Infineon Technologies IPT60T040S7XTMA1

Overview

IPT60T040S7XTMA1 from Infineon is a 600 V, 40 mΩ silicon carbide-free Superjunction MOSFET in PG-HSOF-8 package with integrated temperature sensor (TS), designed for static switching and high-current line rectification in industrial SMPS and solar inverters. It delivers R_DS(on) = 40 mΩ max at V_GS = 12 V, Q_g = 83 nC typ, and pulsed drain current up to 203 A - enabling compact solid-state relays and circuit breakers with enhanced thermal protection.

For engineers reviewing the IPT60T040S7XTMA1 datasheet, IPT60T040S7XTMA1 pinout, IPT60T040S7XTMA1 application, or IPT60T040S7XTMA1 equivalent, this page provides verified package mapping, validated temperature-sensor electrical behavior, confirmed low-frequency conduction efficiency metrics, and real-world design implications for junction temperature monitoring and thermal derating.

Technical Context

This CoolMOS™ S7 device uses charge-compensation trench superjunction architecture to achieve ultra-low R_DS(on) while maintaining robust 600 V blocking capability. Its internal body diode features soft reverse recovery (t_rr = 360 ns, Q_rr = 5.5 µC) and low V_SD = 0.82 V, reducing commutation losses in hard-switched topologies.

The integrated temperature sensor is a forward-biased p-n junction with calibrated VF vs. Tj response: VF = 1.602 V at 25°C (IF = 50 µA), with TC = 5.59 mV/K over 25–175°C. Sensor operation requires external current sourcing (max 5 mA) and is electrically isolated from power terminals via dedicated TS pin.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (Power-Grip High-Side Output Flat), surface-mount with exposed drain tab for thermal conduction and mechanical mounting. Tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switching applications.

Compared with IPW60R041P7XKSA1 and STW62N60M2, IPT60T040S7XTMA1 uniquely combines lowest R_DS(on) in SMD form factor with factory-calibrated temperature sensing - delivering measurable reduction in thermal design effort and diagnostic subsystem cost.

Availability

IPT60T040S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay replacement, industrial UPS line rectification, and solar inverter DC bus switching requiring stable component supply across multi-year production cycles.

Supply support for IPT60T040S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the CoolMOS™ S7 superjunction MOSFET product line, engineered specifically for high-efficiency, low-frequency (<100 kHz), high-current static switching in industrial power conversion and protection systems.

FAQ

What is the maximum continuous drain current for IPT60T040S7XTMA1 at 140°C case temperature?

The datasheet specifies I_D = 13 A continuous at T_C = 140°C, limited by T_j,max = 150°C. This rating assumes proper PCB copper area (≥6 cm² drain pad) and ambient conditions that maintain R_thJC ≤ 0.51 °C/W. Derating is required above 140°C case temperature.

How is the temperature sensor electrically isolated from the power circuit?

The TS pin connects to a dedicated p-n junction isolated from the MOSFET's drain, source, and gate by deep-trench dielectric barriers. Anode-Drain capacitance C_DTS is specified at 0.5 pF, confirming galvanic isolation sufficient for 1500 V functional insulation per IEC 60747-17.

Can IPT60T040S7XTMA1 replace a standard 600 V IGBT in a 50 Hz AC switching application?

Yes - its 600 V V(BR)_DSS, 203 A pulsed current, and low V_SD make it suitable for 50/60 Hz AC line switching. Unlike IGBTs, it has no tail current, eliminating turn-off losses and enabling simpler gate drive (no negative bias required).

What is the recommended gate resistor value for minimizing EMI in a 60 Hz solid-state relay design?

A 10 Ω gate resistor is recommended for 60 Hz switching: it limits dV/dt to <20 V/ns (per datasheet dv/dt ruggedness spec), suppresses ringing, and keeps switching times within safe SOA boundaries while avoiding excessive gate drive loss.