Infineon Technologies IPTC012N06NM5ATMA1

Overview

IPTC012N06NM5 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-HDSOP-16 package, rated for 60 V V_DS, 1.2 mΩ R_DS(on) max at V_GS = 10 V, 311 A continuous drain current at T_C = 25 °C, and 175 °C junction temperature. It is optimized for high-current motor drives and battery-powered industrial inverters with top-side cooling capability.

For engineers reviewing the IPTC012N06NM5 datasheet, IPTC012N06NM5 pinout, IPTC012N06NM5 application, or IPTC012N06NM5 equivalent, key selection criteria include low R_DS(on) for conduction loss reduction, Q_g = 106 nC and Q_oss = 119 nC for hard-switching efficiency, and validated 420 mJ single-pulse avalanche energy for robustness in inductive load switching.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 2.1–3.3 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers, and its 1.6–2.4 Ω gate resistance supports controlled dV/dt without external gate resistors in many designs.

The PG-HDSOP-16 package integrates a thermally enhanced exposed drain tab (Pins 9–16 + Tab) and dual-source leads (Pins 1–7), enabling asymmetric thermal path design: Ψ_JL = 3 °C/W to drain leads and 9 °C/W to source leads. This supports efficient top-side cooling in space-constrained motor control modules.

Key Specifications

Pinout & Package

PG-HDSOP-16 is a thermally optimized surface-mount package with exposed drain tab and dual-source lead configuration. Drain terminals occupy Pins 9–16 and the integrated metal tab; Gate connects to Pin 8; Source connects to Pins 1–7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IPB011N06N and IRFS7537TRLPBF, IPTC012N06NM5 uniquely combines ultra-low R_DS(on), top-side cooling, and 175 °C qualification-making it the only option for space-constrained, high-temperature motor drives where thermal path flexibility and long-term reliability are non-negotiable.

Availability

IPTC012N06NM5 is available at Aetrix Electronics and suitable for electric power steering modules, industrial BLDC motor drives, and battery energy storage systems requiring stable component supply across multi-year production cycles.

Supply support for IPTC012N06NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-power-density motor control and battery-system applications demanding low conduction loss, robust avalanche capability, and flexible thermal integration.

FAQ

What is the maximum recommended gate resistor value for IPTC012N06NM5 in a 100 kHz motor inverter?

The datasheet specifies t_d(on) = 16 ns and t_r = 27 ns with R_G,ext = 1.8 Ω. For 100 kHz operation, gate resistor should be ≤2.2 Ω to maintain <100 ns total switching time and limit switching loss to <15% of total loss. Higher values increase turn-on delay and risk shoot-through in half-bridge configurations.

Can IPTC012N06NM5 be used in synchronous rectification mode with V_GS driven below 4.5 V?

Yes-the gate plateau voltage is 4.5 V, and R_DS(on) remains ≤1.45 mΩ at V_GS = 6 V (ID = 50 A). However, for full 311 A rating, V_GS ≥10 V is required. At 4.5 V, R_DS(on) rises to ~2.0 mΩ, increasing conduction loss by ~65% versus 10 V drive.

Is the PG-HDSOP-16 package RoHS and halogen-free compliant?

Yes-per datasheet Rev. 2.0, the device features Pb-free lead plating compliant with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21, with chlorine and bromine content <900 ppm each and total halogens <1500 ppm.

How is the 420 mJ E_AS rating validated, and does it apply to repetitive stress?

E_AS = 420 mJ is measured per JEDEC JESD24-11 using single-pulse inductive test (I_D = 100 A, R_GS = 25 Ω). It is a one-time ruggedness rating-not rated for repetitive avalanche. Repetitive operation requires snubber design or clamping to keep V_DS within 60 V during turn-off.