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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R099CFD7XTMA1

Name: IPT65R099CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT65R099CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT65R099CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R099CFD7XTMA1.pdf

Description:: MOSFET N-CH 650V 8HSOF

Quantity:: RFQ Add To RFQ list

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Inventory:1,995

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Product details

Overview

IPT65R099CFD7XTMA1 from Infineon is a 650 V superjunction MOSFET in PG-HSOF-8 package with 99 mΩ max R_DS(on), 39 nC typical gate charge, and ultra-fast body diode (di_F/dt = 1300 A/µs). It serves as a primary-side switching device in resonant topologies-LLC and phase-shift full-bridge-with ZVS operation, delivering high efficiency in server power supplies and EV charging stations.

For engineers reviewing the IPT65R099CFD7XTMA1 datasheet, IPT65R099CFD7XTMA1 pinout, IPT65R099CFD7XTMA1 application, or IPT65R099CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), E_oss (6.1 µJ at 400 V), and dedicated source-sense pin configuration for accurate gate drive control in paralleled configurations.

Technical Context

This CoolMOS™ CFD7 device implements a charge-compensated superjunction structure enabling 650 V breakdown while maintaining low conduction and switching losses. Its internal fast-recovery body diode (t_rr = 113–170 ns, Q_rr = 0.6–1.2 µC) and high dv/dt ruggedness (120 V/ns) support reliable ZVS turn-on in high-frequency resonant converters.

The PG-HSOF-8 package integrates a drain-exposed thermal tab and separates driver source (Pin 2) from power source (Pins 3–8), enabling Kelvin-source sensing to suppress gate oscillation and improve switching stability under high di/dt conditions. Gate plateau voltage is fixed at 5.7 V, optimizing drive timing across load and temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V bus designs with 1.6× safety margin against transients in industrial SMPS.
R_DS(on) max @ 150°C	99 mΩ - Enables <28 A continuous current at T_C = 100°C without derating beyond thermal limits.
Q_g typ	39 nC - Reduces gate driver power loss and allows use of lower-cost 13 V gate drivers in ZVS applications.
E_oss @ 400 V	6.1 µJ - Low stored output capacitance energy minimizes turn-on loss in LLC resonant tanks.
di_F/dt max	1300 A/µs - Ensures robust hard-switching capability during reverse recovery in phase-shifted full-bridge.
R_thJC	0.75 °C/W - Enables high-power density layout with direct heatsink mounting via exposed drain tab.
t_rr typ	113 ns - Limits reverse recovery overshoot and EMI generation during synchronous rectification transitions.

Pinout & Package

PG-HSOF-8 is a surface-mount, thermally enhanced package with an exposed drain tab on the underside and eight leads arranged in a single row. The package supports high-current handling and low-inductance source sensing via dedicated pins.

Pin/Terminal	Circuit Role	Design Meaning
Drain tab	Power Drain / Thermal Path	Primary current return path and main thermal interface to heatsink; electrically connected to all drain pins.
Pin 1	Gate	Control input; requires external gate resistor placed at Driver Source (Pin 2), not Gate, for optimal ringing suppression.
Pin 2	Driver Source (Sense Source)	Kelvin connection for gate drive return; must not be swapped with Power Source (Pins 3–8) to avoid regulation error.
Pins 3–8	Power Source	High-current source return path; paralleled for low-inductance conduction but not for sensing.

Key Features

Feature	Design Value
Ultra-fast body diode	di_F/dt = 1300 A/µs enables reliable hard commutation in asymmetric half-bridge and PSFB without snubbers.
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 150°C - maintains stable current sharing in parallel configurations.
Integrated ESD protection	Qualified to >2 kV HBM - eliminates need for external TVS on gate in board-level ESD-prone environments.
Optimized for ZVS	E_oss = 6.1 µJ at 400 V reduces turn-on loss by >35% vs. prior CFD2 generation in 100–300 kHz LLC designs.
JEDEC industrial qualification	Validated per JESD47 - supports 15-year field life in telecom rectifiers and solar inverters operating at T_j ≤ 125°C.

Applications

Server PSU

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter operating at 250 kHz with 54 V output.

IC Role / Device Role / Timing Role: High-side ZVS switch with controlled di_F/dt to minimize circulating current loss during dead-time.

Use Value: Achieves >96.8% full-load efficiency and <15 dBμV conducted EMI reduction vs. CFD2 due to lower Q_rr and E_oss.

Use Scenario: Main switch in 48 V/3 kW telecom rectifier using phase-shift full-bridge topology with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Hard-commutated lagging-leg switch requiring robust body diode recovery under high di/dt.

Use Value: Eliminates need for external anti-parallel SiC Schottky by sustaining 1300 A/µs di_F/dt without failure over 10⁶ cycles.

EV DC Fast Charger

Solar Inverter Stage

Use Scenario: Input stage switch in 15 kW bi-directional OBC with interleaved dual-phase LLC.

IC Role / Device Role / Timing Role: Synchronized switching element with Kelvin source sensing to maintain gate voltage accuracy under 500 A peak di/dt.

Use Value: Enables 97.2% peak efficiency at 200 V_bus and extends thermal margin by 12°C vs. standard superjunction MOSFETs.

Use Scenario: DC-link switch in 10 kW string inverter's two-level NPC topology operating at 16 kHz.

IC Role / Device Role / Timing Role: High-voltage switching device with low C_oss (32 pF) to reduce capacitive turn-off loss during reactive power cycling.

Use Value: Reduces switching loss by 22% at 600 V DC link compared to 600 V Si IGBTs, improving inverter efficiency at partial load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7XKSA1	TO-247-4 package; identical die, higher R_thJC (0.95 °C/W); no Kelvin source pin.	Preferred for prototyping and lower-volume industrial UPS where PCB space permits larger through-hole footprint.	Select when thermal interface simplicity outweighs PCB area constraints and Kelvin sensing is unnecessary.
IPP65R099CFD7XKSA1	PG-TO220-3 package; same R_DS(on) and Q_g, but no sense source; R_thJC = 1.1 °C/W.	Suitable for cost-sensitive 1–2 kW adapters where ZVS margin is relaxed and EMI filtering budget is higher.	Choose only if design operates below 120 kHz and does not require hard commutation validation per JEDEC JESD22-A108.

Compared with IPW65R099CFD7XKSA1 and IPP65R099CFD7XKSA1, IPT65R099CFD7XTMA1 uniquely delivers Kelvin-source control, lowest R_thJC, and highest di_F/dt rating-making it the sole choice for production-grade, high-density, ZVS-critical 3+ kW server and EV charger platforms.

Availability

IPT65R099CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV DC fast chargers requiring stable component supply, long-term lifecycle assurance, and validated industrial reliability.

Supply support for IPT65R099CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power systems, automotive MCUs, and security solutions, with over 30 years of high-voltage power device innovation.

This part belongs to the CoolMOS™ CFD7 family-designed specifically for zero-voltage-switching resonant converters demanding ultra-low E_oss, fast body diode recovery, and industrial-grade ruggedness in compact form factors.

FAQ

Can IPT65R099CFD7XTMA1 replace IPT65R099CFD2 in existing designs?

Yes, with minor layout review: both share identical PG-HSOF-8 footprint and pinout, but CFD7 offers 18% lower E_oss and 25% faster di_F/dt. Gate drive timing may require slight RG adjustment due to reduced Q_gd. No changes to thermal pad or source routing are needed.

Why must Driver Source (Pin 2) and Power Source (Pins 3–8) not be exchanged?

Swapping them breaks Kelvin sensing: Pin 2 returns gate drive current separately to reject source inductance voltage drop, while Pins 3–8 carry high di/dt load current. Exchange causes gate underdrive, erratic switching, and potential shoot-through in bridge configurations.

What is the maximum recommended gate resistor value for ZVS operation at 300 kHz?

For reliable ZVS in LLC at 300 kHz, RG should be ≤ 5.3 Ω (per datasheet test condition). Higher values increase turn-on time and risk incomplete ZVS; lower values (<3.3 Ω) may cause gate ringing. Use non-inductive SMD resistors mounted directly at Pin 2.

Does this MOSFET require external gate clamping diodes?

No. The integrated ESD diode (2 kV HBM rated) and 30 V dynamic gate-source rating (V_GS max = ±30 V) provide sufficient transient protection. External clamps add parasitic capacitance and degrade t_r/t_f; they are unnecessary unless system-level surge testing exceeds IEC 61000-4-5 Level 4.

IPT65R099CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT65R099CFD7XTMA1 FAQ

1.How can I place an order for IPT65R099CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R099CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R099CFD7XTMA1 reliable?

The price and inventory of IPT65R099CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R099CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R099CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R099CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R099CFD7XTMA1?

IPT65R099CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R099CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R099CFD7XTMA1?

For technical support, including IPT65R099CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R099CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT65R099CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R099CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R099CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R099CFD7XTMA1?

All IPT65R099CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R099CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R099CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R099CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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