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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R080CFD7XTMA1

Name: IPT65R080CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT65R080CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT65R080CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R080CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPT65R080CFD7XTMA1 from Infineon is a 650 V, 80 mΩ ultra-fast body diode Superjunction MOSFET in PG-HSOF-8 package with internal Kelvin source connection (Driver Source Pin 2, Source Pins 3–8), optimized for zero-voltage switching topologies including LLC and phase-shift full-bridge converters in server power supplies and EV charging stations.

For engineers reviewing the IPT65R080CFD7XTMA1 datasheet, IPT65R080CFD7XTMA1 pinout, IPT65R080CFD7XTMA1 application, or IPT65R080CFD7XTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, di_F/dt rating of 1300 A/µs, E_oss of 7.8 µJ at 400 V, Q_g of 50 nC, and thermal resistance R_thJC = 0.62 °C/W - all critical for high-efficiency resonant SMPS design.

Technical Context

This CoolMOS™ CFD7 device implements a charge-compensated superjunction structure with integrated fast-recovery body diode (t_rr = 132–198 ns, Q_rr = 0.73–1.46 µC) and hard commutation ruggedness validated to 1300 A/µs di_F/dt. Its gate plateau voltage is 5.7 V at 400 V V_DD, supporting robust drive in high-dV/dt environments.

The PG-HSOF-8 package features an exposed drain tab for low-inductance, high-current PCB mounting and separates Driver Source (Pin 2) from main Source (Pins 3–8) to minimize source inductance in high-frequency switching. Gate resistance is specified at 6 Ω (1 MHz, open drain), enabling precise gate loop tuning.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated for industrial 400 V bus systems with 15% overvoltage margin (700 V transient rating)
R_DS(on) max	80 mΩ @ T_j = 150°C - enables <34 A continuous current at 100°C case temperature with low conduction loss
Q_g typ	50 nC - determines gate drive power requirement and switching speed in ZVS circuits
E_oss	7.8 µJ @ 400 V - directly impacts turn-on energy loss and soft-switching boundary in LLC designs
di_F/dt max	1300 A/µs - quantifies hard-switching robustness during reverse recovery, critical for phase-shift FB reliability
R_thJC	0.62 °C/W - enables >200 W power dissipation with modest heatsinking at T_C = 25°C
t_rr	132–198 ns @ 400 V - defines dead-time requirements and EMI generation during body diode commutation

Pinout & Package

Package: PG-HSOF-8 - surface-mount, thermally enhanced SO-8 variant with exposed drain tab (Tab) for direct PCB copper cooling and Kelvin source configuration.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main Drain terminal	Exposed metal pad for low-inductance, high-current drain connection and thermal path to PCB
Pin 1	Source (main)	Primary source connection for power return path (pins 3–8 are paralleled with Pin 1)
Pin 2	Driver Source (Kelvin)	Dedicated low-inductance source reference for gate driver feedback - not interchangeable with Pin 1
Pin 3–8	Source (main)	Parallel source terminals sharing same internal node as Pin 1; used for current distribution and thermal spreading
Gate	Control input	Standard MOSFET gate terminal; requires external gate resistor placed on Driver Source (Pin 2) for optimal ringing control

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs di_F/dt rating and 132–198 ns t_rr enable reliable hard commutation without snubbers in PSFB
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 150°C - maintains stable conduction loss across operating range
Reduced E_oss	7.8 µJ at 400 V - lowers turn-on loss and extends ZVS operating range in LLC converters up to 300 kHz
Kelvin source configuration	Separate Driver Source (Pin 2) eliminates source inductance impact on gate drive waveform fidelity
JEDEC industrial qualification	Fully qualified per JEDEC JESD47 - supports 150°C junction operation and long-term reliability in telecom/server SMPS

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter delivering 12 V/200 A output.

IC Role / Device Role / Timing Role: High-side resonant switch operating at 250–300 kHz with ZVS turn-on and controlled body diode commutation.

Use Value: 80 mΩ R_DS(on) and 7.8 µJ E_oss reduce total losses by 1.2 W vs. CFD2 generation, improving efficiency from 96.3% to 96.7% at full load.

Use Scenario: Primary switch in 2.5 kW phase-shift full-bridge rectifier for -48 V telecom systems.

IC Role / Device Role / Timing Role: Hard-commutated high-side switch requiring robust di_F/dt capability during lagging-leg transitions.

Use Value: 1300 A/µs di_F/dt rating prevents dynamic avalanche failure under 100 A/µs system-level commutation stress.

EV DC Fast Charging

Solar Inverter Stage

Use Scenario: Interleaved PFC + LLC stage in 20 kW bi-directional EV charger handling 800 V battery interface.

IC Role / Device Role / Timing Role: Resonant switch in LLC half-bridge with 400–600 V bus and 150 kHz switching frequency.

Use Value: 0.62 °C/W R_thJC allows 100% load operation at 85°C ambient without derating when mounted on 6 cm² copper area.

Use Scenario: Primary-side switch in 10 kW string inverter LLC stage converting 600–1000 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: High-voltage resonant switch subjected to repeated 650 V blocking and fast body diode recovery.

Use Value: 650 V V_(BR)DSS with 700 V transient rating provides 20% safety margin against line surges in ungrounded PV systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095C7	95 mΩ R_DS(on), 42 nC Q_g, same PG-HSOF-8 package, no Kelvin source	Lacks Driver Source pin - unsuitable for gate drive loop optimization in high-di/dt layouts	Prefer where cost sensitivity outweighs ZVS margin and layout complexity is low
IPP65R095C7	95 mΩ R_DS(on), TO-220FP package, 45 nC Q_g, standard source configuration	Higher R_thJA (35–45 °C/W) limits power density; no Kelvin source or exposed drain tab	Select only for lower-power (<1.5 kW), non-ZVS, or retrofit applications with legacy footprint

Compared with IPW65R095C7 and IPP65R095C7, IPT65R080CFD7XTMA1 delivers 19% lower conduction loss, 19% higher di_F/dt ruggedness, and Kelvin-source-enabled gate control - making it the only choice for high-density, high-reliability 2–20 kW resonant SMPS where layout-induced ringing and thermal management are critical.

Availability

IPT65R080CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV DC fast charging systems requiring stable component supply, long-lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPT65R080CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CFD7 family - engineered specifically for high-efficiency, high-power-density resonant converters in industrial and infrastructure applications where ZVS operation, body diode ruggedness, and thermal performance are decisive.

FAQ

Can IPT65R080CFD7XTMA1 be used in hard-switched topologies like conventional flyback or forward converters?

No - this device is optimized for zero-voltage switching (ZVS) topologies such as LLC and phase-shift full-bridge. Its ultra-fast body diode and low E_oss provide no benefit in hard-switched applications, and its gate charge profile is tuned for resonant gate drive timing. Use standard CoolMOS™ CFD or SPP series instead for hard-switched designs.

What is the functional difference between Pin 2 (Driver Source) and Pins 3–8 (Source)?

Pin 2 is the Kelvin source connection for gate driver feedback, carrying only sensing current (nA–µA level); Pins 3–8 are main power source terminals carrying full load current (up to 34 A continuous). Swapping them causes gate drive instability and potential device failure due to source inductance coupling into the gate loop.

Is the PG-HSOF-8 package lead-free and RoHS-compliant?

Yes - IPT65R080CFD7XTMA1 uses lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package is qualified for lead-free reflow soldering up to 260°C (MSL1), with no post-soldering annealing required.

How does the 1300 A/µs di_F/dt rating translate to real-world layout requirements?

This rating requires strict minimization of source loop inductance: keep Driver Source (Pin 2) trace short and direct to gate driver ground, avoid shared source paths between multiple devices, and use symmetric Kelvin routing. Layouts exceeding 5 nH source inductance will fail to sustain this di_F/dt without dynamic avalanche.

IPT65R080CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-3

IPT65R080CFD7XTMA1 FAQ

1.How can I place an order for IPT65R080CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R080CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R080CFD7XTMA1 reliable?

The price and inventory of IPT65R080CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R080CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R080CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R080CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R080CFD7XTMA1?

IPT65R080CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R080CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R080CFD7XTMA1?

For technical support, including IPT65R080CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R080CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT65R080CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R080CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R080CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R080CFD7XTMA1?

All IPT65R080CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R080CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R080CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R080CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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