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Infineon Technologies IPT65R040CFD7XTMA1

Part No.:
IPT65R040CFD7XTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerSFN
Datasheet:
AetrixIPT65R040CFD7XTMA1.pdf
Description:
MOSFET N-CH 650V 8HSOF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

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Product details

Overview

IPT65R040CFD7XTMA1 from Infineon is a 650 V superjunction MOSFET with 40 mΩ max RDS(on), ultra-fast body diode (diF/dt = 1300 A/µs), and PG-HSOF-8 package. It serves as a primary-side switching device in resonant topologies-LLC and phase-shift full-bridge-with ZVS operation, delivering high efficiency at light and full load in industrial SMPS.

For engineers reviewing the IPT65R040CFD7XTMA1 datasheet, IPT65R040CFD7XTMA1 pinout, IPT65R040CFD7XTMA1 application, or IPT65R040CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of RDS(on), Eoss = 14.8 µJ @ 400 V, and gate charge Qg = 97 nC for optimized ZVS timing control.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast-recovery body diode, enabling robust hard-switching capability while maintaining low conduction and switching losses. Its diF/dt rating of 1300 A/µs and reverse recovery charge Qrr = 1.3–2.6 µC support reliable operation under high di/dt stress in ZVS circuits.

The MOSFET features a gate plateau voltage of 5.7 V and exhibits minimal RDS(on) drift over temperature (typ. 1.0× at Tj = 125 °C vs. 25 °C), ensuring stable current handling across industrial thermal ranges. Its Co(er) = 185 pF and Ciss = 4975 pF are optimized for soft-switching gate drive design in high-frequency resonant converters.

Key Specifications

Parameter Value and Actual Design Meaning
VDS max 650 V - supports 400 V bus designs with 1.6× safety margin for transient overvoltage in telecom/server PSUs
RDS(on) max 40 mΩ @ Tj = 25 °C - enables <63 A continuous drain current at TC = 25 °C with low conduction loss
Qg typ 97 nC - determines gate driver power requirement and influences ZVS dead-time tuning precision
Eoss 14.8 µJ @ 400 V - directly impacts turn-on switching loss and resonant tank energy recycling efficiency
diF/dt max 1300 A/µs - ensures reliable body diode commutation during hard-switching events without oscillation or latch-up
Tj max 150 °C - qualified per JEDEC JESD47 for industrial applications with extended thermal headroom
RthJC 0.36 °C/W - enables high-power dissipation (347 W @ TC = 25 °C) with direct tab cooling

Pinout & Package

Package: PG-HSOF-8 - surface-mount, thermally enhanced 8-pin package with exposed drain tab for low-inductance, high-current PCB mounting and direct heatsink coupling.

Pin/Terminal Circuit Role Design Meaning
Drain Tab Main power drain connection Exposed copper pad carrying full load current; must be soldered to large copper area for thermal and electrical performance
Pin 1 Source Power source terminal; referenced for gate drive and current sensing; not interchangeable with sense source
Pin 2 Driver Source Dedicated Kelvin source for gate driver return path; minimizes gate loop inductance and improves switching stability
Pins 3–8 Source (parallel) Additional source connections to reduce package resistance and improve current sharing across internal dies

Key Features

Feature Design Value
Ultra-fast body diode diF/dt = 1300 A/µs enables reliable hard commutation in asymmetric half-bridge and PSFB without snubbers
Low RDS(on) tempco RDS(on) increases only ~1.0× from 25 °C to 125 °C - maintains current derating predictability in thermal cycling
Reduced Eoss 14.8 µJ @ 400 V lowers turn-on loss and eases ZVS condition across wide load range in LLC converters
High avalanche energy EAS = 248 mJ (single pulse) provides margin against inductive switching transients in unregulated systems
JEDEC industrial qualification Fully qualified per JESD47 - validated for 150 °C Tj, 1000-hr HTOL, and HAST, supporting long-life server/industrial deployments

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3–6 kW LLC resonant DC-DC converters powering CPU/GPU VRMs.

IC Role / Device Role / Timing Role: High-voltage switching element operating in zero-voltage switching mode with precise dead-time control.

Use Value: 14.8 µJ Eoss and 97 nC Qg enable >96% full-load efficiency and >94% efficiency at 10% load.

Use Scenario: Main switch in 2–4 kW phase-shift full-bridge rectifiers for -48 V telecom distribution.

IC Role / Device Role / Timing Role: Hard-commutated high-side switch requiring robust body diode recovery under high diF/dt.

Use Value: 1300 A/µs diF/dt rating prevents diode-induced shoot-through and eliminates need for external anti-parallel SiC diodes.

EV Onboard Charger Solar String Inverter

Use Scenario: Primary-side switch in bi-directional CLLC converters for 11 kW AC/DC + DC/AC OBC systems.

IC Role / Device Role / Timing Role: Bidirectional resonant switch managing both charging and vehicle-to-grid (V2G) energy flow.

Use Value: Low RDS(on) tempco and 150 °C Tj rating sustain performance across ambient temperatures from -40 °C to +85 °C.

Use Scenario: High-side switch in 5–10 kW two-stage solar inverters with boost + full-bridge topology.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling high input ripple current and partial shading transients.

Use Value: 248 mJ single-pulse avalanche energy withstands lightning-induced surges on PV input without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW65R041C7 RDS(on) max = 41 mΩ; Qg = 95 nC; same PG-TO247-4 package; no dedicated Driver Source pin Lacks Kelvin source - higher gate loop inductance limits ZVS reliability above 300 kHz Prefer for TO-247-based legacy designs where PCB layout cannot accommodate HSOF-8's compact footprint
STP65N045M6 RDS(on) max = 45 mΩ; Qg = 102 nC; standard TO-220FP package; diF/dt = 800 A/µs Lower diode ruggedness requires external snubber in PSFB; higher RDS(on) increases conduction loss by ~12.5% Acceptable for cost-sensitive 1–2 kW telecom supplies where peak efficiency is secondary to BOM cost

Compared with IPW65R041C7 and STP65N045M6, IPT65R040CFD7XTMA1 delivers superior ZVS margin via its dedicated Driver Source pin and 62.5% higher diF/dt, making it optimal for high-density, high-efficiency 3+ kW resonant converters where thermal and switching loss budgets are constrained.

Availability

IPT65R040CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and high thermal conductivity packaging.

Supply support for IPT65R040CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CFD7 product line targets high-efficiency resonant power conversion, specifically engineered for ZVS topologies like LLC and phase-shift full-bridge in datacenter, telecom, and renewable energy systems.

FAQ

Can IPT65R040CFD7XTMA1 replace older CFD2-series MOSFETs in existing designs?

Yes, it is a direct successor to the 650 V CoolMOS™ CFD2 series with identical pinout and improved RDS(on), switching loss, and body diode performance. Layout compatibility is maintained, but gate drive strength should be verified due to 97 nC Qg-slightly higher than CFD2's typical 85 nC. No PCB changes are required.

What is the purpose of the Driver Source (Pin 2) versus Source (Pin 1)?

Pin 2 (Driver Source) is a Kelvin connection exclusively for gate driver return, minimizing gate loop inductance and preventing oscillation during fast switching. Pin 1 (Source) carries main power current and must not be used for gate reference. Swapping them causes unstable turn-on and potential device failure.

Is parallel operation supported, and what layout guidance applies?

Yes, parallel operation is supported using multiple IPT65R040CFD7XTMA1 units. Gate resistors must be placed on the Driver Source (Pin 2), not the Gate, to ensure balanced dynamic current sharing. Symmetrical PCB trace lengths and individual gate resistor placement per device are mandatory for stability.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device specifies ±20 V static and ±30 V dynamic gate-source voltage ratings. A gate drive of 0 V to +12–15 V is sufficient for full enhancement and safe turn-off. Negative bias is unnecessary and not recommended, as it adds complexity without improving ruggedness or switching speed.

IPT65R040CFD7XTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD7
Package/Case:
8-PowerSFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HSOF-8-2

IPT65R040CFD7XTMA1 FAQ

1.How can I place an order for IPT65R040CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R040CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R040CFD7XTMA1 reliable?

The price and inventory of IPT65R040CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R040CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R040CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R040CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R040CFD7XTMA1?

IPT65R040CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R040CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R040CFD7XTMA1?

For technical support, including IPT65R040CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R040CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT65R040CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R040CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R040CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R040CFD7XTMA1?

All IPT65R040CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R040CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R040CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R040CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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