Infineon Technologies IPT60R150G7XTMA1

Overview

IPT60R150G7XTMA1 from Infineon is a 600 V, 150 mΩ silicon carbide–compatible superjunction MOSFET in TOLL (PG-HSOF-8) package, featuring Kelvin Source configuration for reduced gate oscillation and <1 nH source inductance. It delivers 45 A pulsed drain current, 2.74 μJ E_oss at 400 V, and 700 A/μs body diode di/dt - optimized for high-efficiency PFC and LLC resonant converters up to 3 kW in server, telecom, and solar inverters.

For engineers reviewing the IPT60R150G7XTMA1 datasheet, IPT60R150G7XTMA1 pinout, IPT60R150G7XTMA1 application, or IPT60R150G7XTMA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM (15% better than prior C7), MSL1-compliant SMD thermal performance (R_thJC = 1.18 °C/W), and validated hard/soft-switching capability in industrial-grade topologies.

Technical Context

This CoolMOS™ G7 device implements a superjunction structure with optimized charge balancing for low R_DS(on) × Q_g and R_DS(on) × E_oss figures of merit. Its Kelvin Source architecture separates power and sensing source paths, enabling precise gate control and minimizing parasitic inductance-induced ringing during fast switching.

The TOLL package integrates four dedicated source terminals (Pins 3–8 for power source, Pin 2 for Kelvin source), supports reflow soldering at 260 °C, and achieves 35–45 °C/W junction-to-ambient resistance on a 40 mm × 40 mm FR4 PCB - enabling SMD deployment in >2 kW continuous conduction mode PFC stages.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, MSL1, lead-free die attach, grooved leads for visual inspection. Drain tab exposed on underside for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099C7 and STP60N6F7, IPT60R150G7XTMA1 uniquely balances switching efficiency, SMD manufacturability, and gate drive simplicity - making it the optimal choice for new 2–3 kW PFC/LLC platforms where board space, thermal density, and production scalability are critical.

Availability

IPT60R150G7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply, JEDEC-qualified industrial reliability, and SMD-compatible high-current switching performance.

Supply support for IPT60R150G7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ G7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC–DC and DC–DC conversion in data center, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for IPT60R150G7XTMA1?

The maximum continuous drain current is 17 A at T_c = 25°C and derates to 11 A at T_c = 100°C per the datasheet's absolute maximum ratings table. This rating assumes proper PCB copper area (6 cm² drain pad) and ambient cooling conditions - not case temperature alone.

Does IPT60R150G7XTMA1 require external gate ferrite beads in PFC applications?

No - the integrated 4-pin Kelvin Source configuration reduces source inductance to ~1 nH, eliminating gate ringing in typical 65–100 kHz PFC designs without ferrite beads. Ferrites are only recommended if layout introduces >5 nH gate loop inductance or when paralleling multiple devices.

How does the TOLL package improve thermal performance versus TO-220 or TO-247?

The TOLL package achieves R_thJC = 1.18 °C/W - 25% lower than comparable TO-247 devices - due to its exposed drain tab, optimized copper clip construction, and direct thermal path to PCB. On a 40 mm × 40 mm FR4 board, R_thJA is 35–45 °C/W, enabling 30% higher power density than through-hole alternatives.

Is IPT60R150G7XTMA1 suitable for synchronous rectification in LLC converters?

Yes - its body diode supports 700 A/μs di/dt and 245 ns reverse recovery time, enabling clean commutation in secondary-side synchronous rectification. However, it is not optimized as a dedicated SR FET; use only in primary-side or asymmetrical bridge configurations where its V_DS and R_DS(on) align with system voltage and current demands.