Infineon Technologies IPT65R125CFD7XTMA1

Overview

IPT65R125CFD7XTMA1 from Infineon is a 650 V superjunction N-channel MOSFET in PG-HSOF-8 package with integrated fast body diode and ESD protection. It delivers 125 mΩ max R_DS(on), 32 nC typical gate charge, and 1300 A/µs diode commutation speed, optimized for zero-voltage switching (ZVS) topologies including LLC resonant converters and phase-shift full-bridge circuits in server power supplies and EV charging stations.

For engineers reviewing the IPT65R125CFD7XTMA1 datasheet, IPT65R125CFD7XTMA1 pinout, IPT65R125CFD7XTMA1 application, or IPT65R125CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), ultra-fast body diode recovery (105–158 ns), and thermal resistance of 0.89 °C/W (junction-to-case).

Technical Context

This CoolMOS™ CFD7 device uses charge compensation technology to achieve high voltage blocking (650 V) with low conduction loss and reduced switching energy (E_oss = 5.0 µJ at 400 V). Its internal fast body diode enables reliable operation under hard commutation stress without external snubbers.

The PG-HSOF-8 package features an exposed drain tab for direct heatsinking and separates driver source (pins 2) from power source (pins 3–8), preventing ground loop errors. Gate resistance is specified at 6 Ω (1 MHz), supporting precise gate drive tuning for ZVS timing control.

Key Specifications

Pinout & Package

Package: PG-HSOF-8 (Plastic Gull-wing Source-Down, Exposed Drain Tab), surface-mount, thermally enhanced layout with isolated driver source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R125CFD7 and IPP65R125CFD7, IPT65R125CFD7XTMA1 uniquely combines SMD manufacturability, driver-source isolation, and 0.89 °C/W thermal resistance-making it optimal for space-constrained, high-frequency ZVS power stages requiring production scalability and EMI resilience.

Availability

IPT65R125CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.

Supply support for IPT65R125CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters in datacenter, telecom, and renewable energy infrastructure.

FAQ

Can IPT65R125CFD7XTMA1 replace older CoolMOS™ CFD2 devices in existing designs?

Yes, it is a direct successor to the 650 V CFD2 series with identical pinout and improved R_DS(on), switching loss, and body diode performance. No layout changes are needed, but gate resistor values may require minor adjustment due to lower Q_g (32 nC vs. ~38 nC in CFD2) to maintain optimal dv/dt control.

Why does the datasheet specify separate Driver Source (Pin 2) and Power Source (Pins 3–8)?

Pin 2 provides a dedicated Kelvin connection for the gate driver's return path, eliminating voltage drop from high di/dt source current that would otherwise distort gate drive waveforms. Pins 3–8 carry bulk source current only, reducing gate loop inductance and preventing false turn-on during hard commutation.

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

Based on measured td(off) = 95 ns and tr = 8 ns with RG = 10.2 Ω, the optimal RG range is 8–12 Ω for 200–300 kHz operation. Values above 15 Ω increase turn-off delay excessively, risking overlap conduction; below 5 Ω risks gate ringing due to low C_iss/C_oss ratio (1566 pF / 26 pF).

Is the exposed drain tab electrically isolated from other pins?

Yes-the drain tab is internally connected only to the MOSFET drain terminal and is electrically isolated from all pins (including source and gate). It must be soldered to a PCB copper pour tied to system ground or heatsink potential, but no additional insulation is required unless high-voltage creepage rules mandate spacing.