Infineon Technologies IPTC026N12NM6ATMA1

Overview

IPTC026N12NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching in industrial DC-DC converters and motor drives, featuring 120 V V_DS, 2.6 mΩ max R_DS(on) at 10 V V_GS, 222 A continuous drain current, 70 nC total gate charge, and top-side cooling capability via PG-HDSOP-16 package with exposed drain tab (Pins 9–16 + Tab).

For engineers reviewing the IPTC026N12NM6ATMA1 datasheet, IPTC026N12NM6ATMA1 pinout, IPTC026N12NM6ATMA1 application, or IPTC026N12NM6ATMA1 equivalent, key selection criteria include its low Q_g × R_DS(on) figure-of-merit (182 Ω·nC), 245 nC reverse recovery charge at 1000 A/µs, 175 °C maximum junction temperature, and thermal characterization parameters Ψ_JL = 3 °C/W (drain leads) and 9 °C/W (source leads).

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (2.6–3.6 V) enables robust turn-on with standard 10 V gate drivers, and its low Crss (27–47 pF) minimizes Miller-induced shoot-through risk in half-bridge configurations.

The PG-HDSOP-16 package integrates a thermally enhanced top-side cooling interface and dual-source/drain lead sets: Pins 1–7 serve as source terminals with Ψ_JL = 9 °C/W, while Pins 9–16 plus the exposed tab form the low-thermal-resistance drain path (R_thJC = 0.54 °C/W, Ψ_JL = 3 °C/W), enabling efficient heat extraction from both PCB and heatsink sides.

Key Specifications

Pinout & Package

Package: PG-HDSOP-16 - Thermally optimized 16-pin surface-mount package with exposed drain tab on top side for direct heatsink mounting and bottom-side source connections for PCB copper-area thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 120 V MOSFET applications.

Compared with IXFH210N15X3 and STW90N120K6, IPTC026N12NM6ATMA1 delivers superior power density via PG-HDSOP-16 top-side cooling and lowest R_DS(on) × Q_g among 120 V devices, making it optimal for space-constrained, high-frequency industrial power stages where thermal management flexibility is critical.

Availability

IPTC026N12NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and renewable energy battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPTC026N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 6 family-engineered specifically for high-efficiency, high-frequency power conversion in industrial and server applications where low R_DS(on), fast switching, and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current for IPTC026N12NM6ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 157 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes proper thermal management using the top-side drain tab and PCB copper area, and de-rates linearly to 143 A at 100 °C with V_GS = 8 V due to increased R_DS(on).

Does IPTC026N12NM6ATMA1 support gate driving with 8 V logic-level signals?

Yes-the gate threshold voltage ranges from 2.6 V to 3.6 V, and R_DS(on) remains 3.13 mΩ max at V_GS = 8 V and I_D = 58 A (Table 4). However, full 222 A rating requires V_GS ≥ 10 V; operation at 8 V is validated for lower-current, thermally constrained applications.

How is thermal resistance measured between junction and drain leads in PG-HDSOP-16?

Junction-to-drain-lead thermal characterization is defined by Ψ_JL = 3 °C/W (per JESD51-12), measured between the silicon junction and Pins 9–16 + Tab under natural convection. This parameter enables accurate real-time junction temperature estimation by measuring the temperature of the drain leads in the actual application environment.

Can IPTC026N12NM6ATMA1 be used in synchronous rectification mode with body diode conduction?

Yes-the integrated body diode has V_SD = 0.88 V typical at 115 A and T_j = 25 °C (Table 7), and reverse recovery charge Q_rr is characterized at 245 nC under high di/dt (1000 A/µs). These values make it suitable for synchronous rectifier roles in LLC and phase-shifted full-bridge topologies where controlled body-diode conduction occurs during dead time.