Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R060CFD7XTMA1

Name: IPT65R060CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT65R060CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPT65R060CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R060CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,988

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPT65R060CFD7XTMA1 from Infineon is a 650 V superjunction MOSFET with 60 mΩ max R_DS(on), ultra-fast body diode (d_iF/dt = 1300 A/µs), and PG-HSOF-8 package. It delivers best-in-class switching efficiency in ZVS topologies including LLC and phase-shift full-bridge, targeting high-power-density industrial SMPS in server, telecom, EV charging, and solar inverters.

For engineers reviewing the IPT65R060CFD7XTMA1 datasheet, IPT65R060CFD7XTMA1 pinout, IPT65R060CFD7XTMA1 application, or IPT65R060CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature-dependent R_DS(on), E_oss of 10.0 µJ at 400 V, and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device uses charge compensation technology to achieve low R_DS(on) × area while maintaining fast, soft reverse recovery (t_rr = 141–212 ns, Q_rr = 0.86–1.72 µC) and high dv/dt ruggedness (120 V/ns). Its internal body diode enables reliable synchronous rectification and ZVS turn-on in resonant converters.

The PG-HSOF-8 package integrates a thermally optimized drain tab and separate driver source (Pin 2) for gate loop control-critical for paralleling and minimizing oscillation. Pin 1 is source, Pins 3–8 are parallel source terminals, and the gate is isolated on Pin 1's adjacent pad; source/sense source pins are non-interchangeable.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V bus designs with 25% voltage margin for transient overvoltage in industrial power supplies
R_DS(on) max @ 25°C	60 mΩ - enables <43 A continuous current at T_C = 25°C with low conduction loss in high-current primary switches
Q_g typ	65 nC - balances gate drive strength and switching speed for optimal E_on/E_off trade-off in 100–300 kHz LLC operation
E_oss @ 400 V	10.0 µJ - reduces capacitive turn-on loss and improves light-load efficiency in resonant topologies
d_iF/dt max	1300 A/µs - ensures robust hard commutation during freewheeling in phase-shifted full-bridge without snap-off or voltage overshoot
T_j max	150 °C - rated for sustained operation in sealed enclosures or high-ambient environments per JEDEC industrial qualification
R_thJC	0.5 °C/W - enables direct heatsink mounting via drain tab for thermal management in >1 kW power stages

Pinout & Package

Package: PG-HSOF-8 - surface-mount, thermally enhanced 8-pin package with exposed drain tab for low-inductance, high-current routing and direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Low-inductance, high-current path; electrically and thermally coupled to PCB copper pour or heatsink
Pin 1	Source (main)	Primary source reference for power return; must not be swapped with sense source (Pin 2)
Pin 2	Driver Source (sense)	Gate loop reference point for clean gate drive; required for stable paralleling and EMI control
Pins 3–8	Parallel source terminals	Redundant source connections to minimize bond wire inductance and improve current sharing uniformity
Gate Pad	Control input	Isolated gate terminal adjacent to Pin 1; requires low-inductance layout and external gate resistor placement on Driver Source (Pin 2)

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs d_iF/dt rating enables reliable hard-switched freewheeling without voltage spikes in PSFB converters
Low R_DS(on) tempco	R_DS(on) increases only ~1.5× from 25°C to 125°C - maintains stable current sharing and thermal stability in parallel configurations
Reduced E_oss	10.0 µJ at 400 V - cuts turn-on energy loss by >30% vs. prior CFD2 generation, directly improving LLC light-load efficiency
JEDEC industrial qualification	Full qualification per JESD47 and JESD22 - guarantees reliability for 10+ year field life in telecom rectifiers and server PSUs
Optimized gate charge split	Q_gd = 19 nC, Qgs = 19 nC - balanced Miller and input charge enables predictable, controllable switching transitions under varying load

Applications

Server PSU Primary Switch

Telecom Rectifier High-Side Switch

Use Scenario: 3.3 kW 48 V output server power supply using asymmetric half-bridge topology with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side primary switch handling 400 V DC bus and delivering up to 43 A continuous current with ZVS-assisted turn-on.

Use Value: 60 mΩ R_DS(on) and 10.0 µJ E_oss reduce conduction and capacitive losses, enabling >96.5% efficiency at 50% load.

Use Scenario: 48 V telecom rectifier operating from 380 V PFC output in -48 V distributed power architecture.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shift full-bridge stage, requiring robust body diode recovery during lagging-leg commutation.

Use Value: 1300 A/µs d_iF/dt and 212 ns max t_rr prevent voltage overshoot and ensure stable zero-voltage switching across line/load transients.

EV Onboard Charger (OBC) PFC + LLC Stage

Solar String Inverter DC-DC Isolation Stage

Use Scenario: Bidirectional OBC with dual active bridge (DAB) and LLC DC-DC stages operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and primary-side resonant switch in LLC half-bridge configuration.

Use Value: Ultra-low Q_rr (0.86 µC typ) and soft reverse recovery minimize reverse conduction loss and EMI during bidirectional power flow.

Use Scenario: 10 kW string inverter with two-stage conversion: MPPT boost followed by isolated full-bridge DC-DC stage feeding H-bridge inverter.

IC Role / Device Role / Timing Role: High-efficiency isolation stage switch in phase-shift full-bridge topology handling 1000 V DC link with 150 °C junction limit.

Use Value: 150 °C T_j rating and 0.5 °C/W R_thJC support compact heatsinking in outdoor-rated enclosures with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	Lower R_DS(on) (41 mΩ), higher Q_g (85 nC), same 650 V rating and CFD7 die	Better conduction loss but increased gate drive demand; suited for lower-frequency (<150 kHz) high-current PSUs	Select when thermal budget allows larger gate driver and priority is full-load efficiency over light-load performance
IPP65R095C7	CFD2-generation part; higher R_DS(on) (95 mΩ), slower d_iF/dt (700 A/µs), no driver source pin	Limited hard commutation capability; not qualified for new industrial designs requiring CFD7-level ruggedness	Only consider for legacy design refresh where board layout cannot accommodate PG-HSOF-8 pinout or driver source routing

Compared with IPW65R041CFD7 and IPP65R095C7, IPT65R060CFD7XTMA1 offers optimal balance of conduction loss, switching loss, and commutation robustness for 200–300 kHz resonant converters-making it the preferred choice for next-gen server, telecom, and EV charging platforms requiring JEDEC industrial reliability.

Availability

IPT65R060CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPT65R060CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in industrial and infrastructure applications where ZVS operation, thermal resilience, and hard commutation reliability are critical.

FAQ

Can IPT65R060CFD7XTMA1 be used in hard-switched topologies like conventional flyback or forward converters?

No-it is optimized for resonant (LLC, PSFB) and soft-switched applications. Its ultra-fast body diode and low E_oss deliver value only when operated with ZVS or quasi-resonant conditions. In hard-switched topologies, its gate charge profile and lack of avalanche rating beyond 164 mJ single-pulse make it unsuitable for repetitive hard switching stress.

What is the functional difference between Pin 1 (Source) and Pin 2 (Driver Source)?

Pin 1 is the main power source terminal carrying full load current; Pin 2 is a dedicated Kelvin sense connection for gate drive referencing. Swapping them causes gate loop instability, inaccurate threshold control, and potential shoot-through. Gate resistor placement must reference Pin 2-not Pin 1-to maintain clean switching waveforms during paralleling.

Does IPT65R060CFD7XTMA1 support paralleling, and what layout guidance applies?

Yes-its PG-HSOF-8 package and separate driver source (Pin 2) enable stable paralleling. Layout requires symmetrical high-current paths, individual gate resistors tied to Pin 2 (not gate pad), matched trace lengths, and shared thermal interface to a common heatsink. Avoid star-point grounding of sources to prevent circulating currents.

How does the CFD7 body diode compare to standard silicon MOSFETs in reverse recovery behavior?

It achieves 1300 A/µs d_iF/dt and 141–212 ns t_rr-over 2× faster than standard SJ MOSFETs-with soft, non-oscillatory recovery due to tailored charge compensation. This eliminates voltage spikes during hard commutation and reduces snubber requirements in PSFB and DAB topologies, unlike conventional devices that exhibit snap-off and ringing.

IPT65R060CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-3

IPT65R060CFD7XTMA1 FAQ

1.How can I place an order for IPT65R060CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R060CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R060CFD7XTMA1 reliable?

The price and inventory of IPT65R060CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R060CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R060CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R060CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R060CFD7XTMA1?

IPT65R060CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R060CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R060CFD7XTMA1?

For technical support, including IPT65R060CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R060CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT65R060CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R060CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R060CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R060CFD7XTMA1?

All IPT65R060CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R060CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R060CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R060CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …