Pin 1 carries high-current source return, while Pin 2 is a dedicated Kelvin sense connection routed directly to the gate driver IC's reference. Swapping them introduces ground loop inductance and gate voltage regulation error, causing erratic switching, increased EMI, and potential shoot-through. The datasheet explicitly warns against this configuration.

Can IPT60R125CFD7XTMA1 be used in hard-switched topologies like standard flyback or forward converters?

Yes, but with trade-offs: its ultra-low Q_rr and fast di/dt still provide benefit in hard-switched designs with freewheeling diodes, yet its optimized R_DS(on) × Q_g FOM yields greatest advantage in resonant topologies. For hard-switched use, ensure gate drive strength exceeds 2 A peak and layout minimizes source inductance to avoid oscillation.

What is the recommended gate resistor value when paralleling two IPT60R125CFD7XTMA1 devices?

Infineon recommends placing individual gate resistors (typically 5–10 Ω) on the Driver Source (Pin 2) side of each device, not at the gate pin. This maintains matched gate voltage waveforms and prevents current imbalance. Layout symmetry - equal trace length, width, and proximity to gate driver - is more critical than exact resistor tolerance for stable parallel operation.

IPT60R125CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 6.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1330 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 127W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT60R125CFD7XTMA1 FAQ

1.How can I place an order for IPT60R125CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT60R125CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT60R125CFD7XTMA1 reliable?

The price and inventory of IPT60R125CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60R125CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT60R125CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60R125CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT60R125CFD7XTMA1?

IPT60R125CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT60R125CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT60R125CFD7XTMA1?

For technical support, including IPT60R125CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60R125CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT60R125CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT60R125CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60R125CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT60R125CFD7XTMA1?

All IPT60R125CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60R125CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT60R125CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT60R125CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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