Infineon Technologies IPT60T022S7XTMA1
- Part No.:
- IPT60T022S7XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSFN
- Datasheet:
-
IPT60T022S7XTMA1.pdf
- Description:
- HIGH POWER_NEW
- Quantity:
- Payment:

- Shipping:

Inventory:218
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Product details
Overview
IPT60T022S7XTMA1 from Infineon is a 600 V, 22 mΩ silicon carbide–free superjunction MOSFET with integrated temperature sensor, designed for static switching and high-current line rectification in industrial SMPS, UPS, and solar inverters. It delivers 23 A continuous drain current at TC = 140°C, 371 A pulsed current, and features a 0.32 °C/W junction-to-case thermal resistance in PG-HSOF-8 package with exposed drain tab.
For engineers reviewing the IPT60T022S7XTMA1 datasheet, IPT60T022S7XTMA1 pinout, IPT60T022S7XTMA1 application, or IPT60T022S7XTMA1 equivalent, key selection criteria include RDS(on) stability over temperature, integrated junction temperature sensing accuracy (±5.96 mV/K TC), low gate charge (150 nC), and robust dv/dt ruggedness (20 V/ns) for high-reliability solid-state relay and circuit breaker designs.
Technical Context
This CoolMOS™ S7 device uses charge-compensation superjunction architecture to achieve ultra-low RDS(on) while maintaining 600 V blocking capability and enhanced avalanche energy rating (286 mJ). Its internal body diode exhibits 0.82 V forward voltage and 460 ns reverse recovery time at 23 A.
The monolithically integrated temperature sensor is electrically isolated from the power die and provides calibrated forward-voltage-based junction temperature measurement across –55°C to +175°C, with 10 µA to 500 µA bias current options and <±0.1 V absolute error over full range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on), max | 22 mΩ at VGS = 12 V, ID = 23 A, Tj = 25°C - enables minimal conduction loss in high-current static switches |
| V(BR)DSS | 600 V - supports primary-side switching in 400 V AC rectified bus applications without derating |
| Qg, typ | 150 nC - determines gate drive power and switching loss in low-frequency (<100 kHz) operation |
| Tj max | 150°C continuous, 175°C short-term (<50 h) - defines thermal design margin for sealed industrial enclosures |
| RthJC | 0.32 °C/W - allows direct heatsink mounting via exposed drain tab for compact thermal path |
| VSD | 0.82 V at IF = 23 A - reduces freewheeling loss in synchronous rectification and bidirectional topologies |
| dv/dt ruggedness | 20 V/ns - ensures reliable operation in high-dV/dt environments like motor drives and inverter outputs |
Pinout & Package
Package: PG-HSOF-8 (Plastic Gull-wing Small Outline Flat, 8-pin), with thermally enhanced exposed drain tab on bottom side for direct PCB copper pad attachment. Pin 1 is Source, Pin 2 is Temperature Sensor Anode, Pin 3–8 are Source (common), Gate is Pin 1 (isolated), Drain is tab-connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain Tab | Main power drain terminal | Electrically connected to internal drain; requires soldered thermal pad for heat dissipation and current conduction |
| Pin 1 | Source | Primary source connection; pins 3–8 internally tied to same node for parallel routing and low-inductance layout |
| Pin 2 | Temperature Sensor Anode | Provides forward-biased diode output for junction temperature sensing; requires external current source (10–500 µA) |
| Pins 3–8 | Source (common) | Multiple source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Integrated temperature sensor | Monolithic Si diode with ±0.1 V VF error over –55°C to +175°C; eliminates external NTC/BG sensor and calibration overhead |
| CoolMOS™ S7 superjunction structure | 22 mΩ RDS(on) at 600 V rating - achieves best-in-class conduction efficiency without SiC cost premium |
| High pulse current capability | 371 A pulsed drain current - supports surge handling in circuit breakers and soft-start sequences |
| Low EAS rating | 286 mJ single-pulse avalanche energy - enables robust unclamped inductive switching without external snubbers |
| Enhanced dv/dt immunity | 20 V/ns MOSFET dv/dt ruggedness - prevents false turn-on in high-noise industrial motor control environments |
Applications
| Solid-State Relay (SSR) | Industrial UPS Inverter Stage |
|---|---|
|
Use Scenario: Replacing electromechanical relays in PLC output modules and HVAC contactors requiring >1 million operations. IC Role / Device Role / Timing Role: High-side static switch controlling 230/400 V AC loads with zero-crossing synchronization. Use Value: Eliminates contact arcing and bounce; enables 10× longer lifetime and silent operation under 50/60 Hz switching. |
Use Scenario: DC–AC inversion stage in 3–10 kVA online UPS systems with battery backup and grid-tie capability. IC Role / Device Role / Timing Role: Low-frequency (50/60 Hz) high-current half-bridge switch with integrated thermal monitoring. Use Value: Reduces heatsink size by 40% vs. legacy MOSFETs; real-time junction temperature feedback prevents thermal runaway during overload. |
| Solar String Inverter Rectification | High-Power Computing PSU PFC Stage |
|
Use Scenario: Line rectification in string inverters converting 600–1000 V DC PV input to intermediate DC bus. IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier with body diode conduction during dead-time intervals. Use Value: 0.82 V VSD and 460 ns trr minimize reverse recovery loss and EMI generation in 16–20 kHz PFC stages. |
Use Scenario: Active clamp forward or LLC resonant converter primary-side switch in server PSUs delivering ≥2 kW. IC Role / Device Role / Timing Role: 600 V primary switch operating at ≤100 kHz with precise thermal management. Use Value: Integrated temperature sensor enables dynamic derating and predictive maintenance in air-cooled 1U chassis with tight thermal budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage static switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW60R024P7XKSA1 | RDS(on) = 24 mΩ, no integrated temperature sensor, TO-247-3 package | Lacks on-die thermal sensing; requires external NTC and signal conditioning | Preferred when board space permits larger package and thermal sensing is handled externally |
| STW62N60M2 | RDS(on) = 30 mΩ, no temperature sensor, D2PAK package, lower Qg (110 nC) | Higher conduction loss but faster switching; unsuitable for precision thermal protection | Selected where cost sensitivity outweighs thermal monitoring needs and lower gate drive loss is prioritized |
Compared with IPW60R024P7XKSA1 and STW62N60M2, IPT60T022S7XTMA1 uniquely combines lowest RDS(on) in HSOF-8, integrated temperature sensing, and industry-leading avalanche ruggedness-making it optimal for space-constrained, thermally critical SSR and UPS applications where system-level reliability is non-negotiable.
Availability
IPT60T022S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay design, industrial UPS inverter stages, and solar string inverter rectification requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for IPT60T022S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
IPT60T022S7XTMA1 belongs to the CoolMOS™ S7 superjunction MOSFET product line, engineered specifically for high-efficiency, low-frequency static switching in industrial power infrastructure where thermal intelligence and conduction loss minimization are critical.
FAQ
What is the function of Pin 2 on IPT60T022S7XTMA1?
Pin 2 is the anode of a monolithically integrated silicon diode used for junction temperature sensing. It must be biased with a constant current source (10–500 µA) between Pin 2 (anode) and Pin 1 (source/cathode reference); its forward voltage varies linearly with temperature at ~5.96 mV/K, enabling accurate real-time thermal monitoring without external sensors.
Can IPT60T022S7XTMA1 replace standard 600 V MOSFETs in existing PCB layouts?
Yes, but only if the PCB footprint matches PG-HSOF-8: 8-pin gull-wing with 0.65 mm pitch and exposed drain tab requiring ≥20 mm² copper area. The pinout differs from SO-8 or TO-220-Pin 1 is Source (not Gate), and Pin 2 is dedicated to temperature sensing, so schematic and layout revisions are required for functional integration.
How does the integrated temperature sensor improve system reliability?
The sensor provides direct, drift-free junction temperature measurement with ±0.1 V accuracy over –55°C to +175°C, enabling real-time thermal derating, predictive shutdown before Tj exceeds 150°C, and elimination of calibration drift seen in external NTCs-critical for sealed industrial enclosures where ambient temperature cannot represent actual die temperature.
What is the maximum safe operating frequency for IPT60T022S7XTMA1?
IPT60T022S7XTMA1 is optimized for low-frequency switching (≤100 kHz), not RF or MHz-range operation. Its 150 nC total gate charge and 150 ns turn-off delay make it inefficient above 50–100 kHz; using it beyond this range increases switching losses disproportionately and risks thermal runaway without aggressive gate drive and cooling.
IPT60T022S7XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- 8-PowerSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 12V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 23A, 12V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1.43mA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 12 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5640 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 390W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HSOF-8-2
IPT60T022S7XTMA1 FAQ
1.How can I place an order for IPT60T022S7XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPT60T022S7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPT60T022S7XTMA1 reliable?
The price and inventory of IPT60T022S7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT60T022S7XTMA1 is usually 5 days.
3.What payment methods are accepted for IPT60T022S7XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT60T022S7XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPT60T022S7XTMA1?
IPT60T022S7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPT60T022S7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPT60T022S7XTMA1?
For technical support, including IPT60T022S7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT60T022S7XTMA1 requirements.
6.How does Aetrix verify that IPT60T022S7XTMA1 is sourced from the original manufacturer or authorized distributors?
All IPT60T022S7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT60T022S7XTMA1 meets industry standards.
7.What is the process for return or replacement of IPT60T022S7XTMA1?
All IPT60T022S7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT60T022S7XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPT60T022S7XTMA1 part is unused and in its original packaging.
Return procedure for IPT60T022S7XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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