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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT65R190CFD7XTMA1

Name: IPT65R190CFD7XTMA1
Brand: Infineon Technologies
SKU: IPT65R190CFD7XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT65R190CFD7XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT65R190CFD7XTMA1.pdf

Description:: MOSFET N-CH 650V 8HSOF

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Product details

Overview

IPT65R190CFD7XTMA1 from Infineon is a 650 V superjunction N-channel MOSFET in PG-HSOF-8 package, featuring 190 mΩ max R_DS(on), 22 nC typical gate charge, and ultra-fast body diode with 1300 A/µs di_F/dt capability. It is engineered for zero-voltage switching (ZVS) topologies including LLC resonant converters and phase-shift full-bridge circuits in industrial SMPS, server power supplies, telecom rectifiers, and EV charging stations.

For engineers reviewing the IPT65R190CFD7XTMA1 datasheet, IPT65R190CFD7XTMA1 pinout, IPT65R190CFD7XTMA1 application, or IPT65R190CFD7XTMA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), E_oss of 3.5 µJ at 400 V, and validated JEDEC industrial qualification up to 150 °C junction temperature.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balance and integrated fast-recovery body diode. Its 700 V absolute maximum drain-source voltage rating supports 400–450 V bus designs with safety margin, while the 1.18 °C/W R_thJC enables high-power-density thermal management in compact SMD layouts.

The gate plateau voltage of 5.7 V and low Q_gd/Q_g ratio (7/22 nC) ensure robust turn-off control under high dv/dt conditions. Dynamic parameters-including 17 ns turn-on delay, 80 ns turn-off delay, and Co(er) = 43 pF-support precise timing in resonant controllers operating above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Withstands transient overvoltage spikes in 400 V DC bus systems without avalanche stress.
R_DS(on) max	190 mΩ @ T_j = 25 °C - Enables low conduction loss in high-current primary-side switches.
Q_g typ	22 nC - Reduces gate drive power requirement and allows use with standard 1–2 A peak gate drivers.
E_oss	3.5 µJ @ 400 V - Low output capacitance energy minimizes dead-time losses in ZVS operation.
di_F/dt max	1300 A/µs - Supports reliable hard commutation in asymmetric half-bridge and PSFB topologies.
T_j max	150 °C - Fully qualified per JEDEC JESD47 for continuous industrial operation.
R_thJC	1.18 °C/W - Enables direct heatsink mounting via drain tab for efficient thermal path in >1 kW designs.

Pinout & Package

Package: PG-HSOF-8 - surface-mount, thermally enhanced 8-pin SO-style package with exposed drain tab on underside for direct PCB heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain tab	Main current path (high-side or low-side switch node)	Exposed copper pad soldered to large PCB copper area; primary thermal and electrical return path.
Pin 1	Gate	Control input; requires gate resistor placement on Driver Source (Pin 2), not Gate, when paralleling devices.
Pin 2	Driver Source	Source reference for gate driver IC feedback loop; not interchangeable with Power Source (Pins 3–8).
Pins 3–8	Power Source	Parallel source terminals carrying main load current; must be routed with equal impedance to avoid current imbalance.

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 97–145 ns, Q_rr = 0.44–0.88 µC - Reduces reverse recovery loss and EMI in hard-switched synchronous rectification.
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 150 °C - Maintains stable conduction loss across wide ambient range.
High dv/dt ruggedness	120 V/ns (MOSFET), 70 V/ns (diode) - Prevents false turn-on during high-speed switching in multi-kW inverters.
JEDEC industrial qualification	Tested per JESD47 - Guarantees reliability for 10+ year field life in telecom and server power applications.
Optimized for ZVS	E_oss = 3.5 µJ @ 400 V, Co(er) = 43 pF - Enables >96% efficiency in LLC converters at 200–500 kHz switching frequency.

Applications

Server PSU Primary Switch

Telecom Rectifier Stage

Use Scenario: High-efficiency 3.3 kW front-end LLC resonant converter in 1U server power supply.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating in ZVS mode at 300 kHz with 400 V nominal bus.

Use Value: 190 mΩ R_DS(on) and 3.5 µJ E_oss reduce total switching + conduction loss by 12% vs. prior CFD2 generation at full load.

Use Scenario: 2 kW isolated DC/DC module for 48 V telecom base station power distribution.

IC Role / Device Role / Timing Role: Phase-shift full-bridge (PSFB) primary switch with synchronous rectification on secondary side.

Use Value: 1300 A/µs di_F/dt rating ensures reliable commutation during lagging-leg transitions under 100% load step.

EV Onboard Charger (OBC)

Solar String Inverter Stage

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using dual-active-bridge (DAB) topology.

IC Role / Device Role / Timing Role: High-side switch in DAB primary bridge handling 400–800 V DC link with soft switching.

Use Value: 700 V V_DS rating provides 25% overvoltage margin for regenerative braking transients up to 620 V.

Use Scenario: MPPT boost stage in 10 kW string inverter interfacing 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 100 kHz with unidirectional current flow.

Use Value: Low Q_g (22 nC) and 1.18 °C/W R_thJC allow 98.2% peak efficiency while maintaining <105 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095C7	R_DS(on) = 95 mΩ (lower), Q_g = 42 nC (higher), same PG-HSOF-8 package	Better conduction loss but higher gate drive loss; requires stronger gate driver	Select when system prioritizes full-load efficiency over light-load performance and gate drive complexity.
STW65N6F6	R_DS(on) = 125 mΩ, Q_g = 28 nC, TO-247 package (not SMD)	Larger footprint, higher R_thJA, no integrated fast diode	Choose only if existing thermal design uses through-hole mounting or legacy layout constraints prohibit SMD adoption.

Compared with IPW65R095C7 and STW65N6F6, IPT65R190CFD7XTMA1 delivers optimal balance of switching speed, conduction loss, and SMD thermal performance for new ZVS-based industrial power designs requiring JEDEC-qualified reliability and compact board area.

Availability

IPT65R190CFD7XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC industrial qualification, and thermally efficient SMD packaging.

Supply support for IPT65R190CFD7XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, designed specifically for high-efficiency, high-power-density resonant and soft-switching power conversion in industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current for IPT65R190CFD7XTMA1 at 100 °C case temperature?

The maximum continuous drain current is 10 A at T_C = 100 °C, limited by junction temperature (T_j ≤ 150 °C). This rating assumes proper PCB copper area (6 cm²) and vertical mounting per datasheet thermal test condition. Derating is required beyond 100 °C case temperature due to R_DS(on) increase and thermal resistance limits.

Can the Driver Source (Pin 2) and Power Source (Pins 3–8) be interchanged in layout?

No - the Driver Source (Pin 2) and Power Source (Pins 3–8) are functionally distinct and not interchangeable. Pin 2 serves as the Kelvin source reference for gate driver feedback; swapping it with power source pins introduces gate loop inductance that causes oscillation and false turn-on. Layout must maintain separate low-inductance paths for each.

Is IPT65R190CFD7XTMA1 suitable for hard-switched PFC boost stages?

Yes - its 120 V/ns MOSFET dv/dt ruggedness, 1300 A/µs di_F/dt rating, and low Q_rr (0.44–0.88 µC) make it viable for continuous-conduction-mode (CCM) PFC, though it is optimized for ZVS topologies. For hard-switched PFC, ensure gate drive strength ≥2 A peak and snubber design accounts for E_oss = 3.5 µJ.

Does this MOSFET require external gate resistors when used in parallel configurations?

Yes - Infineon explicitly recommends placing individual gate resistors on the Driver Source (Pin 2), not the Gate (Pin 1), for paralleled devices. This configuration suppresses gate oscillation caused by mutual inductance between parallel sources and ensures balanced dynamic current sharing during switching transitions.

IPT65R190CFD7XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-2

IPT65R190CFD7XTMA1 FAQ

1.How can I place an order for IPT65R190CFD7XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT65R190CFD7XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT65R190CFD7XTMA1 reliable?

The price and inventory of IPT65R190CFD7XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT65R190CFD7XTMA1 is usually 5 days.

3.What payment methods are accepted for IPT65R190CFD7XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT65R190CFD7XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT65R190CFD7XTMA1?

IPT65R190CFD7XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT65R190CFD7XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT65R190CFD7XTMA1?

For technical support, including IPT65R190CFD7XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT65R190CFD7XTMA1 requirements.

6.How does Aetrix verify that IPT65R190CFD7XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPT65R190CFD7XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT65R190CFD7XTMA1 meets industry standards.

7.What is the process for return or replacement of IPT65R190CFD7XTMA1?

All IPT65R190CFD7XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT65R190CFD7XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT65R190CFD7XTMA1 part is unused and in its original packaging.

Return procedure for IPT65R190CFD7XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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