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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R155CFD7XTMA1

Name: IPT65R155CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT65R155CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT65R155CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R155CFD7XTMA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPT65R155CFD7XTMA1 from Infineon is a 650 V superjunction N-channel MOSFET in PG-HSOF-8 package with integrated fast body diode, R_DS(on) = 155 mΩ (max), Q_g = 27 nC (typ), and 1300 A/µs di_F/dt rating. It is engineered for zero-voltage switching (ZVS) topologies including LLC resonant converters and phase-shift full-bridge circuits in high-efficiency industrial SMPS.

For engineers reviewing the IPT65R155CFD7XTMA1 datasheet, IPT65R155CFD7XTMA1 pinout, IPT65R155CFD7XTMA1 application, or IPT65R155CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), E_oss = 4.2 µJ at 400 V, and gate-source voltage rating up to ±30 V (dynamic).

Technical Context

This CoolMOS™ CFD7 device implements a charge-compensated superjunction structure enabling ultra-low R_DS(on) × area while maintaining robust dv/dt immunity (120 V/ns) and fast reverse recovery (t_rr = 95–143 ns). Its internal body diode supports high di_F/dt (1300 A/µs), critical for ZVS turn-on in high-frequency resonant converters.

The PG-HSOF-8 package features an exposed drain tab for low thermal resistance (R_thJC = 1.02 °C/W) and separate source-sense (S) and driver-source (DS) pins to minimize gate loop inductance and improve switching control fidelity-essential for stable operation above 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated for 400 V bus applications with 1.6× safety margin against transient overvoltage in telecom/server PSUs.
R_DS(on) max	155 mΩ at T_j = 25°C - enables <1.5 W conduction loss at 12 A DC, supporting compact heatsink designs.
Q_g typ	27 nC - reduces gate drive power requirement and allows use of lower-cost drivers in 100–300 kHz LLC controllers.
E_oss	4.2 µJ at 400 V - minimizes turn-off energy loss and improves efficiency in soft-switching topologies.
di_F/dt max	1300 A/µs - ensures reliable body diode commutation during hard-switching events in asymmetric half-bridge configurations.
t_rr	95–143 ns - limits reverse recovery overshoot and EMI generation in high-dV/dt ZVS transitions.
R_thJC	1.02 °C/W - supports >120 W continuous power dissipation with moderate heatsinking at T_C = 100°C.

Pinout & Package

Package: PG-HSOF-8 (exposed drain tab, surface-mount, 8-pin leadless). Pin 1 is Gate; Pins 3–8 are Power Source (common source); Pin 2 is Driver Source (Kelvin source sense); Drain is connected to the bottom thermal tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOSFET channel; requires low-inductance gate drive path to suppress oscillation.
Pins 3–8	Power Source	Main current return path; carries full load current but not used for gate loop sensing.
Pin 2	Driver Source (Kelvin)	Reference node for gate drive circuitry; isolates gate loop from power source noise to improve switching stability.
Drain Tab	Drain	Exposed metal pad on underside; primary thermal path and high-current drain connection point.

Key Features

Feature	Design Value
Ultra-fast body diode	1300 A/µs di_F/dt and 95 ns t_rr enable reliable ZVS turn-on without external snubbers in LLC converters.
Low R_DS(on) temperature drift	R_DS(on) increases only ~1.8× from 25°C to 150°C - maintains predictable conduction loss across industrial ambient range.
Integrated ESD protection	Qualified to HBM Class 2 (≥2 kV) - eliminates need for external gate protection in board-level ESD environments.
Optimized for ZVS topologies	E_oss = 4.2 µJ and C_oss = 22 pF reduce turn-off loss and enable efficient operation at 300–700 kHz switching frequencies.
Separate Kelvin source	Pin 2 (Driver Source) decouples gate drive reference from high-di/dt power return, preventing false turn-off during fast transients.

Applications

Server PSU

Telecom Rectifier

Use Scenario: 3 kW, 48 V output, digitally controlled LLC resonant converter operating at 350 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetrical half-bridge configuration with synchronous rectification on secondary.

Use Value: 155 mΩ R_DS(on) and 4.2 µJ E_oss deliver >96.8% peak efficiency at 50% load, reducing cooling requirements by 22% vs. CFD2 generation.

Use Scenario: 48 V/60 A telecom rectifier with phase-shift full-bridge topology and adaptive dead-time control.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during ZVS transitions; body diode conducts freewheeling current.

Use Value: 1300 A/µs di_F/dt rating prevents diode failure during rapid current reversal, extending MTBF beyond 100,000 hours.

EV Onboard Charger

Solar String Inverter

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using dual-phase interleaved LLC with GaN-assisted hybrid switching.

IC Role / Device Role / Timing Role: High-voltage clamp switch managing bus overvoltage during regenerative braking events.

Use Value: 700 V V_DS@T_j,max rating provides 20% headroom above 600 V DC link, eliminating need for external TVS clamping.

Use Scenario: 10 kW string inverter DC/AC stage with three-level NPC topology operating at 16 kHz fundamental switching frequency.

IC Role / Device Role / Timing Role: Upper-leg switch in NPC leg; body diode handles reactive current during modulation dead-time intervals.

Use Value: 1.02 °C/W R_thJC enables direct mounting to aluminum baseplate, reducing junction-to-ambient ΔT by 18°C vs. TO-247 packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7	R_DS(on) = 95 mΩ (lower), Q_g = 42 nC (higher), same PG-HSOF-8 package and CFD7 die.	Better conduction loss but higher gate drive loss; suited for <200 kHz operation where switching loss is secondary.	Select when optimizing for light-load efficiency in fixed-frequency PFC stages.
IPP65R190CFD7	R_DS(on) = 190 mΩ (higher), Q_g = 21 nC (lower), identical thermal and diode specs.	Lower switching loss and reduced gate drive demand; trade-off is +22% conduction loss at full load.	Select when prioritizing EMI reduction and gate driver simplicity in space-constrained telecom modules.

Compared with IPW65R095CFD7 and IPP65R190CFD7, IPT65R155CFD7XTMA1 delivers optimal balance between conduction and switching losses across 200–500 kHz LLC operation, with proven reliability in JEDEC-qualified industrial environments.

Availability

IPT65R155CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified production lines.

Supply support for IPT65R155CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, designed specifically for high-efficiency, high-power-density resonant and soft-switching power conversion systems operating at 650 V class.

FAQ

What is the maximum continuous drain current rating for IPT65R155CFD7XTMA1?

The maximum continuous drain current is 19 A at T_C = 25°C and derates to 12 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C). This rating assumes proper PCB copper area (6 cm² drain pad) and vertical mounting without forced airflow, per Infineon's thermal test conditions.

Can Pin 2 (Driver Source) be connected to the same net as Pins 3–8 (Power Source)?

No-Pin 2 must remain isolated from Pins 3–8. Connecting them defeats the Kelvin source function, introducing gate loop inductance that causes oscillation and false turn-off during high-di/dt switching. The datasheet explicitly warns that interchange leads to malfunction.

Is IPT65R155CFD7XTMA1 suitable for hard-switched PFC applications?

It is not recommended for continuous hard-switched boost PFC due to its optimized body diode characteristics for ZVS-not hard commutation. For hard-switched PFC, Infineon recommends CFD2 or CE variants with higher di_F/dt tolerance and lower Q_rr variation across temperature.

What is the gate plateau voltage and why does it matter for gate driver selection?

The gate plateau voltage is 5.7 V (typical), measured during Miller region transition. This value determines the minimum gate drive voltage needed to sustain full enhancement; drivers must supply ≥6 V with sufficient current (>1 A peak) to cross the plateau quickly and minimize switching time in high-frequency LLC designs.

IPT65R155CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-3

IPT65R155CFD7XTMA1 FAQ

1.How can I place an order for IPT65R155CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R155CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R155CFD7XTMA1 reliable?

The price and inventory of IPT65R155CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R155CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R155CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R155CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R155CFD7XTMA1?

IPT65R155CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R155CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R155CFD7XTMA1?

For technical support, including IPT65R155CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R155CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT65R155CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R155CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R155CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R155CFD7XTMA1?

All IPT65R155CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R155CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R155CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R155CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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