Infineon Technologies IPT60T065S7XTMA1

Overview

IPT60T065S7XTMA1 from Infineon is a 600V, 8A (continuous), 123A pulsed silicon carbide–free Superjunction MOSFET with integrated temperature sensor and 65 mΩ R_DS(on) at 12 V_GS, designed for static switching in solid-state relays, circuit breakers, and line rectification in high-power SMPS and inverters.

For engineers reviewing the IPT60T065S7XTMA1 datasheet, IPT60T065S7XTMA1 pinout, IPT60T065S7XTMA1 application, or IPT60T065S7XTMA1 equivalent, key selection criteria include junction temperature sensing accuracy (±0.5°C typical), low gate charge (51 nC), dv/dt ruggedness (20 V/ns), and thermal resistance (0.75 °C/W) for high-reliability industrial power control.

Technical Context

This CoolMOS™ S7 device uses charge-compensation trench technology to achieve lowest R_DS(on) per die area among 600V SJ MOSFETs, enabling reduced conduction loss without increasing package size. Its internal body diode and embedded temperature sensor share the same die, with sensor forward voltage calibrated across 25–175°C (1.56–0.67 V at 10 µA).

The MOSFET operates in low-frequency switching (≤100 kHz) applications where thermal stability dominates over switching loss optimization. Gate plateau voltage is fixed at 5.4 V, and its 1932 pF C_iss and 32 pF C_oss support predictable drive design with standard gate drivers.

Key Specifications

Pinout & Package

PG-HSOF-8 is a surface-mount, thermally enhanced 8-pin package with an exposed drain tab on the bottom for direct heatsink mounting. The tab is electrically connected to Drain (Pin 1), and Pin 2 hosts the integrated temperature sensor anode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage static switching applications.

Compared with IPW60R070CFD7 and STW62N60M2, IPT60T065S7XTMA1 uniquely combines low R_DS(on), integrated temperature sensing, and compact PG-HSOF-8 packaging-making it optimal for space-constrained, thermally critical SSR and breaker designs requiring autonomous thermal protection.

Availability

IPT60T065S7XTMA1 is available at Aetrix Electronics and suitable for solid-state relay manufacturing, industrial circuit breaker development, and high-efficiency line rectification in telecom and solar power systems requiring stable component supply and long-term lifecycle assurance.

Supply support for IPT60T065S7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ S7 superjunction MOSFET product line, engineered specifically for low-frequency, high-current static switching applications demanding minimal conduction loss and robust thermal management.

FAQ

What is the maximum allowable gate-source voltage for continuous operation?

The absolute maximum continuous gate-source voltage is ±20 V. Exceeding this risks oxide breakdown. For dynamic operation (e.g., during switching transients), the limit rises to ±30 V peak, but sustained exposure above ±20 V must be avoided. Gate drive circuits should include clamping (e.g., 18 V Zener) and series resistance (≥10 Ω) to limit dV/dt-induced current spikes.

How is the temperature sensor calibrated, and what accuracy can be expected?

The sensor is a monolithic PN junction with forward voltage specified at 10–500 µA test currents across 25–175°C. At 10 µA, VF drifts linearly at −5.96 mV/K; accuracy is ±0.5°C typical over 25–150°C after two-point calibration. No factory trimming is required, but system-level calibration against a reference sensor improves precision to ±0.3°C.

Can IPT60T065S7XTMA1 replace a standard 600V Si diode in line rectification?

Yes - when used as a synchronous rectifier in low-frequency (≤120 Hz) AC line rectification, its 0.82 V V_SD and 8 A continuous rating deliver lower conduction loss than a 600V Si diode (1.1 V typical). However, it requires active gate control and cannot function as a passive diode; gate must be driven high during conduction and low during blocking.

What is the recommended PCB layout for thermal performance?

Use ≥6 cm² of 70 µm thick copper on the drain layer, connected directly to the exposed tab via ≥4 thermal vias (0.3 mm diameter, filled). Keep gate and source traces short and wide; separate power and signal grounds; place temperature sensor sense resistor (10–100 kΩ) within 2 mm of Pin 2. Avoid routing high-dv/dt traces near Pin 2 to prevent sensor noise coupling.